变频调速技术在污水处理厂的应用

概述污水处理厂的一般工艺，简单介绍了风机、水泵等的节能特点，介绍了变频调速装置在污水处理厂各处理工段的应用。     

不同施钾水平对玉米干物质及产量的影响

生物产量是提高经济产量的基础,而施肥是调控生物产量及其组分动态转化的重要手段。本研究通过不同施钾水平对玉米干物质积累动态变化的影响分析,确定出钾肥合理用量,为玉米高产高效栽培提供理论依据。     

立方相GaN的持续光电导

研究了金属有机物化学气相外延 (MOVPE)方法生长的非故意掺杂的立方相 Ga N的持续光电导效应 .在六方相 Ga N中普遍认为持续光电导效应与黄光发射有关 ,而实验则显示在立方 Ga N中 ,持续光电导效应与其中的六方相 Ga N夹杂有关系 ,而与黄光发射没有关系 .文中提出 ,立方相 Ga N与其中的六方相 Ga N夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因 .通过建立势垒限制复合模型 ,解释了立方相 Ga N的持续光电导现象的物理过程 ,并对光电导衰减过程的动力学作了分析 .对实验数据拟合的结果证明以上的模型和推导是与实验相符的 .     

Aroused problems in the deposition of diamond-like carbon films by using the liquid phase electrodeposition technique

Hydrogenated diamond-like carbon (DLC) films were prepared by using liquid phase electrodeposition technique. The effects of the applied potential and the carbon sources on the deposition process and film structures were studied. It has been found that the organic liquids with high dielectric constants, small viscosities and the methyl group bonding to the polar group are appropriate carbon sources. The increasing of potential improves the formation of sp³ carbon during the deposition process. In a high electric field, organic molecules are polarized and reacted on the surface of the electrode, turning out DLC and other products. It is believed that the reaction follows a polarization-reaction mechanism.     

室内设计中绿色设计的功效

绿色设计是一种将功能主义与可持续发展思想相结合的设计。文中就其形成的背景、设计原理及在室内设计领域中的应用进行一些探讨。     

Vortices in anisotropic type-II superconductors

We present a generalized variational model of an isolated vortex, valid in the anisotropic case when the external magnetic field is along one of the symmetry directions. We discuss the effects of the field anisotropy on the core and magnetic pinning of individual vortices.     

谈影响钻孔灌注桩承载力的因素

根据目前我国钻孔灌注桩的特点，从施工工艺方面，对控制沉渣、孔壁泥层过厚的问题进行了探讨，提出了合理、有效的措施，以确保桩基础承载力的正常发挥。     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

NMR structure and mutagenesis of the FADD (Mort1) death-effector domain

When activated, membrane-bound receptors for Fas and tumour-necrosis factor initiate programmed cell death by recruiting the death domain of the adaptor protein FADD to the membrane. FADD then activates caspase 8 (also known as FLICE or MACH) through an interaction between the death-effector domains of FADD and caspase 8. This ultimately leads to the apoptotic response. Death-effector domains and homologous protein modules known as caspase-recruitment domains have been found in several proteins and are important regulators of caspase (FLICE) activity and of apoptosis. Here we describe the solution structure of a soluble, biologically active mutant of the FADD death-effector domain. The structure consists of six antiparallel, amphipathic alpha-helices and resembles the overall fold of the death domains of Fas and p75. Despite this structural similarity, mutations that inhibit protein-protein interactions involving the Fas death domain have no effect when introduced into the FADD death-effector domain. Instead, a hydrophobic region of the FADD death-effector domain that is not present in the death domains is vital for binding to FLICE and for apoptotic activity.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.