Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Modeling Temperature in Coupled Electrical and Thermal Simulations of the Electroconsolidation® Process

Electroconsolidation® is a process for densifying complex-shaped parts by using electrically conductive particulate solids as a pressure-transmitting medium. The part is immersed in a bed of the particulate medium contained in a die chamber. Sintering temperature is achieved by resistive heating of the medium while applying compaction pressure. The process is capable of ultrahigh temperatures and short cycle times and offers the potential for low processing costs.

Control of the process and selection of process conditions require knowledge of the temperatures within the die. Temperature gradients exist because of the high heating rate and because of variations of density and electrical resistivity of the medium due to the presence of the part. Direct measurement of temperature with thermocouples or other conventional means is impractical because of the high temperatures, high currents, and high pressures that are involved. Therefore, a computer model was developed to predict temperature as a function of time and applied voltage for any location in the die. The computer model is composed of three parts: a geometrical model to approximate the density and resistivity variations in the medium, a finite-element model to calculate the rate of resistive heating within each element, and a finite-difference model to calculate the temperature distribution based on solution of the heat-transfer equations. Predicted temperatures have been shown to be in excellent agreement with measurements, and numerical simulation provided encouraging consistency and reasonably accurate predictions of temperature profiles within the die. The model demonstrated the feasibility of a new process to achieve simultaneous application of pressure and heat to powder densification in Electroconsolidation.     

The Effect of Run Time on the Inter-Unit Uniformity of Aqueous Film Coating Applied to Glass Beads in a Hi-Coater

Coating experiments were conducted to assess the inter-unit uniformity using individual weight gains of glass beads. Applying more aqueous film coating and prolonging the film-coating process by diluting the coating suspension did improve the coating variability among glass beads. It appears that run time is an important underlying factor which affecting the inter-unit coating uniformity.     

On the design of multiple key hashing files for concurrent orthogonal range retrieval between two disks

This paper concerns the following problem: given a set of multi-attribute records, a fixed number of buckets and a two-disk system, arrange the records into the buckets and then store the buckets between the disks in such a way that, over all possible orthogonal range queries (ORQs), the disk access concurrency is maximized. We shall adopt the multiple key hashing (MKH) method for arranging records into buckets and use the disk modulo (DM) allocation method for storing buckets onto disks. Since the DM allocation method has been shown to be superior to any other allocation methods for allocating an MKH file onto a two-disk system for answering ORQs, the real issue is knowing how to determine an optimal way for organizing the records into buckets based upon the MKH concept.

A performance formula that can be used to evaluate the average response time, over all possible ORQs, of an MKH file in a two-disk system using the DM allocation method is first presented. Based upon this formula, it is shown that our design problem is related to a notoriously difficult problem, namely the Prime Number Problem. Then a performance lower bound and an efficient algorithm for designing optimal MKH files in certain cases are presented. It is pointed out that in some cases the optimal MKH file for ORQs in a two-disk system using the DM allocation method is identical to the optimal MKH file for ORQs in a single-disk system and the optimal average response time in a two-disk system is slightly greater than one half of that in a single-disk system.     

Effect of storage temperature on phenolics stability in hawthorn (Crataegus pinnatifida var. major) fruits and a hawthorn drink

The stability of five major phenolics, namely (−)-epicatechin (EC), procyanidin B₂ (PC-B₂), chlorogenic acid (ChA), hyperoside (HP) and isoquercitrin (IQ), in hawthorn fruits and a canned hawthorn drink were evaluated during 6 months of storage in the dark at three different temperatures (4, 23 and 40 °C). HPLC with a diode-array detector was used to determine the contents of the individual compounds. The results showed that the studied phenolics in the hawthorn fruits and the drink were both stable at 4 °C and relatively unstable at 23 and 40 °C with varied extents of degradation. At room temperature (23 °C), marked degradations of EC and PC-B₂ were observed in both the fruits and the drink with around 50% and 30% decrease after a 6-month storage, respectively. A more significant decrease of the phenolics was observed at 40 °C, especially for EC and PC-B₂, which were almost completely degraded after a 6-month storage. HP, IQ and ChA were relatively stable at 23 °C, but unstable at 40 °C. Therefore, low-temperature storage is recommended for maintaining the quality and efficacy of hawthorn fruits and its preparations.     

Kinetics of AuSn4 migration in lead-free solders

The relatively fast diffusion of Au atoms in eutectic PbSn matrix is considered one of the contributing factors to the Au embrittlement problem. In this study, we further investigated the Au embrittlement problem in high-Sn solders. Experimentally, Sn3.5Ag (wt.%) spheres with 500-μm diameter were soldered over the Au/Ni soldering pads. It was found that some of the AuSn₄ needles that formed after reflow inside the solder migrated back to the solder/pad interface during thermal aging. However, the migration kinetics in high-Sn solders was slower compared to that in eutectic PbSn. The difference in migration kinetics of AuSn₄ in eutectic PbSn and SnAg was ascribed to the difference in the magnitudes of the Au flux and the Ni flux. In eutectic PbSn, the Au flux was much greater than that of the Ni flux, and the Au and Ni flux were in the same order of magnitude in eutectic SnAg. The relative magnitude of the Au and Ni flux changed in eutectic PbSn and SnAg because the homologous temperatures of PbSn and SnAg were different.