6M32(51)氮氢气压缩机系统的技术改造

1 机组简介 6M32(51)-190/320-BX型氮氢气压缩机的基础件采用德国博尔格公司的专有技术,具体参数如下: 压缩介质:氮氢气,压缩级数:6级;转速:375rpm;行程:320mm,轴功率:2920kW,容积流量:190m~3/min;气量调节:回路调节,冷却填料润滑油:1.95 kg/h;重量:主机69.45t,     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Tests of univariate and bivariate stochastic ageing

Concepts of ageing describe how a population of units or systems improves or deteriorates with age. Many classes of life distributions are categorized and defined in the literature according to their ageing properties. An important aspect of such classifications is that the exponential distribution is nearly always a member of each class. The notion of stochastic ageing is important in any reliability analysis, and many test statistics have been developed for testing exponentiality against various ageing alternatives. This paper is an overview of these developments. The author begins with a table of ageing classes together with key references, followed by a brief discussion on the characterization of exponentiality. Test procedures are summarized, and followed by the main review. Tests of exponentiality against other alternatives are explained for randomly censored data. Finally, tests of multivariate ageing properties are listed. Some of the life classes have been derived more recently and, as far as is known, no test statistics have been proposed. On the other hand, several tests are available for some classes. Relative efficiency of a test is discussed whenever appropriate     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

Non‐reflecting artificial boundaries for transient scalar wave propagation in a two‐dimensional infinite homogeneous layer

This paper presents an exact non‐reflecting boundary condition for dealing with transient scalar wave propagation problems in a two‐dimensional infinite homogeneous layer. In order to model the complicated geometry and material properties in the near field, two vertical artificial boundaries are considered in the infinite layer so as to truncate the infinite domain into a finite domain. This treatment requires the appropriate boundary conditions, which are often referred to as the artificial boundary conditions, to be applied on the truncated boundaries. Since the infinite extension direction is different for these two truncated vertical boundaries, namely one extends toward x →∞ and another extends toward x→‐ ∞, the non‐reflecting boundary condition needs to be derived on these two boundaries. Applying the variable separation method to the wave equation results in a reduction in spatial variables by one. The reduced wave equation, which is a time‐dependent partial differential equation with only one spatial variable, can be further changed into a linear first‐order ordinary differential equation by using both the operator splitting method and the modal radiation function concept simultaneously. As a result, the non‐reflecting artificial boundary condition can be obtained by solving the ordinary differential equation whose stability is ensured. Some numerical examples have demonstrated that the non‐reflecting boundary condition is of high accuracy in dealing with scalar wave propagation problems in infinite and semi‐infinite media. Copyright © 2003 John Wiley & Sons, Ltd.     

高功率双工旋转场移相器

旋转场移相器具有移相精度高(均方根误差可小于1°)和温度稳定性好等特点,通过改进射频传输结构,可大大提高他的功率容量。利用旋转场移相器的互易特性和铁氧体圆极化器的非互易特性,设计出高功率双工旋转场移相器。其双工特性可将收/发信号分开,实现移相器和环行器的双重功能,用于天线的收发通道等场合时,可省去一个高功率环行器,结构紧凑。分析了双工旋转场移相器的工作原理,阐述了高功率应用下的设计方法,推导出了管状铁氧体的相移量计算公式,按此方法设计了实用的器件,并给出了试验数据。     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.