采用信息融合技术的IR／MMW复合导引头的目标跟踪

从误差测量环节入手，基于IR／MMW双模结构，采用信息融合处理技术提高其估计跟踪精度，最终达到降低制导误差，提高武器性能的目的，仿真结果验证了该方法的有效性。     

高温稀土永磁Sm2(Co,Cu,Fe,Zr)17 的制备和性能

制备了高温稀土永磁材料Sm(Coba1Fe0．26Cu0．05Zr0．026)7．0，研究了磁性能与工艺条件的关系．结果表明：提高烧结温度可使材料的Br和(BH)max增大，但是使Hci降低；适当提高真空预烧温度，可使材料在较低烧结温度下致密化，具有较高的Hci和(BH)max和温度稳定性．真空预烧温度过高使性能的急剧降低，其主要原因是Sm的析出．在最佳工艺条件下材料的磁性能参数分别为：Br1．08T3Hci2286kA／m，Hcb932kA／m，(BH)max220．8kJ／m^3；β20-200℃为-0．19％／℃．     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

氧化锌颗粒膜电阻响应-恢复特性研究

测试了氧化锌颗粒膜电阻响应-恢复特性，讨论了颗粒形态，加热电压、环境气氛、气氛浓度和注入方式等因素对电阻响应-恢复特性的影响。结果表明，随着加热电压的升高，电阻响应-恢复的速度和程度明显加大；断续注入时颗粒膜电阻值的响应随着浓度的增加逐步减弱．     

基于VHDL实现单精度浮点数的加／减法运算

研究了单精度浮点数加／减法的结构及其设计方法，并在Aldec公司的Active—HDL软件环境下，采用VHDL语言进行设计，并进行了仿真验证，计算精度可以达到10^-7。     

尼龙6/改性双马来酰亚胺共混物的制备

将尼龙6与改性双马来酰亚胺熔融共混形成合金以提高其热稳定性能.用转矩流变仪考察了尼龙6/改性双马来酰亚胺共混体系熔融反应过程中的流变行为,用TG-DSC测试了共混物的热性能.结果表明:熔融共混时,2组分间的化学反应进行很快,改性双马来酰亚胺用量增加,共混物的熔融粘度增大,温度或转速升高,平衡转矩降低;改性双马来酰亚胺可明显改善尼龙6的高温热稳定性能,当尼龙6与改性双马来酰亚胺的质量比为20/1时,共混物在236-340℃温度范围内有很好的热稳定性.     

Numerical Simulation of Deforming Manufacture Process for Automobile Bevel Gear Blank

1 Introduction Rear axle bevel gearis a vital kind of annular accessory with high precision and hugeload availablefeatures ,andit is widely used as the differential drive in automobiles and tractor .In China ,the traditional manufactureapproach of producing the rear axle bevel gear blankis die forging,which not only requires a highinvestment ofproduct equipments , but also involves a low material utilization and great noise .In order to overcome thesedrawbacks , manyresearchers have done a gre…     

电流控制LPE生长In_（1－x）Ga_xAs_yP_（1－Y）

用电流控制液相外延（ＣＣＬＰＥ）方法首次在（１００）ＩｎＰ衬底上成功地生长出Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ（０．３０＜ｘ＜０．４７，０．７０＜ｙ＜０．９６）外延层，并对外延层特性进行了详细研究，提出在ＩｎＰ衬底上生长电外延层的机理，推导出生长动力学的理论模型，该模型与上述实验结果十分吻合。