半绝缘砷化镓中碳含量对热稳定性的影响

本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10~(16)cm~(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10~(15)cm~(-3)时,通常表现出良好的热稳定性。     

钨铜合金药型罩及其性能

钨铜合金药型罩的应用可以提高射流对均质钢靶的侵彻能力.这一提高得益于射流密度的提高以及断裂时间的延长. 本文对钨铜合金射流及其断裂形态通过X光照像进行了研究.它的旋转效应及其炸高特性也进行了实验研究. 钨铜合金药型罩的威力实验在φ30 mm的破甲弹上进行.在相同装药条件下与紫铜罩相比,威力提高20～30%.     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

添加高效粘结剂的氧化锰矿粉冷固成团

以氧化锰矿粉为原料，添加ＺＢ粘结剂进行冷固成团，所得冷固团块不仅具有足够的机械强度，而且具有良好的耐湿性，适用于长距离运输和露天堆存，是一种可与块矿性能相媲美的优质炉料，为充分利用矿山及冶炼厂的锰矿粉找到了一条良好的途径．     

分层阅读提高学生的语文水平

通过课外阅读来迅速有效地提高学生语文素养和阅读鉴赏水平,成为当前语文教师在语文教学中的共识.但是针对学生的阅读现状、学生个性、心理习惯、阅读兴趣及阅读的基础水平的不同情况,来安排分层次的阅读教学却不多,往往形成了阅读以"一刀切"的方式进行,这就造成了阅读的浪费,费时又费力,还费钱财.要真正培养学生的阅读兴趣,提高语文素养,就必须在课外阅读中有目的地针对不同情况的学生进行不同层次的安排,这就是"分层次阅读".     

The use of doped polyaniline as an electrode in the galvanic anodic protection of ferrous metals in industrial acid solutions

In order to investigate the galvanic anodic protection (GAP) of ferrous metals (such as 410, 304 and 316 stainless steels) in acid solutions by doped polyaniline (PANi), separate doped PANi powder-pressed electrodes with different surface areas (the area ratio of the PANi electrode to stainless steel is between 1:1 and 1:2) have been prepared. These were coupled with ferrous metal in the following solutions: 5 M sulphuric acid, 5 M phosphoric acid and industrial phosphoric acid (containing 5 M phosphoric acid and 0.05% chloride ion) to construct a galvanic cell, in which PANi is cathode while ferrous metal is anode. The results indicate that a PANi electrode with sufficient area can provide corrosion protection to stainless steel in these acidic solutions. A pilot scale coupling experiment was carried out. The results indicate that PANi is a promising material as an electrode for the anodic protection of ferrous metals in acidic solutions in industrial situations.     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress     

地图中铁路、道路提取和恢复显示的方法

本文提出一种从军用地图中提取铁路、道路的半自动方法和自动恢复显示其在地图中标识方式的算法,从而进一步实现地图图形显示系统的多层次结构。     

β放射性气体浓度计的新分度方法

本文介绍β放射性气体浓度计的一种新的分度方法——泄漏元件排气法。其特点是一只元件可分度放射性气体浓度计的许多读出数(甚至是几个量程),操作方便。     

Nested multigrid vector and scalar potential finite element method for fast computation of two-dimensional electromagnetic scattering

Nested multigrid techniques are combined with the ungauged vector and scalar potential formulation of the finite-element method to accelerate the convergence of the numerical solution of two-dimensional electromagnetic scattering problems. The finite-element modeling is performed on nested meshes of the same computational domain. The conjugate gradient method is used to solve the resultant finite-element matrix for the finest mesh, while the nested multigrid vector and scalar potential algorithm acts as the preconditioner of the iterative solver. Numerical experiments are used to demonstrate the superior numerical convergence and efficient memory usage of the proposed algorithm.