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排序方式: 共有528条查询结果,搜索用时 31 毫秒
521.
Sotoudeh Matthew Tao Zhe Thakur Aditya V. 《International Journal on Software Tools for Technology Transfer (STTT)》2023,25(2):145-165
International Journal on Software Tools for Technology Transfer - Deep Neural Networks (DNNs) are rapidly gaining popularity in a variety of important domains. Unfortunately, modern DNNs have been... 相似文献
522.
Silicon - As the technology is scaled down, there is a need to find the alternatives for the Silicon dioxide materials. The high-K gate dielectric materials are one of such kind in nanoscale... 相似文献
523.
Aditya Ashok Tuan-Khoa Nguyen Matthew Barton Michael Leitch Mostafa Kamal Masud Hyeongyu Park Thanh-An Truong Yusuf Valentino Kaneti Hang Thu Ta Xiaopeng Li Kang Liang Thanh Nho Do Chun-Hui Wang Nam-Trung Nguyen Yusuke Yamauchi Hoang-Phuong Phan 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(9):2204946
Flexible and implantable electronics hold tremendous promises for advanced healthcare applications, especially for physiological neural recording and modulations. Key requirements in neural interfaces include miniature dimensions for spatial physiological mapping and low impedance for recognizing small biopotential signals. Herein, a bottom-up mesoporous formation technique and a top-down microlithography process are integrated to create flexible and low-impedance mesoporous gold (Au) electrodes for biosensing and bioimplant applications. The mesoporous architectures developed on a thin and soft polymeric substrate provide excellent mechanical flexibility and stable electrical characteristics capable of sustaining multiple bending cycles. The large surface areas formed within the mesoporous network allow for high current density transfer in standard electrolytes, highly suitable for biological sensing applications as demonstrated in glucose sensors with an excellent detection limit of 1.95 µm and high sensitivity of 6.1 mA cm−2 µM−1, which is approximately six times higher than that of benchmarking flat/non-porous films. The low impedance of less than 1 kΩ at 1 kHz in the as-synthesized mesoporous electrodes, along with their mechanical flexibility and durability, offer peripheral nerve recording functionalities that are successfully demonstrated in vivo. These features highlight the new possibilities of our novel flexible nanoarchitectonics for neuronal recording and modulation applications. 相似文献
524.
Sharma Sunny Palaniappan Karthik Mishra Vagish D. Vedantam Srikanth Murthy H. Rao Balkrishna C. 《Metallurgical and Materials Transactions A》2023,54(1):270-285
Metallurgical and Materials Transactions A - The characterization of Ni-based superalloy Inconel® 718 fabricated by powder-based laser fusion process was performed to study microstructural... 相似文献
525.
Sahu Aditya Kumar Sahu Monalisa Patro Pramoda Sahu Gupteswar Nayak Soumya Ranjan 《Pattern Analysis & Applications》2023,26(2):571-590
Pattern Analysis and Applications - This study proposes an efficient dual image-based reversible fragile watermarking scheme (DI-RFWS) that can accurately detect and locate the tampering regions... 相似文献
526.
Ayse Sünbül David Lehninger Raik Hoffmann Ricardo Olivo Aditya Prabhu Fred Schöne Kati Kühnel Moritz Döllgast Nora Haufe Lisa Roy Thomas Kämpfe Konrad Seidel Lukas M. Eng 《Advanced Engineering Materials》2023,25(4):2201124
Due to its ferroelectricity, hafnium oxide has attracted a lot of attention for ferroelectric memory devices. Amongst different dopant elements, zirconium is found to be beneficial due to the relatively low crystallization temperature of hafnium-zirconium-oxide (HZO), thus it is back-end-of-line (BEoL) compatible. The thickness of HZO has a significant impact on ferroelectric device reliability. High operation temperatures and high endurance are important criteria depending on the application. Herein, various HZO thicknesses (7, 8, and 10 nm) in MFM (metal-ferroelectric-metal) capacitors are investigated at varying operation temperatures (25 to 175 °C) at varying electric fields (±3 to ±5.4 MV cm−1) with respect to polarization, leakage current, endurance, and retention. 7 nm HZO showed promising results with an endurance of 107 cycles, with a low leakage current density, and almost no retention loss after 10 years. Extrapolated results at operation conditions (±2 MV cm−1 and 10 MHz) showed an endurance of 1010 cycles. 相似文献
527.
Mixed Matrix Membranes (MMMs) of UiO-66-NH2 nanoparticles dispersed in Cellulose Acetate (CA) were prepared with filler loading of 2–20 wt%. MMMs were tested for the upgradation of model biogas (60%–40%) mixture of CH4/CO2 at a feed pressure of 2 bar and 1.5 bar. Detailed characterization of MMMs was performed with Fourier transform infrared spectroscopy (FTIR), Thermo-gravimetric analysis (TGA), Differential scanning calorimetry (DSC), and Field emission scanning electron microscopy (FESEM) to investigate the physical and thermal properties. MMMs formed are defects-free, voids-free, and without polymer rigidification, indicating a better filler polymer interface. MMMs showed improved CO2 permeability while retaining the CO2/CH4 selectivity. The 10 wt.% UiO-66-NH2/CA MMM showed optimum gas separation performance with CO2 permeability of 11 Barrer and CO2/CH4 selectivity of 10. The UiO-66-NH2/CA MMMs performed better when compared to the pure CA membrane. The experimental permeability and selectivity data were compared with the predicted data using Maxwell, Lewis–Nielsen, Higuchi, and Bruggeman's model. 相似文献
528.
Thanh-An Truong Tuan Khoa Nguyen Xinghao Huang Aditya Ashok Sharda Yadav Yoonseok Park Mai Thanh Thai Nhat-Khuong Nguyen Hedieh Fallahi Shuhua Peng Sima Dimitrijev Yi-Chin Toh Yusuke Yamauchi Chun Hui Wang Nigel Hamilton Lovell John A. Rogers Thanh Nho Do Nam-Trung Nguyen Hangbo Zhao Hoang-Phuong Phan 《Advanced functional materials》2023,33(34):2211781
Wide bandgap (WBG) semiconductors have attracted significant research interest for the development of a broad range of flexible electronic applications, including wearable sensors, soft logical circuits, and long-term implanted neuromodulators. Conventionally, these materials are grown on standard silicon substrates, and then transferred onto soft polymers using mechanical stamping processes. This technique can retain the excellent electrical properties of wide bandgap materials after transfer and enables flexibility; however, most devices are constrained by 2D configurations that exhibit limited mechanical stretchability and morphologies compared with 3D biological systems. Herein, a stamping-free micromachining process is presented to realize, for the first time, 3D flexible and stretchable wide bandgap electronics. The approach applies photolithography on both sides of free-standing nanomembranes, which enables the formation of flexible architectures directly on standard silicon wafers to tailor the optical transparency and mechanical properties of the material. Subsequent detachment of the flexible devices from the support substrate and controlled mechanical buckling transforms the 2D precursors of wide band gap semiconductors into complex 3D mesoscale structures. The ability to fabricate wide band gap materials with 3D architectures that offer device-level stretchability combined with their multi-modal sensing capability will greatly facilitate the establishment of advanced 3D bio-electronics interfaces. 相似文献