Various Approaches in Kinetics Modeling of Real Feedstock Hydrodesulfurization

This brief review discusses various important approaches in kinetics modeling of real feedstock hydrodesulfurization. These include analytical aspects of dealing with complicated real feedstock, structural approaches, linear-free energy relationships, and the continuum theory in hydrodesulfurization modeling.     

A study of the electrical conductivity processes in amorphous semiconductors using the computer simulation method I. One-dimensional case

In this paper we present a computational model of electrical conductivity processes via variable range hopping of electrons between localized states (‘sites’) in quasi one-dimensional disordered systems. For two, slightly different models, the temperature dependence of the conductivity of parallel connected systems of filaments and of quasi-infinite, single filaments are discussed and compared with theoretical and experimental results.     

Inference control in statistical databases with incomplete information

The paper deals with the problem of inference control in statistical databases. We consider the case when database contains incomplete information and we study consequences of that fact. We propose the interpretation of a query language as ranges to protect confidential information and give a method for protecting statistical databases with incomplete information from a disclosure.     

A new method of determination of the permeability of vapors of volatile liquid substances through polymer membranes

A new apparatus for the determination of vapor permeability of volatile liquid substances through polymer membranes has been described. The permeability of the vapor is calculated from the measurements of the depression rate of the liquid meniscus in a calibrated capillary tube. The conditions of the measurements by means of the described method are very close to those of the average and practical application of foils. The method is characterized by a simple design of the apparatus, easy handling, and simplicity of the determinations, so it may constitute the basis of vapor permeability determination standards. The results obtained by means of the described method were compared with those derived from the partition cell method.     

Study of a plate modelling a dock gate

Computer aided finite element analysis has been applied to evaluate the structural behavior of a solid plate representing statically certain box-type construction of a dry dock gate. Possible comparison of particular results following from different procedures, valid for constant plate stiffness and rigid supports, has been performed and the distribution of reactions for variable plate stiffness, within two different numerical accuracies, has been studied. For practical requirements the nonlinear elastic flexibility of dock gate packing has been taken into account and an adequate numerical step-by-step approach, satisfying the considered material characteristics, developed. For last case the deflections, reactions, and internal forces have been examined in detail and a comparison with those for rigid supports presented.     

Cascadable Current-Mode Biquads

New procedures are presented that yield cascadable, opamp based current-mode biquads from voltage-mode biquads without the use of voltage-mode to current-mode transformations. The opamps in the resulting current-mode circuits can be replaced by current-mode devices, such as current conveyors, producing circuits that are fully current-mode. The procedures are applied to several multi-opamp voltage-mode circuits to achieve current-mode lowpass, highpass, bandpass, notch, and allpass filters. The procedures are also applied to a single opamp circuit. Experimental results are given.     

A study of the electrical conductivity processes in amorphous semiconductors using the computer simulation method III. Three-dimensional case

A numerical model for the hopping conductivity in 3-D disordered systems is presented. The relation between variable-range hopping conductivity and temperature for the low-temperature range is found. The advantage of the proposed model is that the size of the system investigated is not limited by the computer memory.     

Structural and electrical properties of Ti-Al thin films

We have studied thin films of Ti-Al for use as resistance elements. It was found that Ti-40 wt.% Al thin films with a resistivity of 10 ω/□ possess stable characteristics. We have also studied the structure of Ti-Al thin films. Analysis of electron and X-ray diffraction patterns showed that Ti-40 wt.% Al films contained a fine-grained disordered intermetallic face-centred cubic TiAl phase whereas bulk TiAl had a tetragonal CuAu-type structure.