An Accurate and Cost-Effective Jitter Measurement Technique Using a Single Test Frequency

An accurate and cost-effective jitter measurement technique is proposed. The new technique uses only a single test with a high frequency input sine wave. Eliminating the need for a 2nd low frequency test, which is required in the conventional dual-frequency jitter test, provides significantly savings in both hardware and data acquisition time. The new technique is computationally efficient since it requires only one FFT together with some simple time domain computation. Furthermore, there are no nonlinear operations involved, hence avoiding errors inherently associated with such operations. Theoretical analysis, extensive simulation results and experimental results show that the proposed technique is cost-effective and achieves comparable test accuracy to that achieved by the conventional dual-frequency test. The new technique is reliable and robust to both harmonic and non-harmonic distortions. The algorithmic simplicity and the relaxed hardware requirement make the new technique potentially suited for built-in self test.     

一种Ares协议的精确识别方法

针对单独的深度数据包检测(Deep packet inspection,DPI)技术无法识别加密报文,以及基于流量特征识别方法对流量检测的模糊性等问题,采用DPI和基于流量特征相结合的方法来对Ares协议进行精确的识别,以提高对Ares协议的识别效果,实验表明准确率可以达到97％以上.     

基于Gabor和核监督局部保持投影的单样本人脸识别算法

针对目前主流人脸识别算法,在单样本条件下,当性能严重下降根本无法工作时,提出了一种结合Gabor和核监督局部保持投影的单样本人脸识别算法.选取数据库中中性表情的近正面人脸图像作为训练样本,通过几何变换产生15幅虚拟样本,对每幅样本图像提取Gabor特征,采用核监督局部保持投影方法进行特征提取,欧氏距离最近邻分类器进行分类.根据ORL数据库、Yale数据库和FERET数据库上的实验结果表明,核监督局部保持投影(GKSLPP)算法具有较好的识别效果.     

Incremental learning approach based on vector neural network for emitter identification

To deal with the problem of emitter identification (EID) caused by the measurement uncertainty of emitter feature parameters and to realise the automatic updating of the emitter database, which is usually used as emitter templates in identification processing, a vector neural network based incremental learning (VNNIL) approach for EID is proposed. This method combines the vector neural networks (VNNs) and the ensemble-based incremental learning (Learn++) algorithm. The VNN is adopted to construct a weak classifier and the Learn++ is used to generate ensembles of the weak classifiers. Considering that the VNN can realise the non-linear mapping between the interval-value input data and the interval-value output emitter types, and that the Learn++ can update the emitter database automatically, the VNNIL treats the two mentioned problems above as a single one and realises EID and parameters updating at the same time. A number of simulations are presented to demonstrate the identification and updating capability of the VNNIL algorithm. As shown in the simulation results, the VNNIL algorithm not only possesses a better learning and identification capability, but also achieves a better noise adaptability.     

无线Ad hoc网络中基于节点停留概率的路径压缩

该文提出一种基于节点停留概率的路径压缩算法NSP-PCA。通过计算造成路径变化的节点相对于另一节点传输区域的停留概率,动态预测压缩路径的稳定性,并以此为依据决定压缩操作的优先级。仿真表明,NSP-PCA能有效控制短暂缩减和多次缩减等非正常压缩,在端到端时延,路由开销和包发送率方面均优于SHORT和PCA压缩算法。     

无障碍可调节腋支撑行走助力器的设计研究

针对老年人和下肢残疾者出行问题,设计了一种无障碍可调节腋支撑的行走助力器,该行走助力器不仅具有新型的腋支撑机构,而且在行走腿前部减少了阻挡构件,延长了使用者的步距,降低了使用者视觉上的障碍恐惧心理。     

无线城市：从热点服务到全面应用

目前大部分发达国家和地区均开展了无线城市的建设,但由于普遍缺乏较为成功的商业模式,业务应用较为单一,因此效果不够理想。我国无线城市的运营应基于全球无线城市的运营经验,必须把握几个关键点,即获取政府支持、创新商业模式、打造统一平台、丰富业务应用、强化网络支撑等。     

超大型网络圆锥曲线密码管理解决方案

二进制域上圆锥曲线密码是一种新型的公钥密码系统,在随机选取曲线参数,明文嵌入方面较椭圆曲线有优势.针对在超大型网络系统中,各种密码管理混乱、安全隐患严重的问题,利用圆锥曲线的优点,提出了一种安全的密码管理解决方案,该方案利用圆锥曲线/AES混合加密的方式保证密钥传输中的机密性、完整性、不可否认性.该方案对于强化超大型网络系统的运维管理有一定的实际意义.     

Unexpected Sole Enol‐Form Emission of 2‐(2′‐Hydroxyphenyl)oxazoles for Highly Efficient Deep‐Blue‐Emitting Organic Electroluminescent Devices

Considerable efforts have been devoted to the development of highly efficient blue light‐emitting materials. However, deep‐blue fluorescence materials that can satisfy the Commission Internationale de l'Eclairage (CIE) coordinates of (0.14, 0.08) of the National Television System Committee (NTSC) standard blue and, moreover, possess a high external quantum efficiency (EQE) over 5%, remain scarce. Here, the unusual luminescence properties of triphenylamine‐bearing 2‐(2′‐hydroxyphenyl)oxazoles ( 3a–3c ) and their applications in organic light‐emitting diodes (OLEDs) are reported as highly efficient deep‐blue emitters. The 3a ‐based device exhibits a high spectral stability and an excellent color purity with a narrow full‐width at half‐maximum of 53 nm and the CIE coordinates of (0.15, 0.08), which is very close to the NTSC standard blue. The exciton utilization of the device closes to 100%, exceeding the theoretical limit of 25% in conventional fluorescent OLEDs. Experimental data and theoretical calculations demonstrate that 3a possesses a highly hybridized local and charge‐transfer excited state character. In OLEDs, 3a exhibits a maximum luminance of 9054 cd m^?2 and an EQE up to 7.1%, which is the first example of highly efficient blue OLEDs based on the sole enol‐form emission of 2‐(2′‐hydroxyphenyl)azoles.     

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R _rms) of 1.97?nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86?nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k _t ² ) is 5.1% with series and parallel frequencies of 2.37?GHz and 2.42?GHz, respectively.