面向医院建筑项目的IPD模式应用研究

医院建筑项目是非常复杂且具有挑战性的建设项目。传统的交付模式无法满足人们对医院建筑建设、运营方面的高要求,为此开展面向医院建筑项目的IPD模式应用研究。在对IPD模式发展现状整理的基础上,阐述医院建筑项目IPD模式的适用性。分析采用IPD模式的医院建筑项目特点,并以上海市某公立三甲专科医院项目为例,对IPD模式在国内的应用进行探索性研究。     

基于小角度高位技术的钻孔初采期瓦斯治理

回采工作面初采期瓦斯涌出不均衡,易出现瓦斯超限现象。针对新源煤矿近距离煤层群开采、瓦斯涌出量大等特点,提出了小角度高位钻孔抽采治理初采期瓦斯的方法;2219工作面应用实践表明,初采期内,小角度高位钻孔抽采瓦斯纯量最高5.25m3/min,瓦斯抽采率64.02%,回风流瓦斯浓度最高为0.32%,上隅角最高瓦斯浓度0.96%,未出现瓦斯超限现象,取得了很好的初采期瓦斯治理效果。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Mesoporous g-C3N4 decorated by Ni2P nanoparticles and CdS nanorods together for enhancing photocatalytic hydrogen evolution

Ni₂P nanoparticles and CdS nanorods were grew together on a mesoporous g-C₃N₄ through a facile in-situ solvothermal approach. Under visible light (λ > 400 nm), the as-prepared ternary PCN–CdS-5% Ni₂P composite displays a high H₂ evolution rate with 2905.86 μmol g^?1 h^?1, which is about 14, 18 and 279 times that of PCN–CdS, PCN–Ni₂P and PCN, respectively. The enhanced photocatalytic activity is mainly attributed to the improved separation efficiency of the photocarriers by the type II PCN–CdS heterojunction and the effective extraction of photogenerated electrons by Ni₂P. Meanwhile, Ni₂P acts as co-catalyst to provide the photocatalytic active site for hydrogen reduction. In addition, PCN–CdS-5% Ni₂P composite exerts good stability in 12-h cycles.     

基于DSP的智能电源控制单元设计与实现

本文利用TI公司TMS320F28335芯片高效的浮点运算能力,结合片上丰富的外设,设计并实现了一种具有高可靠性的智能电源控制单元。该控制单元周期性地对各片上外设进行自检维护,完成多路负载通道控制、电压、电流的实时监控,并对故障进行指示、处理和上报,同时提供人机交互界面更新状态信息。经过验证,该控制单元工作稳定,具备良好的工程应用价值。     

Viscoplastic behavior of AA7075 aluminum alloy at high strain rate

Journal of Mechanical Science and Technology - The flow stress increases with the increase in strain rate. This phenomenon is the strain rate effect of plastic deformation. Hopkinson experiment...     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

9000m顶部驱动钻井装置结构选型研究

为大幅提高钻井效率,针对9 000 m钻井深度对顶驱的设计要求,通过比较顶驱装置关键部分几种典型的结构,提出适合该型号顶部驱动钻井装置的最优结构形式,为后续9 000 m钻井深度顶部驱动钻井装置的研究提供指导和借鉴。     

双馈风机低电压穿越的改进技术

为提高电压跌落条件下双馈风电机组的运行稳定性,介绍了crowbar与chopper共同配合作用的低电压穿越技术,并从提高crowbar阻值整定上限这一角度通过理论分析与仿真验证说明了crowbar与chopper配合作用的优势。提出低电压穿越过程中机侧变流器的无扰切换控制方法,通过仿真验证了这种方法可以大大减少crowbar投切次数与低穿过渡时间,且控制简单可行。