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141.
A MOSFET structure with a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the spacer induces an inversion layer in the nonoverlap region to act as an extended S/D region. An oxide spacer is used to reduce parasitic gate overlap capacitance. A reasonable amount of inversion electrons were induced under the spacers. Internal physics, speed characteristics, short channel effects, and RF characteristics were studied with the nonoverlap distance at a fixed metallurgical channel length of 40 nm. The proposed structure had good drain-induced barrier lowering and V/sub T/ rolloff characteristics and showed reasonable intrinsic gate delay and cutoff frequency compared to those of an overlapped structure. 相似文献
142.
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144.
Spectral characteristics of vertical-cavity surface-emitting lasers with external optical feedback 总被引:4,自引:0,他引:4
Y.C. Chung Y.H. Lee 《Photonics Technology Letters, IEEE》1991,3(7):597-599
The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<> 相似文献
145.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
146.
Sang-Hoon Lee Dae Hwan Kim Kyung Rok Kim Jong Duk Lee Byung-Gook Park Young-Jin Gu Gi-Young Yang Jeong-Taek Kong 《Nanotechnology, IEEE Transactions on》2002,1(4):226-232
A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures. 相似文献
147.
148.
WS Ahn J Yoo SW Huh CK Kim JM Lee SE Namkoong SM Bae IP Lee 《Canadian Metallurgical Quarterly》2003,12(5):383-390
We investigated clinical efficacy of green tea extracts (polyphenon E; poly E and (-)-epigallocatechin-3-gallate [EGCG]) delivered in a form of ointment or capsule in patients with human papilloma virus (HPV) infected cervical lesions. Fifty-one patients with cervical lesions (chronic cervicitis, mild dysplasia, moderate dysplasia and severe dysplasia) were divided into four groups, as compared with 39 untreated patients as a control. Poly E ointment was applied locally to 27 patients twice a week. For oral delivery, a 200 mg of poly E or EGCG capsule was taken orally every day for eight to 12 weeks. In the study, 20 out of 27 patients (74%) under poly E ointment therapy showed a response. Six out of eight patients under poly E ointment plus poly E capsule therapy (75%) showed a response, and three out of six patients (50%) under poly E capsule therapy showed a response. Six out of 10 patients (60%) under EGCG capsule therapy showed a response. Overall, a 69% response rate (35/51) was noted for treatment with green tea extracts, as compared with a 10% response rate (4/39) in untreated controls (P<0.05). Thus, the data collected here demonstrated that green tea extracts in a form of ointment and capsule are effective for treating cervical lesions, suggesting that green tea extracts can be a potential therapy regimen for patients with HPV infected cervical lesions. 相似文献
149.
R Albrecht TC Awes C Baktash P Beckmann F Berger R Bock G Claesson G Clewing L Dragon A Eklund RL Ferguson A Franz S Garpman R Glasow HA Gustafsson HH Gutbrod J Idh P Jacobs K Kampert BW Kolb P Kristiansson IY Lee H Loehner I Lund FE Obenshain A Oskarsson I Otterlund T Peitzmann S Persson F Plasil AM Poskanzer M Purschke H Ritter S Saini R Santo HR Schmidt T Siemiarczuk SP Sorensen E Stenlund ML Tincknell GR Young 《Canadian Metallurgical Quarterly》1991,44(6):2736-2752
150.
Lasers (e.g. Nd-YAG) have been used extensively for groove formation both in laboratories and commercial production but the initial capital cost is high. The production throughput is also low and thus adds to the cost of the cell. To reduce cost and increase production throughput a drafting plotter has been adapted to serve as a mechanical scriber for groove formation. The adapted plotter can scribe cells in matrix form to reduce the human labour and increase the production throughput. The characterization of the scribing tips in conjunction with the plotter showed that the best yield for the scriber is obtained when the scribing tip is mounted at 78° to the stock. Of the seven characterized scribing tips, the 90° conical scriber has been found to give the same groove geometry as the laser. The application of the adapted plotter to cell fabrication did not show any significant deterioration in the electrical output parameters for the mechanically scribed cells when compared with laser scribed cells. This article reports the adaptation of the x-y table drafting plotter to form buried contact grooves. 相似文献