An accurate and practical buffer allocation model for the buffer cache based on marginal gains

A new dynamic buffer allocation strategy based on the notion of marginal gains is presented for the buffer cache that is used by the operating system to store frequently accessed disk blocks in main memory, and the performance of the proposed strategy is compared with those of previous allocation strategies. In the proposed strategy, marginal gain values are predicted by exploiting functions that approximate the expected number of buffer hits per unit time. Experimental results from both trace-driven simulation and an actual implementation in the FreeBSD operating system show that the proposed strategy accurately predicts the marginal gain values for various workloads resulting in significantly improved buffer hit ratios.     

Extensions of LDA by PCA mixture model and class-wise features

Linear discriminant analysis (LDA) is a data discrimination technique that seeks transformation to maximize the ratio of the between-class scatter and the within-class scatter. While it has been successfully applied to several applications, it has two limitations, both concerning the underfitting problem. First, it fails to discriminate data with complex distributions since all data in each class are assumed to be distributed in the Gaussian manner. Second, it can lose class-wise information, since it produces only one transformation over the entire range of classes. We propose three extensions of LDA to overcome the above problems. The first extension overcomes the first problem by modelling the within-class scatter using a PCA mixture model that can represent more complex distribution. The second extension overcomes the second problem by taking different transformation for each class in order to provide class-wise features. The third extension combines these two modifications by representing each class in terms of the PCA mixture model and taking different transformation for each mixture component. It is shown that all our proposed extensions of LDA outperform LDA concerning classification errors for synthetic data classification, hand-written digit recognition, and alphabet recognition.     

Characterization of Ceramic Composite-Membranes Prepared by ORMOSIL Coating Sol

Sol-gel methods offer many advantages over conventional slip-casting, including the ability to produce ceramic membranes. They are purer, more homogeneous, more reactive and contain a wider variety of compositions. We produced ormosil sol using sol-gel process under different molecular weight of polymer species [polyethylene glycol (PEG) ] in total system [Tetraethyl ortho silicate(TEOS)-polyethylene glycol (PEG)]. The properties of as-prepared ormosil sol such as,viscosity, gelation time were characterized. Also, the ceramic membrane was prepared by dip-coating with synthetic sol and its micro-structure was observed by scanning electron microscopy. The permeability and rejection efficiency of membrane for oil/water emulsion were evaluated as cross-flow apparatus. The ormosil sol coated Membrane is easily formed by steric effect of polymer and it improves flux efficiency because infiltration into porous support decreased. Its flux efficiency is elevated about 200(1/m2·h) compared with colloidal sol coated membrane at point of five minutes from starting test.     

Effects of ternary additions on the thermoelastic martensitic transformation of NiAl

Nickel-rich β-NiAl alloys, which are potential materials for high-temperature shape-memory alloys, show a thermoelastic martensitic transformation, which produces their shape memory effect. However, the transformation to Ni₅Al₃ phase during heating of NiAl martensite can interrupt the reversible martensitic transformation; consequently, the shape memory effect in NiAl martensite might not appear after heating. The phase transformation process in binary Ni-(34 to 37)Al martensite was investigated by differential thermal analysis (DTA) method, and we found that the condition of reversible martensitic transformation was not the β → Ni₅Al₃ transformation, but rather the M → Ni₅Al₃ transformation occurring at 250 °C to 300 °C. Therefore, the transformation temperature of M → Ni₅Al₃ determined the highest operating temperature for the shape memory effect. For verifying the critical temperature, the phase transformation process was investigated for eight ternary Ni-33Al-X alloys (X=Cu, Co, Fe, Mn, Cr, Ti, Si, and Nb). Only Ti, Si, and Nb additions were found to be effective in dropping the M _s temperature, and they facilitated the shape memory effect in Ni-33Al-X alloys. In particular, the addition of Si and Nb raised the transformation temperature of M → Ni₅Al₃, a potentially beneficial effect for shape memory at higher temperatures. This article is based on a presentation made in the symposium entitled “Fundamentals of Structural Intermetallics,” presented at the 2002 TMS Annual Meeting, February 21–27, 2002, in Seattle, Washington, under the auspices of the ASM and TMS Joint Committee on Mechanical Behavior of Materials.     

Theory of Switched RF Resonators

Transient characteristics of switched resonators have been studied. The resonators exhibit controllable impedance and energy storage behaviors during an alternating charging and discharging process. It is discovered that these unique characteristics of switched resonators can lead to novel RF envelope signal processing functions. The paper discusses the basic theory of switched resonators and the designing methodology of relevant RF signal processing applications. Two applications are presented as examples. The first example is a variable, reflective attenuator which uses the controllable impedance of the switched resonators to achieve different attenuation/reflection levels. In the second example, a simple, compact and efficient RF pulse compression technique based on the switched resonator concept is introduced. It utilizes the charging/discharging characteristics of the circuit resonator by varying the resonator's Q-factor. The approach compresses the duration of the modulated pulse without changing the phase characteristics of the RF carrier. The pulse compression technique can also be implemented with other type of resonators including distributed resonators, as demonstrated through the experiments     

Effects of reducing and oxidizing atmospheres on the PTCR characteristics of porous n-BaTiO3 ceramics by adding polyethylene glycol

Donor doped BaTiO₃ (n-BaTiO₃) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO₃ ceramics were investigated. The PTCR characteristics of the porous n-BaTiO₃ ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO₃ ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO₃ ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries.     

掺杂铁电纳米粉的液晶的电光特性

铁电纳米粒子悬浮在向列相液晶母体中，增强介电各向异性，而且对施加的电场信号敏感。本文也展示了纳米粒子对所述复合材料可实现的总的相变的作用。这种方法也许可应用于设计新型显示材料。     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.