Kinetics and mechanism of oligomerization of cardanol using acid catalysts

The kinetics and mechanism of oligomerization of cardanol over acid catalysts were studied. GPC results showed the formation of a mixture of oligomers such as dimer, trimer, tetramer, etc. IR spectra of the products of oligomerization showed a decrease in the intensity of the double bond absorption band at 1630 cm^?1 and the disappearance of terminal vinyl bands at 895 cm^?1 and 907 cm^?1. ¹H NMR spectra showed drastic changes in the unsaturated proton resonance signals at 5.5δ with respect to saturated protons at 0.2–2.5δ. The ratio of resonance integrals of unsaturated to saturated protons decreased from 1 : 6.5 to 1 : 20 after oligomerization. GPC studies showed that the rate of formation of the dimer, trimer, tetramer, etc. follow an identical path and that the individual oligomers are formed in the same weight percentage at any time during the reaction. A kinetic scheme is proposed to explain this phenomenon. Kinetic studies showed that the oligomerization reaction follows first order kinetics with respect to the monomer concentration and the rate constant is K = 6.6 × 10^?5s^?1. A probable mechanism for the oligomerization of cardanol is proposed.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Experience with Applying Formal Methods to Protocol Specification and System Architecture

In the last three years or so we at Enterprise Platforms Group at Intel Corporation have been applying formal methods to various problems that arose during the process of defining platform architectures for Intel's processor families. In this paper we give an overview of some of the problems we have worked on, the results we have obtained, and the lessons we have learned. The last topic is addressed mainly from the perspective of platform architects.     

On the improvement of detection characteristics of trans-stilbene crystals by improving crystal perfection

Organic molecular scintillating crystals are noted for their good timing and particle discrimination process. Trans-stilbene is one such candidate noted for its good particle detection characteristics for the past five decades. Progressive strengthening of detection characteristics of trans-stilbene has been attempted by improving crystal perfection. A series of timing resolution studies have been carried out for the Bridgman grown trans-stilbene crystals under different experimental conditions. The results were compared with the previously reported values. Pulse shape discrimination process has been carried out for ²⁴¹Am and ²⁵²Cf sources and good discrimination has been obtained for gamma-alpha and gamma-neutron sources from the grown organic phosphor crystal. Electronic Publication     

Development of nano indium tin oxide (ITO) grains by alkaline hydrolysis of In(III) and Sn(IV) salts

Indium tin oxide (ITO) nano powders of different compositions (In: Sn = 90: 10, 70: 30 and 50: 50) were prepared by heat treatment (300-450°C) of mixed hydroxides of In(III) and Sn(IV). The hydroxides were obtained by the reaction of aq. NH₃ with mixed aq. solutions of In(NO₃)₃ and SnCl₄. FTIR and TG/DTA studies revealed that powders existed as In(OH)₃H₂O—SnO₃H₂H₂O in the solid state and then they transformed to In₂O₃—SnO₂ via some metastable intermediates after 300°C. Cubic phase of In₂O₃ was identified by XRD for the oxides up to 30% of Sn. Particle size measurements of the solid dispersed in acetone and SEM study for microstructure showed that the oxides were in the nano range (55-75 nm) whereas the size range determined from Debye-Scherrer equation were 11–24 nm.     

Stability and throughput analysis of unslotted CDMA‐ALOHA with finite number of users and code sharing

We consider a system comprising a finite number of nodes, with infinite packet buffers, that use unslotted ALOHA with Code Division Multiple Access (CDMA) to share a channel for transmitting packetised data. We propose a simple model for packet transmission and retransmission at each node, and show that saturation throughput in this model yields a sufficient condition for the stability of the packet buffers; we interpret this as the capacity of the access method. We calculate and compare the capacities of CDMA‐ALOHA (with and without code sharing) and TDMA‐ALOHA; we also consider carrier sensing and collision detection versions of these protocols. In each case, saturation throughput can be obtained via analysis of a continuous time Markov chain. Our results show how saturation throughput degrades with code‐sharing. Finally, we also present some simulation results for mean packet delay. Our work is motivated by optical CDMA in which “chips” can be optically generated, and hence the achievable chip rate can exceed the achievable TDMA bit rate which is limited by electronics. Code sharing may be useful in the optical CDMA context as it reduces the number of optical correlators at the receivers. Our throughput results help to quantify by how much the CDMA chip rate should exceed the TDMA bit rate so that CDMA‐ALOHA yields better capacity than TDMA‐ALOHA. This revised version was published online in June 2006 with corrections to the Cover Date.     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted