Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer

Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes(LEDs),the strain in the epilayer was increased,the dislocation density was reduced.GaN-based LEDs with different Al compositions were compared.6.8%Al composition in the stacks showed the highest electrostatic discharge(ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.     

基于平面线圈的石英挠性加速度计的初步设计

针对石英挠性加速度计目前存在的稳定性不好、温漂较大及不能兼顾大量程和高灵敏度测量等问题,提出了使用通电线圈代替永磁材料提供支承磁场,在石英摆片上双面光刻螺旋线圈作为力矩线圈的构想,并以此为基础初步设计了基于平面线圈、灵敏度可调的石英挠性加速度计.经过建模分析,可以达到预想的效果.     

AlGaN/GaN层叠结构插入层改善氮化镓基发光二极管抗静电性能研究

在GaN基发光二极管的uGaN与nGaN之间插入AlGaN/GaN层叠结构,增大了外延层的张应力,降低了外延层中的穿透位错密度,改善了外延材料的质量。对比了AlGaN/GaN层叠结构中不同Al组分对LED的抗静电能力的影响,含6.8%铝组分AlGaN/GaN层叠结构的LED人体模式抗静电能力提高到了6000V,合格率超过了95%。