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11.
采用磁控溅射法以铌(Nb)掺杂氧化铟锡(ITO)为靶材制备了厚度为300nm的ITO:Nb薄膜,研究了不同基底温度下,薄膜的结构、导电性和可见光区的透过率。XRD分析表明所制备的ITO:Nb薄膜均为In2O3相;AFM显示ITO:Nb薄膜的均方根粗糙度随着温度的升高逐渐变大;薄膜的电阻率随着温度的升高逐渐减小,在300℃时得到最小值1.2×10-4·cm。电阻率下降主要是因为霍耳迁移率增大和载流子浓度逐渐增加。ITO:Nb薄膜在可见光内的平均透过率均大于87%,且随着温度的升高,吸收边发生"红移",禁带宽度逐渐增加。 相似文献
12.
熔盐镀钨的历史与发展趋势 总被引:8,自引:1,他引:7
详细讨论了熔盐镀钨技术的发展。分卤化物,含氧酸盐及卤-氧混合物体系进行论述,并在此基础上提出了熔盐镀钨技术的发展趋势。 相似文献
13.
The Cu2ZnSnS4 (CZTS) powders are successfully synthesized by using ZnS and Cu2SnS3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere. The crystalline structure, morphology and optical properties of the CZTS powders are characterized by X-ray diffraction (XRD), Raman spectrum, field emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer, respectively. The results show that the band gap of the obtained CZTS is 1.53 eV. The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%. The photoelectrical properties of such CZTS films are measured, and the results show an incident light density of 100 mW.cm-2 with the bias voltage of 0.40 V, and the photocurrent density can approach 9.80×10-5 A.cm2within 50 s, giving an on/off switching ratio of 1.64. 相似文献
14.
Niobium-doped indium tin oxide(ITO:Nb)thin films are fabricated on glass substrates by radio frequency(RF)magnetron sputtering at different temperatures.Structural,electrical and optical properties of the films are investigated using X-ray diffraction(XRD),atomic force microscopy(AFM),ultraviolet-visible(UV-VIS)spectroscopy and electrical measurements.XRD patterns show that the preferential orientation of polycrystalline structure changes from(400)to(222)crystal plane,and the crystallite size increases with the increase of substrate temperature.AFM analyses reveal that the film is very smooth at low temperature.The root mean square(RMS)roughness and the average roughness are 2.16 nm and 1.64 nm,respectively.The obtained lowest resistivity of the films is 1.2×10-4?.cm,and the resistivity decreases with the increase of substrate temperature.The highest Hall mobility and carrier concentration are 16.5 cm2/V.s and 1.88×1021 cm-3,respectively.Band gap energy of the films depends on substrate temperature,which is varied from 3.49 eV to 3.63 eV. 相似文献
15.
论钛铁矿冶金的新发展 总被引:1,自引:0,他引:1
马瑞新 《稀有金属与硬质合金》1993,(4):51-54
对以钛铁矿为原料的各种冶金处理工艺作了系统的论述,阐明了各种处理工艺的相对优缺点及应用前景,并提出钛铁矿冶金工艺的发展趋势。 相似文献
17.
Chalcopyrite-type CulnSe2 nanoparticles are successfully prepared by using In2Se3 nanoparticles as a precursor reacted with copper chloride (CuCl) solution via a phase transformation process in low temperature. The reaction time is a key parameter. After the reaction time increasing from 0.5 h to 8 h, In2Se3 and CuCl react with each other gradually via phase transformation into CuInSe2 without any intermediate phase. The crystalline structure and morphology of the CuInSe2 nanoparticles are characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The diameter of CuInSe2 nanoparticles with good dispersibility ranges from 10 nm to 20 nm. The band gap of the CulnSe2 nanoparticles is 1.04 eV calculated from the ultraviolet-visible (UV-VIS) spectrum. 相似文献
18.
为了提高科技论文管理平台中学术信息资源的利用效率和个性化推荐的质量,深入介绍了社区挖掘算法在SNS科技论文管理平台中的应用,根据用户提供的个人信息以及发表的论文信息,构建树形关系结构,计算用户之间的相似程度;利用粒子群优化算法的思想寻找精英粒子,进行虚拟社区划分。通过确立社区主题和分析邻居用户的动态更新,对社区内的用户进行个性化推荐。实验结果表明,改进后的系统大大提高了个性化推荐的精度,增加了用户满意度。 相似文献
19.
用射频磁控溅射法制备了Al-F共掺杂ZnO(ZnO(Al,F))透明导电薄膜,研究了不同退火气氛对ZnO(Al,F)薄膜的结构、电学和光学特性的影响。结果表明:在真空和还原性气氛中退火后的薄膜透光率呈现"蓝移"趋势,在空气中退火处理后的薄膜透光率则表现为"红移";在真空中,400℃×60min的退火处理,使ZnO(Al,F)薄膜的电阻率降低至1.41×10-3Ω·cm,透光率则上升到93%以上,有效提高了薄膜的光电特性;所有退火气氛下,薄膜均具有(002)单一择优取向的多晶六方纤锌矿结构;薄膜的晶粒尺寸为25~30nm。 相似文献
20.
为了延长无线网络的生存时间,避免簇内过早的出现盲节点,提出了一种利用蚁群算法优化的DSR协议。在划分簇和选择簇头的研究过程中,动态追踪无线网络中节点的变化情况,分权衡量节点的移动速度和剩余能量,选择合适的簇首和稳定的信息传播半径,并根据信息传播半径的大小对传感器节点的地理位置进行虚拟网格划分,最终实现信息的稳定传输和能量的有效利用。仿真结果表明,与LEACH和CDSR协议相比,该算法不仅有效地提高了信息传输效率、均衡了网络节点的能量消耗、延长了网络寿命,并且有效增强了无线自组织网络的鲁棒性。 相似文献