Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.     

Nonnegative solutions of singular boundary value problems with sign changing nonlinearities

The paper presents sufficient conditions for the existence of positive solutions of the equation x″(t) + q(t)f(t,x(t),x′(t)) = 0 with the Dirichlet conditions x(0) = 0, x(1) = 0 and of the equation (p(t)x′(t))′ + p(t)q(t)f(t,x(t),p(t)x′(t)) = 0 with the boundary conditions lim_t→o⁺ p(t)x′(t) = 0, x(1) = 0. Our nonlinearity f is allowed to change sign and f may be singular at x = 0. The proofs are based on a combination of the regularity and sequential techniques and the method of lower and upper functions.     

Managing Team Interpersonal Processes Through Technology: A Task-Technology Fit Perspective.

This article addresses the broad question, How can virtual teams that manage a majority of their interactions through information and communication technologies (ICTs) be made more effective? Focusing specifically on interpersonal interactions, the task-technology fit paradigm is used as the foundation for a theoretical model that seeks to identify how such teams can match available communication technologies to the different types of interpersonal interactions in which they engage. The authors draw on media synchronicity theory to identify the functionalities of the wide range of ICTs available today, and map these functionalities onto the salient communication needs of 3 key interpersonal processes: (a) conflict management, (b) motivation and confidence building, and (c) affect management. The model also incorporates a temporal dimension examining how the communication needs, and hence, the need for ICT functionality, varies depending on the virtual team's developmental stage. Opportunities for future research arising from the theoretical model are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

The effect of moisture on the mechanical behavior of a nylon-epoxy adhesive

The mechanical properties of a commercial nylon-epoxy resin have been studied using a sensitive creep apparatus which employs a frictionless levitation magnetic bearing. Isothermal creep measurements over a temperature range of 30-170°C and covering a time scale of five decades were made on the wet and dry state of the material. Following the usual time-temperature reduction scheme, master curves for each state were constructed from the experimental data. The effect of moisture was found to be more than that of a simple plasticizer. The steepness of the reduced curves in the transition region was determined and the distribution function of retardation times of the two states of the sample were calculated. The problem of predicting the physical state of the bulk adhesive at higher temperatures was found to be complicated, possibly due to the presence of nylon crystallites.     

NU-Iron,A Fluidized-Bed Reduction Process

In pilot-plant tests, U.S. Steel Corp. has shown that its two-stage iron-ore reduction process utilizing hydrogen is technically feasible. A 2000-tpd commercial unit has been designed, but economic considerations have delayed construction.     

Dislocation loops in tungstenite (WS2) crystals

TEM studies of tungstenite crystals grown by sublimation method have been investigated. Dislocation loops observed during such studies have been reported. It has been shown by different methods that these loops have a vacancy character.     

Determination of minority carrier lifetime and effective back surface recombination velocity in BSF silicon solar cells from transient measurements

The method of determining the base lifetime ?B and the effective surface recombination velocity Seff in a BSF solar cell from the transient decay of open-circuit voltage and short-circuit current is extended to include emitter recombinations. If the emitter recombinations in modern Si solar cells are neglected in interpreting the experimental data, the experimental value of Seff is found to be in large error.