高效液相色谱法同时测定化妆品中的7种香豆素

基于香豆素类化合物在化妆品中的使用情况及其对人体健康的危害,采用C18色谱柱作为分析柱,通过优化试验条件建立了一种可准确、简便测定化妆品中多种香豆素类化合物的高效液相色谱法。试验结果表明,7种香豆素类化合物的保留时间和峰面积的相对标准偏差分别小于0.1%和2%,且检出限均低于40μg/L;通过样品加标试验,得到7种目标化合物的回收率为80%~94%。所建立方法具有快速、简便、准确、灵敏的特点,是测定化妆品中多种香豆素类化合物的有效方法。     

Towards a Better Prediction of Cell Settling on Nanostructure Arrays—Simple Means to Complicated Ends

Vertical arrays of nanostructures (NSs) are emerging as promising platforms for probing and manipulating live mammalian cells. The broad range of applications requires different types of interfaces, but cell settling on NS arrays is not yet fully controlled and understood. Cells are both seen to deform completely into NS arrays and to stay suspended like tiny fakirs, which have hitherto been explained with differences in NS spacing or density. Here, a better understanding of this phenomenon is provided by using a model that takes into account the extreme membrane deformation needed for a cell to settle into a NS array. It is shown that, in addition to the NS density, cell settling depends strongly on the dimensions of the single NS, and that the settling can be predicted for a given NS array geometry. The predictive power of the model is confirmed by experiments and good agreement with cases from the literature. Furthermore, the influence of cell‐related parameters is evaluated theoretically and a generic method of tuning cell settling through surface coating is demonstrated experimentally. These findings allow a more rational design of NS arrays for the numerous exciting biological applications where the mode of cell settling is crucial.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

双馈风机低电压穿越的改进技术

为提高电压跌落条件下双馈风电机组的运行稳定性,介绍了crowbar与chopper共同配合作用的低电压穿越技术,并从提高crowbar阻值整定上限这一角度通过理论分析与仿真验证说明了crowbar与chopper配合作用的优势。提出低电压穿越过程中机侧变流器的无扰切换控制方法,通过仿真验证了这种方法可以大大减少crowbar投切次数与低穿过渡时间,且控制简单可行。     

A practical reliability assessment approach and its application for pile-stabilized slopes using FORM and support vector machine

Bulletin of Engineering Geology and the Environment - Many uncertainties exist in pile-stabilized slopes which make their design substantially complicated. In this paper, a first-order reliability...     

500 kV 开关弹簧机构支架螺栓断裂的原因分析及处理

HPL500B2型弹簧机构支架(BA)螺栓断裂可能导致开关分合闸失败,对其原因进行分析,发现BA螺栓由于预紧固力矩过大,接近其扭断力矩,使得作用在BA螺栓上的力偏高,BA螺栓安全系数仅为12%,安全系数较低。列出BA螺栓更换步骤及注意事项,并详细介绍分闸、合闸弹簧调整步骤,为类似事件的处理提供参考。