Design model and guidelines for n-well guard ring in epitaxial CMOS

This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guidelines have been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from the guard ring     

InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistorsgrown by chemical beam epitaxy

InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In_0.75Ga_0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz     

Load-capacity interference and the bathtub curve

Load-capacity (stress-strength) interference theory is used to derive a heuristic failure rate for an item subjected to repetitive loading which is Poisson distributed in time. Numerical calculations are performed using Gaussian distributions in load and capacity. Infant mortality, constant failure rate (Poisson failures), and aging are shown to be associated with capacity variability, load variability, and capacity deterioration, respectively. Bathtub-shaped failure rate curves are obtained when all three failure types are present. Changes in load or capacity distribution parameters often strongly affect the quantitative behavior of the failure-rate curves, but they do not affect the qualitative behavior of the bathtub curve. Neither is it likely that the qualitative behavior will be affected by the use of nonGaussian distributions. The numerical results, however, indicate that infant mortality and wear-out failures interact strongly with load variability. Thus bathtub curves arising from this model cannot be represented as simple superpositions of independent contributions from the three failure types. Only if the three failure types arise from independent failure mechanisms or in different components is it legitimate simply to sum the failure rate contributions     

Two's complement quantization in orthogonal biquad digital filters

A special class of complex biquad digital filters called orthogonal filters are investigated for stability under two's complement quantization. A sufficient condition is derived for the asymptotic stability of the nonlinear filter. Bounds on the possible limit cycles are also obtained. Using these bounds, any given filter can be tested for stability. The stability triangle is then scanned using a dense grid, and each point on the grid is tested for stability/limit cycles. By this method, the stability region given by the sufficient condition is extended. Regions within the linear stability triangle where various types of limit cycles are possible are also identified.     

毫米波谐波振荡器的Volterra级数分析法

本文基于Ｖｏｌｔｅｒｒａ级数法和非线性转移函数理论，提出了一种分析毫米波谐波振荡器的新方法，给出了描述其非线性特性的决定方程，通过求解一组非线性代数方程，便可计算出谐波振荡器的振荡频率和幅度。文中给出了具体分析实例，并与谐波平衡法等进行了比较，结果表明：这种方法具有理论严密、准确性高、适用范围广等特点，特别是利用一次决定方程的结果作为其它非线性数值分析方法的初始估值，则可大大地节约计算时间，并容易     

Design considerations for Rowland circle gratings used in photonicintegrated devices for WDM applications

Design issues of photonic integrated devices for WDM applications based on Rowland circle gratings have been studied. Effects of grating period, diffraction order, grating aperture (size), and Rowland circle size on device performance are discussed. The point spread function of a typical Rowland circle grating is evaluated numerically which yields an optical image (spot) size of several microns in diameter. Our study shows that there is a tradeoff between channel dispersion and feedback efficiency in choosing the grating period when a Rowland circle grating is used as the wavelength-selective element for a parallel-waveguide-type wavelength division multiplexing device     

Performance and reliability enhancement for CVD tungsten polycidedCMOS transistors due to fluorine incorporation in the gate oxide

The impacts of CVD tungsten polycide (WSi_x) on MOSFET performance and reliability are studied in this letter. The WSi_x process is shown to enhance the S/D lateral extent for both N- and P-channel devices via C_GD and L_eff measurements, confirming previous suspicion. This enhanced S/D extent is found to be easily modulated by drain-to-gate bias, which is favorable for achieving both higher drive currents and higher S/D punch-through voltages than those of non-WSi_x devices. Both electron and hole mobility for the WSi_x device are also slightly higher and closer to the published data compared to the non-WSi_x case. These effects together yield about >5% improvement for nMOSFET and >10% improvement for pMOSFET in drive current at a given punch-through voltage. The channel hot-electron lifetime for the n-channel WSi_x device is about 10 times higher than that of the non-WSi_x one. These enhancements in both performance and reliability make the WSi_x device very attractive fog VLSI CMOS technologies     

加入WTO对我国水利科技工作的影响及对策

加入WTO后，对我国水利科技发展的影响主要表现在：研究开发活动、技术标准和知识产权保护方面，为适应WTO的各项规则，履行我国政府所作出的承诺，必须调整水利科技政策和发展战略，促进我国水利科技事业的健康发展。     

Corticofugal regulation of auditory sensitivity in the bat inferior colliculus

Risk factors for severe acute asthma involve the patient, the environment and the society in general. In addition, there are strong interrelationships between these factors. Personal characteristics linked to acute severe asthma include age (teenagers), denial leading to poor compliance, depression with atypical symptoms in children, and some medical features of asthma associated with increased severity. Environmental factors include airborne allergens, infections, irritants such as air pollutants and passive smoking. Life events have not been extensively studied but are likely to play a predominant role. The social setting, particularly the health care system, acts as an interface between the patient and the environment. Most all asthma deaths are avoidable and related to dysfunctions in the health care system.     

激光远距作用的机制与效应

本文定量分析激光远距作用的机理并对它们在治癌中的作用作简要的论述。