Liquid source chemical vapor deposition of high-dielectric-constant (Ba,Sr)TiO3 films

High-dielectric-constant (Ba, Sr)TiO₃ [BST] films were deposited by the liquid source chemical vapor deposition (CVD) method. The system consisted of a single-wafer, low-pressure thermal CVD reactor, a vaporizer for liquid source materials, and a shower-type gas nozzle head, giving stable BST film deposition on a 6-in. diam. substrate with uniform thickness and uniform chemical composition ratio. The source materials employed were Ba(DPM)₂, Sr(DPM)₂, and TiO(DPM)₂ dissolved in tetrahydrofuran (THF), resulting in conformal step coverage of BST films at lowered substrate temperatures, where DPM denotes dipivaloylmethanate. Moreover, the two-step deposition technique was developed to restart protrusions formed on BST film surfaces at low temperatures, where the BST films consisted of a buffer layer and a main layer; the buffer layer was a layer about 60 Å thick of CVD-BST film annealed in N₂. Thus, the two-step CVD deposition of BST films on Pt and Ru electrodes achieved an equivalent SiO₂ thickness of t_eq ∼ 0.5 nm, a leakage current of J_L ∼ 1.0 × 10⁻⁸ A/cm² (at +1.1 V), and a dielectric loss of tan δ ∼ 0.01 at a total film thickness of 250 Å, along with conformal coverage of 80% for a trench with an aspect ratio of 0.65. Then, for BST films deposited on patterned electrodes 0.24 μm wide, 0.60 μm deep, and 0.15 μm high (each spaced by 0.14 μm), the capacitance was demonstrated to be increased without significant deterioration of the leakage current: the capacitance was increased in comparison with that for films on flat electrodes, by a factor corresponding to the increase in surface area due to sidewalls of storage-node-like pattern features. This capacitance increase reflects the most characteristic advantage of CVD, an excellent step coverage on microscopic pattern features. These electrical properties satisfy the specifications for capacitors for Gb-scale dynamic random access memories (DRAMs), giving a storage capacitance of more than 25 fF/cell for a stacked capacitor having a storage node 0.2 to 0.3 μm high. © 1998 Scripta Technica, Electr Eng Jpn, 125(1): 47–54, 1998     

A new human breast cancer cell line, KPL-1 secretes tumour-associated antigens and grows rapidly in female athymic nude mice

We recently established a new human breast cell line, designated KPL-1, which was derived from the malignant effusion of a patient with breast cancer. This cell line is highly tumorigenic and grows rapidly in female nude mice. Cytogenetic analysis indicated its human origin and revealed a hypertriploid modal number of chromosomes. Electron microscopic examination suggested that the KPL-1 cells are of epithelial origin. Immunohistochemical studies revealed that the cells express cytokeratin, carcinoembryonic antigen and CA 15-3. They also possess a large number of oestrogen receptors but not progesterone receptors. Interestingly, KPL-1 cells seem to grow oestrogen independently in vitro. No amplification of c-erbB-2, c-myc, H-ras and N-ras genes was detected. KPL-1 cells secrete a large amount of tissue polypeptide antigen (TPA). Although the secretion of CA 15-3 seemed to be constant throughout all cell growth phases, TPA secretion increased during the exponential growth phase and decreased during the plateau phase. Serum TPA levels significantly correlated with the volume of KPL-1 tumours transplanted into nude mice. These data suggest that this KPL-1 cell line may be useful for studying oestrogen-independent growth and the kinetics of tumour-associated antigens in vivo as well as in vitro.     

Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

We systematically investigated intrinsic and extrinsic thermal reactions at TiN/HfSiON gate stacks. The formation of an ultrathin TiO₂ interlayer was found to be an intrinsic reaction at the metal/insulator interface, but growth of SiO₂ underlayers between HfSiON and Si substrates, which determines the electrical thickness of metal-oxide-semiconductor (MOS) devices, depends on the structure and deposition method of the gate electrodes. Physical vapor deposition (PVD) grown TiN electrodes covered with W overlayers exhibited excellent thermal stability at up to 1000 °C. Formation of ultrathin TiO₂ interlayers reduced gate leakage current (I_g), and growth of the oxide underlayer was suppressed by less than a few angstroms even for 1000 °C annealing. In contrast, we found that halogen impurities within CVD-grown metal electrodes enhance interface SiO₂ growth, resulting in deterioration of equivalent oxide thickness (EOT) versus I_g characteristics of the gate stacks.     

Electrically tunable spin injector free from the impedance mismatch problem

Injection of spin currents into solids is crucial for exploring spin physics and spintronics. There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors and organic materials, which uses tunnel barriers to circumvent the impedance mismatch problem; the impedance mismatch between ferromagnetic metals and high-resistivity materials drastically limits the spin-injection efficiency. However, because of this problem, there is no route for spin injection into these materials through low-resistivity interfaces, that is, Ohmic contacts, even though this promises an easy and versatile pathway for spin injection without the need for growing high-quality tunnel barriers. Here we show experimental evidence that spin pumping enables spin injection free from this condition; room-temperature spin injection into GaAs from Ni(81)Fe(19) through an Ohmic contact is demonstrated through dynamical spin exchange. Furthermore, we demonstrate that this exchange can be controlled electrically by applying a bias voltage across a Ni(81)Fe(19)/GaAs interface, enabling electric tuning of the spin-pumping efficiency.     

Acid-treated high-amylose corn starch suppresses high-fat diet-induced steatosis

Resistant starch (RS) has been reported to improve steatosis as well as obesity. Type 4 resistant starch (RS4), a chemically modified starch, is particularly hard to digest and suggesting higher efficacy. However, because the effects of RS4 on steatosis are not yet fully understood, the effects of RS4 on steatosis were examined using a murine high-fat diet model. Seven-week-old male mice were divided into three groups and fed a normal diet, a high-fat diet (HFD), or a high-fat diet with added RS (HFD + RS). Amylofiber SH^® produced from acid-treated corn starch was used as the dietary RS. At 22 weeks old, hepatic steatosis and short chain fatty acid (SCFA) content and gut microbiota in cecum stool samples were analyzed. The ratio of body weight to 7 weeks was significantly suppressed in the HFD + RS group compared to the HFD group (132.2 ± 1.4% vs. 167.2 ± 3.9%, p = 0.0076). Macroscopic and microscopic steatosis was also suppressed in the HFD + RS group. Analysis of cecum stool samples revealed elevated SCFA levels in the HFD + RS group compared with the HFD group. Metagenome analysis revealed that Bifidobacterium (17.9 ± 1.9% vs. 3.6 ± 0.7%, p = 0.0019) and Lactobacillus (14.8 ± 3.4% vs. 0.72 ± 0.23%, p = 0.0045), which degrade RS to SCFA, were more prevalent in the HFD + RS group than the HFD group. In conclusion, RS4 suppressed steatosis, and increased Bifidobacterium and Lactobacillus, and SCFAs. RS4 may prevent steatosis by modulating the intestinal environment.     

Postsurgical oral administration of uracil and tegafur inhibits progression of micrometastasis of human breast cancer cells in nude mice

We recently established a metastasis model in nude mice using the MKL-4 cell line, a contransfectant of the MCF-7 human breast cancer cell line with fgf-4 and lacZ in which micrometastases in several organs can be quantitatively observed. First, to develop a new postsurgical metastasis model, we investigated the timing of occurrence of micrometastasis and the influence of tumor removal on the progression of micrometastasis in this model. Micrometastases into lymph nodes and lungs were detected 3 weeks after the cell injections. Tumor removal 3 weeks after the injections significantly enhanced the progression of micrometastasis into lymph nodes and bone. Second, to study the effect of a mixed compound, UFT (a molar ratio of uracil:tegafur of 4:1), which has been widely used in the postsurgical adjuvant setting in Japan, 15 or 20 mg/kg UFT were administered p.o. for 4 weeks to tumor-bearing mice or to mice in which transplanted tumors were resected 3 weeks after the injections. Either dose of UFT significantly inhibited the tumor growth as well as the progression of micrometastasis into lymph nodes, lungs, liver, and brain. In addition, enhanced progression of micrometastasis in all explored organs by the tumor removal was significantly inhibited by the administration of either dose of UFT. In conclusion, this new postsurgical metastasis model may be useful for evaluating the efficacy of agents used in the postoperative adjuvant setting. UFT may be an effective drug for inhibiting the progression of micrometastasis after surgery.     

THE EFFECT OF BIAXIAL STRESS STATE AND CHANGES OF STATE ON FATIGUE CRACK GROWTH BEHAVIOUR

Abstract— The effect of biaxial loading on the fatigue crack growth properties for a stainless steel has been examined. From comprehensive experiments, a significant biaxial stress effect on crack growth was found when the stress level was high and the crack was short. In this paper, the critical region where the effect of biaxial stress appears was clarified quantitatively. Moreover, the effect of changing the biaxial stress condition on fatigue crack growth behaviour was investigated. Significant acceleration of crack growth was observed just after the uniaxial or equibiaxial stress condition was changed to the shear stress condition. This acceleration seems to be due to the change of plastic zone shape at the crack tip.     

Boundary element analysis of dissimilar materials and interface crack

The highly-accurate BEM elastostatic program, which is especially useful for the analysis of dissimilar materials and interface cracks, is introduced in brief. By using this program, we can deal with the elastostatic poblems of isotropic or orthotropic dissimilar materials and also the bonded residual stress due to the mismatch of material constants. This paper shows some applications of the BEM program to the analysis of dissimilar materials and interface cracks considering the residual stress quantitatively, and also shows the method to evaluate the strength of dissimilar materials based on the interfacial fracture mechanics. Some experimental results and the evaluation on the strength of dissimilar materials are also presented.