L－B膜修饰电极循环伏安行为模拟──（Ⅰ）电荷转移速度常数对循环伏安性能的影响

本文用计算机数字模拟方法研究了电活性分子多层Ｚ型Ｌ－Ｂ膜修饰电极的循环伏安行为。计算了电极与修饰Ｌ－Ｂ膜分子第一层之间的电荷转移速度常数Ｋ_ｏ，Ｌ－Ｂ膜分子层间的电荷转移速度常数ｋ_ｉ；对峰电位差△Ｅ_ｐ及阳极峰面积Ｑ的影响，以及在不同条件下各层分子的氧化态分数随扫描时间的变化。为研究和设计电活性分子修饰电极的实际体系提供了大量数据和信息。     

新型实用布线算法──L─M算法

本文提出新型布线算法，集李氏迷宫法与线搜索法的长处为一体，以饱和带法进行动态排序，以线搜索法确定借孔位置，然后用李氏法进行单层布线，获得最佳路径，从而达到线型好，布通率高的效果。     

CAD-oriented formulas for the quasi-tem parameters of shielded and semi-enclosed (coupled) coplanar waveguides

On the magnetic-wall approximation for their slots, shielded coplanar waveguides (SCPWs) and semienclosed CPWs (SECPWs) are analyzed through an intensive use of elliptic function transformation. CAD-oriented formulas for the quasi-TEM parameters of SCPWs and SECPWs, including their coupled versions, are derived. The comparison of the results calculated here with previous ones show 2% accuracy for formulas in the practical situation where the slots are not too wide, e.g., s / (s + 2w) ≥ 0.2 for an SCPW. © 1994 John Wiley & Sons, Inc.     

废钢铁代用品

优质钢材的冶炼和高水平操作指标的获得需要优良的原料作保证。直接还原铁，碳化铁和脱碳粒铁作为废钢铁代用品，已显示出其价格和品质上的优越性，并弥补了废铁数量的不足，但因其各有自身的特点，故研究其理化性质和使用性能，将为大规模生产和使用创造必要的条件。     

醇镁还原法一步制取对氯苯胺的研究

醇镁还原法一步制取对氯苯胺是一种新的方法 ,研究发现最佳反应温度为 80℃～ 85℃ ,反应时间为4h ,对氯硝基苯与镁粉的用量 (物质的量比 )为 1∶3,产率为 80 %。     

Measurements of single chain form factors by small-angle neutron scattering from polystyrene blends containing high concentrations of labelled molecules

A series of small angle neutron scattering measurements on blends of normal polystyrene (PSH) and labelled (deuterated) polystyrene (PSD) have been made with concentrations of PSD from 5 to 50 mol %. It is shown that the single chain form factor of the polymer in bulk can be obtained from a single concentration measurement for any concentration of labelled molecules, providing the molecular weights of the parent and labelled molecules are the same and the molecular weight distributions are narrow.     

Delay-dependent state estimation for delayed neural networks

In this letter, the delay-dependent state estimation problem for neural networks with time-varying delay is investigated. A delay-dependent criterion is established to estimate the neuron states through available output measurements such that the dynamics of the estimation error is globally exponentially stable. The proposed method is based on the free-weighting matrix approach and is applicable to the case that the derivative of a time-varying delay takes any value. An algorithm is presented to compute the state estimator. Finally, a numerical example is given to demonstrate the effectiveness of this approach and the improvement over existing ones.     

End-User Computing in a CASE Environment

Computer-aided software engineering (CASE) tools are currently being used by IS professionals rather than by users. No matter how effective these tools may be, however, they will not be able to assist in the reduction of application backlogs without supporting user-driven applications. This article examines characteristics of a CASE environment from the various perspectives of decision support, identifies the advantages and limitations of end-user computing in this environment, and suggests how IS managers can realize the potentials of CASE for user applications.     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.