A redundant multivalued logic for a 10-Gb/s CMOS demultiplexer IC

A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

制备条件对硅基介孔分子筛孔结构的影响

采用溶剂热法制备了硅基介孔分子筛材料,较系统地考察了晶化温度、晶化时间及焙烧温度等因素对其结构的影响,并利用N2吸附手段进行了表征.结果表明,晶化温度和晶化时间能明显影响硅基介孔材料的结构,而过高的焙烧温度易导致介孔结构的塌陷.     

长庆气田天然气处理工艺研究

根据长庆上、下古气田气藏的不同地质特征,在长庆气田榆林气区采用了天然气低温分离工艺。介绍了国内外天然气处理工艺的发展历程和目前的应用情况。论述了天然气低温分离工艺的技术特点、工作原理、技术流程以及在生产中确定和控制低温分离温度的方法,同时还介绍了新创造的小压差节流制冷工艺的原理和应用情况。     

番禺30-1砂岩强水驱气藏储层非均质性研究

针对垂向非均质性严重且边底水能量强的番禺30-1气田面临的潜在开发问题，通过岩心分析及测井二次解释，对其夹层特征及储层非均质性等进行了研究，划分出19个流动单元并定量描述了各流动单元的特征参数，建立了该气田的精细地质模型。综合评价表明，新建的地质模型具有较高的精度，为该气藏合理开发提供了坚实的地质基础。     

涡轮搅拌桨反应器混合过程的数值计算

利用CFD方法计算单层涡轮反应器搅拌槽内流体混合过程的速度场和浓度场,研究物料在搅拌槽内的混合过程,以及不同监测点对混合时间的影响。结果表明,搅拌槽内物料的混合主要受槽内流体的流动形式所影响;混合时间的长短与监测点位置有关;在搅拌桨的桨叶附近进行监测所得到的混合时间较短,在液面附近进行监测所得的混合时间较长。在实际生产和试验中,应注意对监测点位置的选取。     

Reducing CIC filter complexity

This paper provides several tricks to reduce the complexity and enhance the usefulness of cascaded integrator-comb (CIC) filters. The first trick shows a way to reduce the number of adders and delay elements in a multi-stage CIC interpolation filter. The result is a multiplierless scheme that performs high-order linear interpolation using CIC filters. The second trick shows a way to eliminate the integrators from CIC decimation filters. The benefit is the elimination of unpleasant data word growth problems.     

Degree-of-polarization and eye-closure penalty associated with optical signals with orthogonal polarizations

We perform a systematic measurement of the degree-of-polarization (DOP) and eye-closure penalty for optical signals with orthogonal polarizations. We find that the symmetry of DOP is maintained for the orthogonal polarizations under both first and higher order polarization-mode dispersion (PMD), whereas the symmetry of eye-closure penalty is broken under second-order PMD. An orthogonal polarization pair can have large disparity of eye-closure penalty despite an identical DOP. We also demonstrate a novel approach to estimate the maximum eye-closure penalty asymmetry with three orthogonal polarizations on the Poincare/spl acute/ sphere.