雷达导引头目标跟踪系统次优控制问题研究

常规雷达导引头是通过位标器输出目标视线角速度,对机构实现有着极高的要求．本文提出在雷达导引头设计中利用分离原理把最优跟踪问题分解为最优滤波和最优控制问题,在数据处理中实现最优滤波,而位标器仅用于指向跟踪,从而降低了对位标器机构的指标要求,并提高了跟踪精度。最后利用数值仿真验证了理论的正确性。     

Coexistence of multiple bifurcation modes in memristive diode-bridge-based canonical Chua’s circuit

Based on a memristive diode bridge cascaded with series resistor and inductor filter, a modified memristive canonical Chua’s circuit is presented in this paper. With the modelling of the memristive circuit, a normalised system model is built. Stability analyses of the equilibrium points are performed and bifurcation behaviours are investigated by numerical simulations and hardware experiments. Most extraordinary in the memristive circuit is that within a parameter region, coexisting phenomenon of multiple bifurcation modes is emerged under six sets of different initial values, resulting in the coexistence of four sets of topologically different and disconnected attractors. These coexisting attractors are easily captured by repeatedly switching on and off the circuit power supplies, which well verify the numerical simulations.     

A fluorescent porous silicon-based biosensor for small molecule detection

Fluorescent porous silicon was prepared as a stable biosensor chip substrate. The aminopropyltriethoxysilane (APTES) molecules are attached in the pores of the porous silicon with a crosslink method, and when the molecules are added into the chip, the fluorescence intensity is reduced according to the concentration of the APTES. Controlled experiments are also presented with the small molecule that cannot be covalently coupled, and the results show that this kind of sensor chip has better specificity. Compared with other conventional methods, this method is simple, quick and label-free.     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.     

一种带新型直流失调补偿电路的模拟数字控制可配置的自动增益控制器

本文提出一种可用于零中频接收机的模拟/数字控制可配置的自动增益控制环路的设计,应用一种新型的直流失调消除电路。这种自动增益控制环路可配置于模拟或者数字控制,以便与不同的基带芯片兼容。本文更进一步提出了一种新型的直流失调消除电路,这种直流失调消除电路实现了低于10KHz的下限截止频率（HPCF,high pass cutoff frequency）。自动增益控制环路电路采用0.18um CMOS工艺。当配置于模拟控制模式下,这种自动增益控制环路的增益动态范围为70dB,3dB带宽大于60M。当配置于数字控制模式下,通过5比特的数字控制码控制,这种自动增益控制环路的增益动态范围为64dB,步进精度2dB,步进误差小于0.3dB。当输入引入40mV直流失调,电路输出直流失调电压小于1.5mV。电路整体功耗小于3.5mA,面积800um*300um。     

IO单元自动排布算法IOAP

提出了一种应用于芯片物理设计过程中IO单元自动排布的新算法。IO单元排布是芯片物理设计过程中长期依赖经验的环节。IO单元排布的优化对布线,电源网格和设计收敛性的优化有很大贡献。文章重点研究边缘IO单元排布,提出了IO单元自动排布算法(IOAP)。此算法及其相关软件直接应用于视频解码芯片和无线传感器网络处理器芯片(已流片成功)的物理设计流程中。结果表明,IOAP有效改善了芯片的电源网格,时序和布线结果,减少了布线努力,提高了设计收敛性。     

基于Web服务的开放式地理信息系统的研究

在介绍Web服务与OpenGIS规范的基础上,提出了基于Web服务的开放式地理信息系统解决方案,设计并实现了资源目录服务、地理要素服务和地图服务,以及通过数据集成来定制地理要素和地图图层的手段,为地理信息数据的发布与共享提供了符合OpenGIS规范的软件工具。     

A Room‐Temperature High‐Conductivity Metal Printing Paradigm with Visible‐Light Projection Lithography

Fabricating electronic devices require integrating metallic conductors and polymeric insulators in complex structures. Current metal‐patterning methods such as evaporation and laser sintering require vacuum, multistep processes, and high temperature during sintering or postannealing to achieve desirable electrical conductivity, which damages low‐temperature polymer substrates. Here reports a facile ecofriendly room‐temperature metal printing paradigm using visible‐light projection lithography. With a particle‐free reactive silver ink, photoinduced redox reaction occurs to form metallic silver within designed illuminated regions through a digital mask on substrate with insignificant temperature change (<4 °C). The patterns exhibit remarkably high conductivity achievable at room temperature (2.4 × 10⁷ S m^?1, ≈40% of bulk silver conductivity) after simple room‐temperature chemical annealing for 1–2 s. The finest silver trace produced reaches 15 µm. Neither extra thermal energy input nor physical mask is required for the entire fabrication process. Metal patterns were printed on various substrates, including polyethylene terephthalate, polydimethylsiloxane, polyimide, Scotch tape, print paper, Si wafer, glass coverslip, and polystyrene. By changing inks, this paradigm can be extended to print various metals and metal–polymer hybrid structures. This method greatly simplifies the metal‐patterning process and expands printability and substrate materials, showing huge potential in fabricating microelectronics with one system.     

Wideband Frequency Synthesizer at X/Ku Band by Mixing and Phase Locking of Half Frequency Output of VCO

A wideband low phase noise frequency synthesizer at X/Ku band has been developed by using phase locking and mixing technique at half frequency of voltage controlled oscillator (VCO). The half frequency output signal of the VCO is down converted by a balanced mixer at C band to obtain an intermediate frequency (IF) signal used for phase locking of the VCO. An ultra low phase noise local signal source at 6 GHz is developed with a frequency multiplying chain driven by a 100 MHz oven controlled crystal oscillator (OCXO). Coupling circuit outside the VCO chip to the mixer does not need to be specially designed, which is beneficial to simplify the circuit scheme and improve the phase noise performance. Measurement results show that the phase noise of the output signal at 10.6 GHz to 11.8 GHz and 12.3 GHz to 13.0 GHz is better than −102 dBc/Hz at 10 kHz away form the carrier center. This frequency synthesizer can be used as local signal source or driving source for the development of wideband millimeter-wave frequency synthesizer systems.     

SiGe MOS器件SiO_2栅介质低温制备技术研究

为了获得电学性能良好的 Si Ge PMOS Si O2 栅介质薄膜 ,采用等离子体增强化学汽相淀积 (PECVD)工艺 ,对低温 30 0°C下薄膜制备技术进行了研究。实验表明 ,采用适当高温、短时间对PECVD薄膜退火有助于降低薄膜中正电荷密度和界面态密度。该技术用于 Si Ge PMOS研制 ,在30 0 K常温和 77K低温下 ,其跨导分别达到 45m S/mm和 92 .5m S/mm(W/L=2 0 μm/2 μm)