首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   269篇
  免费   20篇
  国内免费   4篇
电工技术   3篇
化学工业   101篇
金属工艺   9篇
机械仪表   13篇
建筑科学   7篇
能源动力   11篇
轻工业   34篇
水利工程   2篇
石油天然气   4篇
无线电   18篇
一般工业技术   40篇
冶金工业   24篇
自动化技术   27篇
  2024年   2篇
  2023年   5篇
  2022年   8篇
  2021年   23篇
  2020年   23篇
  2019年   10篇
  2018年   16篇
  2017年   26篇
  2016年   18篇
  2015年   13篇
  2014年   21篇
  2013年   34篇
  2012年   6篇
  2011年   17篇
  2010年   20篇
  2009年   9篇
  2008年   5篇
  2007年   6篇
  2006年   4篇
  2005年   2篇
  2004年   4篇
  2003年   1篇
  2002年   2篇
  1998年   4篇
  1997年   3篇
  1996年   3篇
  1995年   1篇
  1994年   2篇
  1993年   1篇
  1992年   1篇
  1991年   1篇
  1987年   1篇
  1981年   1篇
排序方式: 共有293条查询结果,搜索用时 0 毫秒
291.
Today, telecommunications, data processing, physics and electronics, take a very important place in the activities of research of the various laboratories. In the field of the ultra high frequencies, the field-effect transistor MOSFET caused many studies and research to exploit its interesting and promising characteristics as well as possible. The objective of this contribution is devoted to study the static properties I-V of MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program, one could notice that the MOS transistor characteristics are very sensitive to the temperature. The load of inversion via the threshold voltage and the mobility of the carriers are the two principal impacted parameters, it was noted that the increase in the temperature induces a drop of the threshold voltage like that of mobility, and an immediate consequence of this reduction is the diminution in the drain current. One can thus conclude that the temperature influences the performances of the device; more it is low, better is the reliability of the device under operation.  相似文献   
292.
Due to the large applications of hydrogen as a feedstock of chemical industries and as an energy carrier, its production on large scales with low costs has attracted researchers. Steam reforming of methane (SRM) is the most common process for producing H2-rich syngas over Ni/Al2O3 catalysts, which suffer from coke deposition and Ni particles agglomeration. For overcoming these issues, we have synthesized mesoporous alumina (MA) as a supporting material of Ni particles, structure, and activity, which were compared with the bulk alumina (BA) supported catalysts in the SRM process for the first time. Besides, cerium as an appropriate promoter for lowering deposited coke was added to all prepared catalysts. The reaction temperature (600–700°C), Ni loading (10–25 wt.%), and Ce loading (1–5 wt.%) were the parameters that were optimized for maximizing H2 yield and CH4 conversion. Prepared samples were characterized by various techniques before and/or after reaction. The results of TEM and XRD depicted the formation of nanocrystalline and mesoporous structure for Ni-MA catalysts compare to Ni-BA samples. The observations indicated that 20Ni-3Ce/MA had the highest catalytic performance, achieving a CH4 conversion of 91.0% and H2 yield of 92.8% at 700°C.  相似文献   
293.
This article presents the correlation between rheology and morphology of nanocomposite foams of low‐density polyethylene (LDPE), ethylene vinyl acetate (EVA), and their blends. LDPE/EVA nanocomposites were prepared via melt mixing and then foamed using batch foaming method. To assess the rheological behavior of polymer melts, frequency sweep and creep recovery tests were done. Morphology of the samples was also studied by scanning electron microscopy and X‐ray diffraction. The results showed that with increase in clay content, storage modulus, complex and zero shear viscosities will be increased, which affect the foam morphology. In addition, elasticity plays an important role in foaming process, in a way that samples with more elasticity percentage have the highest cell density and the lowest cell size. POLYM. COMPOS., 31:1808–1816, 2010. © 2010 Society of Plastics Engineers.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号