反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

一种速度优化的流水线模数转换电容误差平均技术

无源电容误差平均技术是一种本质线性(Inherently Linear)的流水线模数转换电容失配校准技术,但其转换速度是传统技术的一半.为了提高速度,本文提出了一种改进的电容误差平均技术.该技术从减少一个转换周期所需的时钟相数目和减少每个时钟相的时间两个方面来优化速度.电路分析和MATLAB仿真表明,在两种典型的情况下,改进的技术能将速度提高52%(跨导放大器为开关电容共模反馈)和64%(跨导放大器为非开关电容共模反馈)以上.改进的技术更适用于高速高精度及连续工作的应用场合.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

An efficient optimistic message logging scheme for recoverable mobile computing systems

A number of checkpointing and message logging algorithms have been proposed to support fault tolerance of mobile computing systems. However, little attention has been paid to the optimistic message logging scheme. Optimistic logging has a lower failure-free operation cost compared to other logging schemes. It also has a lower failure recovery cost compared to the checkpointing schemes. This paper presents an efficient scheme to implement optimistic logging for the mobile computing environment. In the proposed scheme, the task of logging is assigned to the mobile support station so that volatile logging can be utilized. In addition, to reduce the message overhead, the mobile support station takes care of dependency tracking and the potential dependency between mobile hosts is inferred from the dependency between mobile support stations. The performance of the proposed scheme is evaluated by an extensive simulation study. The results show that the proposed scheme requires a small failure-free overhead and the cost of unnecessary rollback caused by the imprecise dependency is adjustable by properly selecting the logging frequency.     

D-AKAP2, a novel protein kinase A anchoring protein with a putative RGS domain

Subcellular localization directed by specific A kinase anchoring proteins (AKAPs) is a mechanism for compartmentalization of cAMP-dependent protein kinase (PKA). Using a two-hybrid screen, a novel AKAP was isolated. Because it interacts with both the type I and type II regulatory subunits, it was defined as a dual specific AKAP or D-AKAP1. Here we report the cloning and characterization of another novel cDNA isolated from that screen. This new member of the D-AKAP family, D-AKAP2, also binds both types of regulatory subunits. A message of 5 kb pairs was detected for D-AKAP2 in all embryonic stages and in all adult tissues tested. In brain, skeletal muscle, kidney, and testis, a 10-kb mRNA was identified. In testis, several small mRNAs were observed. Therefore, D-AKAP2 represents a novel family of proteins. cDNA cloning from a mouse testis library identified the full length D-AKAP2. It is composed of 372 amino acids which includes the R binding fragment, residues 333-372, at its C-terminus. Based on coprecipitation assays, the R binding domain interacts with the N-terminal dimerization domain of RIalpha and RIIalpha. A putative RGS domain was identified near the N-terminal region of D-AKAP2. The presence of this domain raises the intriguing possibility that D-AKAP2 may interact with a Galpha protein thus providing a link between the signaling machinery at the plasma membrane and the downstream kinase.     

p53 gene therapy in vivo of herpatocellular and liver metastatic colorectal cancer

Tumor suppressor genes such as p53 contribute to the oncogenic process via loss-of-function mechanisms such as genetic mutation or complex formation with other cellular or viral proteins. p53 is mutated in approximately 50% of human tumors and has an important role in the genesis or progression of both colorectal and hepatocellular cancers. Colorectal cancer is leading cause of cancer mortality in the United States, whereas hepatocellular cancer is the leading worldwide cause of cancer death; the liver is a primary site of morbidity in both diseases. Because systemic tumor suppressor gene therapy is currently not feasible, we have chosen to develop a regional form of such therapy directed at primary or metastatic liver neoplasms. Gene replacement therapy with p53 is a promising new strategy to treat advanced human cancers.     

微生物烟气脱硫技术及其研究方向

微生物烟气脱硫 ,是用含有脱硫菌的溶液作循环吸收液、以粉煤灰中Fe2 O3被离子化后产生的铁离子作催化剂和反应介质、以脱除烟气中SO2 的一项新技术 .从能源、酸度、温度、需氧类型等方面综合考虑 ,氧化亚铁硫杆菌、氧化硫硫杆菌、氧化亚铁硫螺菌可作为三层滤料生物滤池脱硫的菌种 .而选育适宜性和稳定性更强、使用寿命更长的高效菌和合适的生化反应器 ,是脱硫菌种研究的趋势 .     

Multiple-gate SOI MOSFETs: device design guidelines

This paper describes computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced. The Pi-gate device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. The simulation results indicate that the the Pi-gate device is a very promising candidate for future nanometer MOSFET applications.     

Structural evaluation of thermal stratification for PWR surge line

Recent observations at operating plants and subsequent US NRC requirements have identified flow stratification in surge lines as a phenomenon that must be considered in the design basis of surge lines. To address these concerns, the stratified loading conditions were included in the design of YGN 3 and 4 surge line as a design basis transient and pipe temperature and displacement measurement were taken during YGN 3 pre-core hot functional testing to determine the degree of surge line flow stratification. The measured displacements and temperatures were extensively reviewed and evaluated in detail: (1) to verify the validity of the thermal hydraulic model used to predict the pipe top-to-bottom temperature differentials; (2) to analytically correlate measured surge line temperatures and displacements; and (3) to confirm the validity of the stratified flow analysis procedure. This paper shows that the stratified flow phenomenon is generic and therefore generic loadings can be developed and evaluated for the surge line analyses.     

C-t analysis of MOS capacitors under constant current stress

The effect of high oxide field stress is studied using capacitance-time (C-t) measurements of MOS capacitors. The stress results in parallel shifts of the C-t curve along the time axis. The flatband voltage shift ΔV_FB obtained from the initial deep depletion capacitance C(t=0⁺) follows the same trend as that from the high-frequency C-V characteristics. However, the discrepancy between the two flatband voltages becomes larger as the stress increases due to the effect of interface charges on C-t characteristics. The flatband voltage difference is converted to interface trap density, showing a steady increase of interface trap density with stress, similar to that from low-frequency C-V measurements