单晶SnO2纳米带裂纹形核的临界应力和断裂韧性

使用纳米压痕法测量了单晶SnO2纳米带的硬度、断裂韧性以及裂纹形核的临界应力。结果表明，当载荷大于临界值后微裂纹就从压痕顶端形核、扩展；与此相应，在载荷一位移曲线上出现位移突变平台，根据平台载荷计算出压痕裂纹形核的临界应力σc=3．4GPa；利用裂纹的长度计算出SnO2纳米带的断裂韧性为0．028—0．066MPa-m^1／2，其平均值为KIc=0．044MPa-rn^1／2，它比其它块体脆性材料的断裂韧性小一个数量级,实验测出SnO2纳米带的硬度H=6．25GPa和弹性模量E=86．7GPa。     

浸蚀促进BaTiO3单晶的畴变和裂纹扩展的研究

研究了浸蚀对极化和未极化的BaTiO3单晶中畴变和压痕裂纹扩展的影响.结果表明,对面内极化试样(即极化方向[001],压痕面(100)),用HCl+HF水溶液浸蚀20 s,其压痕裂纹的平均长度由(140±17)μm扩展至(211±26)μm,即增长50%,同时压痕裂纹所围的90°畴变区也明显增大;先浸蚀再打压痕和压痕后再浸蚀所得的结果相同.其原因和浸蚀剂分子吸附降低表面能有关.对离面极化试样(即压痕面(001)垂直于极化方向[001]),则浸蚀对其裂纹长度和畴变区基本没有影响.对未极化试样,浸蚀使其裂纹长度从(150±21)μm增至(182±30)μm,即增长约20%,同时畴变区亦增大.     

二元组合材料芯片电化学性能的高通量表征

尝试了利用丝束电极方法(wire beam electrode,WBE)对Cu-Cr,Ni-Cr系二元成分连续分布组合材料芯片的腐蚀电位、电偶电流密度等电化学性能进行了高通量测试和表征,并与常规电化学方法(交流(AC)阻抗、电偶腐蚀实验)的结果进行了对比。丝束电极方法测试二元组合材料芯片的结果表明,对于Cu-Cr系二元组合材料芯片而言,随着组合材料芯片中Cr含量的不断增加,腐蚀电位不断正移,电偶电流密度不断减小,耐蚀性能增强;对于Ni-Cr系二元组合材料芯片而言,随着组合材料芯片中Cr含量的不断增加,腐蚀电位不断正移,耐蚀性能增强。同时,电偶电流密度也随着Cr含量的增加而增大,这主要与Cr含量较高的芯片区域中出现第二相有关。丝束电极方法在100 s内就完成了对二元组合材料芯片的高通量电化学测量,且与常规电化学方法测试的结果一致,证明了丝束电极方法作为一种新的高通量电化学表征方法具有可行性。     

BaTiO3铁电陶瓷的应力腐蚀

研究了BaTiO3铁电陶瓷在恒载荷下的应力腐蚀,环境分别为湿空气、水、硅油和甲酰胺.结果表明,BaTiO3铁电陶瓷在湿空气、硅油、水和甲酰胺中都能发生应力腐蚀,其本质是介质分子吸附降低表面能.在空气中的瞬时断裂为穿晶断裂,滞后断裂大部分为穿晶断裂,局部为沿晶断裂.在这四种环境中,归一化应力腐蚀门槛应力强度因子分别为KIsCC/KIC=0.78(空气),0.63(水),0.66(硅油)和0.82(甲酰胺),其断裂韧性为KIC=1.29±0.14 MPa·m1/2.     

溶液热合成法制备纳米结构SiC

纳米线／管作为纳米结构材料的重要结构形式成为材料界研究热点。人们利用各种方法制备出了金属、非金属和有机材料的纳米线／管，并不断发现材料在纳米尺度上一些新奇特异的性质，以及在众多领域新的甚至革命性的应用前景。     

The role of atomic hydrogen and hydrogen-induced martensites in hydrogen embrittlement of type 304L stainless steel

The role of atomic hydrogen and hydrogen-induced martensites in hydrogen embrittlement in slow strain rate tensile tests and hydrogen-induced delayed cracking (HIC) in sustained load tests for type 304 L stainless steel was quantitatively studied. The results indicated that hydrogen-induced martensites formed when hydrogen concentration C0 exceeded 30 ppm, and increased with an increase in C0, i.e. M(vol%) =62-82.5exp( - C0/102). The relative plasticity loss caused by the marten-sites increased linearly with increasing amount of the martensites, i.e. Iδ(M),% = 0.45M(vol %) = 27.9-37.1 exp( -C0/102). The plasticity loss caused by atomic hydrogen Iδ(H) increased with an increase in C0 and reached a saturation value Iδ(H)max = 40% when C0 > 100 ppm. Iδ( H) decreased with an increase in strain rate E , i.e. Iδ (H), % = - 21.9 - 9. 9(?), and was zero when (?)≥(?)c = 0.032/ s. HIC under sustained load was due to atomic hydrogen, and the threshold stress intensity for HIC decreased linearly with lnC0, i.e     

Chemisorption-facilitated dislocation emission and motion, and induced nucleation of brittle nanocrack

Using a special TEM constant deflection device, the change in dislocation configuration ahead of a loaded crack tip before and after adsorption of Hg atoms and the initiation of liquid metal-induced nanocracks (LMIC) have been observed. The results show that chemisorption of Hg atoms can facilitate dislocation emission, multiplication and motion. Nanocracks will be initiated in the dislocation-free zone (DFZ) or at the crack tip when chemisorption-facilitated dislocation emission, multiplication and motion reach a critical condition. On the basis of the available experimental evidence concerning liquid metal embnttlement (LME), a new mechanism for this phenomenon is considered. This involves the fact that the decrease in surface energy induced by chemisorption of Hg atoms results in a reduction in the critical stress intensity factors for dislocation emission and the resistance for dislocation motion. On the other hand, the plastic work and KIC will decrease with the decrease in the surface energy.     

航天器用钛合金氢致结构演变及氢脆表征方法研究

采用室温电化学充氢方法对航天器用TC4钛合金式样充氢,通过对充氢式样进行XRD分析,探究了不同氢含量对钛合金结构的影响,分析了不同氢含量的合金组织结构变化及分布情况。采用慢应变速率拉伸、200h持久加载及逐级加载等力学试验,对不同氢含量的TC4合金的氢脆敏感性进行了表征,发现逐级加载不仅能提供氢脆敏感性的定性结论,同时给出不同氢含量合金试样的承载载荷定量数据。     

电场对不同极化状态PZT-5H铁电陶瓷断裂韧性的影响

用缺口拉伸试样研究了未极化、沿长度和厚度极化的PZT-5H铁电陶瓷表观断裂韧性随各种外加电场的变化.结果表明:在各种情况下,表观断裂韧性都随外电场的增加而线性降低.力、电耦合下的断裂判据为KI(σ) KI(E)=KIc,其中:KIc为断裂韧性,KI(σ)和KI(E)分别为应力σ和电场E引起的应力强度因子.KI(E)=ψYE√a/[(1-ν2)Ec],其中:y是Youg's模量,ν是Poisson比,Ec是矫顽场,α是裂纹长度;当电场垂直或平行于裂纹面时,ψ分别为2.3×10-4或1.3×10 4,而和电场正、负号以及极化状态无关.     

电场对铁电陶瓷压痕裂纹的作用

研究了极化锆钛酸铅（PZT-5）铁电陶瓷压痕裂纹在硅油中电场作用下的扩展过程。结果表明,当外加电场强度大于裂纹瞬时扩展临界电场强度（Eip=5.25kv/cm）,压痕裂纹能够发生瞬时扩展,继续保持恒电场,裂纹会继续扩展。当外加电场强度小于裂纹瞬时扩展临界电场强度,裂纹不发生瞬时扩展,但保持恒定电场,裂纹会发生滞后扩展。同时,裂纹扩展量显示各向异性,与垂直于电场方向裂纹相比,平行于电场方向的裂纹扩展量很小。