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31.
33.
变电站PT保险熔断现象机理分析 总被引:1,自引:0,他引:1
在公司辖内的变电站中,电压互感器(PT)保险熔断现象时有发生,影响了电网的安全稳定运行。文章结合变电站现场发生的PT保险熔断现象,通过理论分析,对变电站PT保险熔断现象的根本原因做出解释,并提出解决此问题的方向。 相似文献
34.
The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells(MQWs) has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×1018 to 5.24×1018 cm-2,and the V-defect width and depth increase too.The density also increases with the growth temperature.The densities are 2.05×108,2.72×1018 and 4.23×108 cm-2,corresponding to a growth temperature of 748,753 and 758℃respectively.When the NH3 flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×1018,2.72×1018 and 4.13×1018 cm-2,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth mode.We get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH3 flow at 6600 sccm,a flatter surface and less V-defects density.The depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 nm.In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs,it is essential to grow thicker p-GaN to fill the V-defects. 相似文献
35.
With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543μA,and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of 2000 V increases from 60%to 90%. 相似文献
36.
插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应 总被引:1,自引:1,他引:0
在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。 相似文献
37.
The advantages of In Ga N/Ga N light emitting diodes(LEDs) with p-Ga N grown under high pressures are studied.It is shown that the high growth pressure could lead to better electronic properties of p-Ga N layers due to the eliminated compensation effect.The contact resistivity of p-Ga N layers are decreased due to the reduced donor-like defects on the p-Ga N surface.The leakage current is also reduced,which may be induced by the better filling of V-defects with p-Ga N layers grown under high pressures.The LED efficiency thus could be enhanced with high pressure grown p-Ga N layers. 相似文献
38.
研讨化肥对农业发展的重要作用,通过从不同方面的比较分析,论述了化肥有着有机肥料无法比拟和替代的优势,强调了化肥生产要密切适应现代农业发展的要求,积极进行结构调整和产品优化。 相似文献
39.
近日,住房和城乡建设部出台<全国城镇生活垃圾处理信息报告、核查和评估办法>(以下简称<办法>),确定由住房和城乡建设部负责"全国城镇生活垃圾处理管理信息系统"(以下简称信息系统)平台建设,负责全国城镇生活垃圾处理项目建设和运营的信息分析、总体评估和通报工作,对各地相关工作进行指导、监督和专项督察. 相似文献
40.
A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction(XRD)characterization both proved the high quality of the AlN template.The XRD(002)rocking curve full width at half maximum(FWHM)was about 53.7 arcsec and(102)FWHM was about 625 arcsec.The densities of screw threading dislocations(TDs)and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD (002) rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and (102) FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer. 相似文献