Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.     

土壤中氮磷浸出对水库水质影响的模拟实验研究

水库建成蓄水后,库底土壤中氮、磷的浸出会对库水水质会产生一定影响。本文以南水北调中线工程的调蓄水库———瀑河水库为例,在现场调查基础上,使用蒸馏水和模拟水分别进行模拟实验,分析研究了土壤中氮、磷浸出对库水中总氮、总磷浓度的影响。实验结果表明,总氮、总磷的浓度均发生一定程度的变化,且模拟水中的浓度变化小于蒸馏水中的变化;但从整体趋势看,源于土壤的含量较低,对库水水质未产生明显不良影响。     

基于CFX的大型聚光光伏跟踪器动力设计

根据聚光光伏系统的设计参数,确定了CPV组件数目和布置形式。基于系统安装地点的历史风速和系统预期寿命,按照风速计算理论计算了跟踪器的设计风速。利用CFX对组件风压进行数值模拟,获得了动力设计需要的方位力矩和仰俯力矩。在此基础上,对跟踪器进行了动力设计,并讨论了方案的选择方法。     

求解线性时变系统状态方程的一种新方法

本文给出了移位雅可比多项式的乘积运算矩阵,利用该矩阵,将时变系统的状态方程等效变换为一个简单的矩阵代数方程,使其求解大为简化。通过对两个实例的计算,获得了相当令人满意的结果。     

叉头一模两件预成形过程的数值模拟分析

锻造成形过程是一个非常复杂的弹塑性大变形过程,有限元法是用于锻造成形过程模拟中一种有效的数值计算方法。通过数值模拟技术分析叉头锻件改成一模两件的预成形过程,优化预成形模具型腔,获得合理的生产工艺,达到提高原材料利用率和生产班产量,并获得合格终锻件的目的。     

Integrated solid-state nanopore devices for third generation DNA sequencing

Third generation DNA sequencing relies on monitoring the ionic current blockage during the DNA molecule’s threading through a nanoscale pore.It is still really tough to attain the single base discrimination on a DNA strand by merely analyzing the ionic current due to speedy DNA translocation and low spatial resolution.More integrated configurations are pursued to present versatile comparative dissimilarities of the four bases by enhancing the spatial resolution within a DNA molecule translocation event,such as transverse tunneling current,local potential change,and capacitance oriented voltage resonance.In this mini review,the insight is provided into the status quo on several functionalized techniques and methodologies for DNA sequencing and furthermore concluding remark and outlook are presented.     

一种新型的IGBT驱动保护电路

介绍一种新型的性能较完善的IGBT驱动保护电路。实验结果表明,该电路能快速、安全、可靠地实现保护功能。     

放射性同位素XRF技术中一种与“特散比”法等效的新方法

在一定的条件下,待测元素特征X射线和康普顿散射强度比值,与待测元素特征X射线强度和带吸收滤片所测量的强度比值之间有着简单的双曲函数关系。利用这一函数关系,很容易在单道携带式放射性同位素X射线荧光分析仪上实现“特散比”法改善基体效应。用这种方法所得到的分析结果和用“特散比”法得到的分析结果,二者吻合很好,而且不需要增加任何设备,节省了测量时间和成本。已经测量了几种类型的锡矿样品和某些铜矿样品。     

Martensitic stabilization and defects induced by deformation in TiNi shape memory alloys

Martensitic stabilization caused by deformation in a TiNi shape memory alloy was studied.Special attention was paid to the deformed microstructures to identify the cause of martensitic stabilization.Martensitic stabilization was demonstrated by differential scanning calorimetry for the tensioned TiNi shape memory alloy.Transmission electron microscopy revealed that antiphase boundaries were formed because of the fourfold dissociation of[110]B19'super lattice dislocations and were preserved after reverse transformation due to the lattice correspondence.Martensitic stabilization was attributed to dislocations induced by deformation,which reduced the ordering degree of the microstructure,spoiled the reverse path from martensite to parent phase compared with thermoelastic transformation,and imposed resistance on phase transformation through the stress field.