Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

参数化图形库技术

本文论述了参数化图形库的实现原理，建立了以尺寸叠加算法为基础的参数化图形库开发工具，利用这种开发工具建立的图形数据可以由数据库管理，方便有效。     

CA／PAN中空纤维血浆分离膜的结构与性能

本研究以CA及PAN的共混溶液,通过干-湿法纺丝制取中空纤维,利用共混高聚物各组分在凝固剂中相分离速度的差异,形成具有稳定结构的中空纤维孔膜,该膜用于分离血液中的血浆成分具有良好效果。讨论了成型条件及添加剂等对膜结构、性能的影响,用SEM及图相分析仪、MAP压汞仪及DSC等分析手段,对膜的微孔结构、形态、孔尺寸及中空纤维膜的血浆通量和水通量等进行了系统的考查。     

银狐皮毛被及皮板组织构造的研究

用光学显微镜和扫描电镜观察了国产人工饲养银狐的毛被和皮板组织构造 ,测定了毛的长度、细度、密度、毛的鳞片高度和皮板厚度。提供了毛和皮板组织学图片 15幅。     

气泡在粘弹性液体中溶解的研究进展

在发泡塑料的制造过程中，均相气体－聚合物体系的形成直接影响了制品的物理机械性能，因此了解气泡在粘弹性液体中的溶解机理成为必然。本文讲述了气泡在流体中塌陷行为的研究进展。对Rayleigh对低粘度牛顿流体，Foqer和Goddand在无线量线性Maxwell模型的粘弹性体，Tanasawa和Tang用oldroyd三常数粘弹模型等科学家的研究行为做了概述，总结出影响此过程的复杂的影响因素，并指出进一步的研究方向。     

Interfacial segregation of Ti in the brazing of diamond grits onto a steel substrate using a Cu-Sn-Ti brazing alloy

Diamond grits were brazed onto a steel substrate using a prealloyed Cu-10Sn-15Ti (wt pct) brazing alloy at 925 °C and 1050 °C. Due to the relatively high concentration of Ti in the brazing alloy, the braze matrix exhibited a composite structure, composed of β-(Cu,Sn), a Cu-based solid solution, and various intermetallic compounds with different morphologies. The reaction of Ti with diamond yielded a continuous TiC layer on the surfaces of the diamond grits. On top of the TiC growth front, an intermetallic compound, composed of Sn and Ti, nucleated and grew into a randomly interwoven fine lacey structure. An interfacial structure developed as the interwoven fine lacey phase was semicoherently bonded to the TiC layer, with the Cu-based braze matrix filling its interstices. The thickness of such a composite layer was increased linearly with the square root of isothermal holding time at 925 °C, complying with the law of a diffusion-controlled process. However, at 1050 °C, the segregation behavior of Ti and Sn to the interfaces between the TiC layer and the braze matrix diminished, due to the increased solubility of Ti in the Cu-based liquid phase. The enhanced dissolution of Ti in the Cu-based liquid phase at 1050 °C also caused the precipitation of rod-like CuTi with an average diameter of about 0.2 μm during cooling. SnTi₃ was the predominant intermetallic compound and existed in three different forms in the braze matrix. It existed as interconnected grains of large size which either floated to the surface of the braze matrix or grew into faceted grains. It also exhibited a nail-like structure with a mean diameter of about 1 μm for the rod section and a lamellar structure arising from a eutectic reaction during cooling.     

Internet中文信息搜索引擎评析

介绍搜索引擎的分类、对比和查询技巧。     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。