InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitlinedirect sensing scheme

A 1.8-V-only 32-Mb NOR flash EEPROM has been developed based on the 0.25-μm triple-well double-metal CMOS process. A channel-erasing scheme has been implemented to realize a cell size of 0.49 μm² , the smallest yet reported for 0.25-μm CMOS technology. A block decoder circuit with a novel erase-reset sequence has been designed for the channel-erasing operation. A bitline direct sensing scheme and a wordline boosted voltage pooling method have been developed to obtain high-speed reading operation at low voltage. An access time of 90 ns at 1.8 V has been realized     

Theoretical and measured characteristics of metal(CoSi2)-insulator(CaF2) resonant tunnelingtransistors and the influence of parasitic elements

We report on the theoretical and measured characteristics of triple-barrier metal (CoSi₂)-insulator(CaF₂) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics. First, we analyze theoretical characteristics of an M-I RTT, and then show fabrication process and current-voltage (I-V) characteristics obtained at 77 K, in which several degradations are observed: large resonance voltage, low peak-to-valley (P-V) ratios at negative differential resistance (NDR), and reverse base current. Analysis, taking several parasitic elements (e.g., base resistance, substrate resistance and leakage currents connected to the intrinsic transistor) into account, explains observed characteristics well. Finally, we show the first transistor action with large P-V ratios at 300 K, which is achieved by reducing collector-emitter leakage currents     

A global stability analysis for symmetric self-electrooptic effectdevice systems using a potential function method

This paper proposes a novel analytical method for use in symmetric self-electrooptic effect device (S-SEED) systems, called the potential function method, based on a global stability analysis of differential equations for photocurrent in S-SEED circuits. The method provides intuitive views for analyzing the stability of the system, and is useful for tracking the temporal dynamics of S-SEED nonlinear electrical circuits. This paper also describes electro-absorption characteristics of SEED's, especially those based on Wannier Stark localization (WSL). In this type of SEED, the photocurrent versus reverse bias voltage characteristics has multiple peaks and multiple negative differential resistance regions, resulting from Stark ladder transitions due to thin barrier superlattices. Various types of stabilities, including the metastable state, as well as the temporal switching dynamics of WSL-S-SEEDs, can be explained clearly by using this potential function method     

Study on critical dimension of printable phase defects using an EUV microscope

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.     

Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

We have developed a low-leakage and highly reliable 1.5-nm SiON gate-dielectric by using radical oxygen and nitrogen. In this development, we introduce a new method for determining an ultrathin SiON gate-dielectric thickness based on the threshold voltage dependence on the substrate bias in MOSFETs. It was found that oxidation using radical oxygen followed by nitridation using radical nitrogen provides the 1.5-nm (oxide equivalent thickness) SiON, in which leakage current is two orders of magnitude less than that of 1.5-nm SiO/sub 2/ without degrading device performance in NMOSFETs. The 1.5-nm (oxide equivalent thickness) SiON was also found to be ten times more reliable than 1.5-nm SiO/sub 2/.     

A mechanical sensorless control system for salient-pole brushlessDC motor with autocalibration of estimated position angles

In this paper, a mechanical sensorless control system is reported for salient-pole brushless DC motor drives. Here, two new methods are proposed for obtaining the position angle, the accuracy of which affects the operation of the switching devices of the inverter that drives the motor. First, the method for estimating the position angle is proposed. Secondly, the correcting method for reducing the errors involved in the estimation of position angle is given. The experimental results show that the estimated position angles are calibrated automatically, and then the proposed sensorless control system can control the speed and the position angles of the motor precisely     

Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits

Two types of nanophotonic technologies—two-dimensional photonic crystal (2D PC) slab waveguides (WGs) and quantum dots (QDs)—were developed for key photonic device structures in the future. For an ultrafast digital photonic network, an ultrasmall and ultrafast symmetrical Mach–Zehnder (SMZ)-type all-optical switch (PC-SMZ) and an optical flip–flop device (PC-FF) have been developed. To realize these devices, one method is to develop a selective-area molecular beam epitaxial growth QD technique by employing a metal mask method. Another method is to establish a new design method, i.e., topology optimization of the 2DPC WG with a wide and flat bandwidth, high transmittance, and low reflectivity. We also fabricated an optical microcavity in a photonic crystal slab embedded with GaAs QDs by droplet epitaxy. The Purcell effect on the exciton emission of GaAs QDs was confirmed by microphotoluminescence and lifetime measurements.     

Transmission performance of chirp-controlled signal by usingsemiconductor optical amplifier

We examine the fiber transmission performance of the optical signal whose chirp is controlled by utilizing phase modulation in semiconductor optical amplifier (SOA) with both simulations and experiments. This chirp control technique converts a positive chirp created by electroabsorption (EA) modulator into negative chirp, which reduces the waveform degradation due to the chromatic dispersion in transmission over standard single-mode fiber (SMF). It also provides an optical gain that is sufficient to compensate the insertion loss of the EA modulator. We investigate how the chirp control is affected by the input power to the SOA and the carrier lifetime of the SOA. As the SOA input power increases, the negative chirp becomes large, while the waveform is largely distorted due to gain saturation. However, the waveform distortion at high SOA input powers can be shaped by using a frequency discriminator. The acceleration of the carrier lifetime also reduces the waveform distortion due to gain saturation. We demonstrate that the chirp control technique is effective even for a high bit rate optical signal up to 10 Gb/s, when the carrier lifetime is expedited by optical pumping