掺杂对低压ZnO压敏陶瓷材料显微结构及性能的影响

本文探讨了多种金属氧化物对ＺｎＯ－Ｂｉ＿２Ｏ＿３－ＴｉＯ＿２系材料的改性作用和对其微结构的影响，为得到预定性能的材料提供了掺杂方面的实验依据。     

Decision-directed maximum-likelihood estimation of OFDM framesynchronisation offset

The authors propose a method to estimate the synchronisation offset for orthogonal frequency division multiplexing (OFDM) frame alignment without resort to pilot tones. A decision-directed maximum-likelihood estimation of frame synchronisation offset is derived, and the performance of the proposed scheme is confirmed by computer simulation for QAM systems     

钒冶炼焙烧添加剂选择研究

对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨，研究了几种常用添加剂的焙烧条件，分析比较了其性能，提出用ＮａＣｌ－Ｎａ２ＣＯ３作焙烧添加剂替代ＮａＣｌ可大幅度减少大气污染，提高冶钒转化率；且不改变工艺流程，无需设备投资，具有较好的经济效益和环境效益。     

Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application

Comparing with a lumped electroabsorption modulator (EAM), we show the merits of a long EAM with traveling-wave electrode with high radio-frequency (RF) gain that could be used in high-frequency analog application. By terminating the RF output port with the characteristic impedance of 30 /spl Omega/, the device exhibited a large enhancement of 6 dB above 10 GHz in the electrical-to-optical response and a wide fractional bandwidth as estimated from simulation. In addition, an input impedance matching circuit of stub embedded on the device chip was found to be very effective for improving RF characteristics in the narrow band of frequency.     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO2 for no reduction by NH3

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO₂ for NO reduction by NH₃ was examined in a fixed-bed flow reactor. The deactivation of the catalyst was strongly dependent on reaction temperature. At high reaction temperatures over 300°C, the catalyst did not lose its initial activity up to 50 h of operation, regardless of SO₂ feed concentration from 500 to 20,000 ppm. However, at low reaction temperatures near 250°C, apparent deactivation did occur. Changes in the physicochemical properties such as surface area and sulfur content of deactivated catalyst well correlated with catalyst activity, depending upon reaction temperatures. The deactivation was due to pore blocking and/or filling by deactivating agents, which plugged and/or filled the pores of catalyst. The deactivating agents deposited on the catalyst surface were presumed to be (NH₄)₂SO₄ and/or (NH₄)HSO₄ from the results of TGA and ion-chromatography measurement.     

A finite element analysis of damage propagation during metal forming process

In this paper damage propagation during metal forming process is investigated with the concept of continuum damage mechanics. An isotropic damage model based on the theory of materials of type N is adopted to describe the damage process of a ductile material with large elasto-viscoplastic deformation. To solve the finite elasto-viscoplasticity problem, a reasonable kinematic strain measure for largely deformed solids is used and the damage constitutive equations based on thermodynamical framework are developed. The stiffness degradation of the loaded material is chosen as a damage measure. An extended interior penalty method is used to impose the contact condition on the boundary. The highly nonlinear equilibrium equations are reduced to the incremental weak form and approximated by the total Lagrangian finite element method. The displacement control method along with the modified Riks' continuation technique based on displacement parameter is used to solve the incremental iterative equations. As numerical examples, upsetting, backward extrusion and punch problems are simulated and the results of damage propagation and J₂ stress contours with and without damage are presented. For punch problems, spring back and residual stresses are also presented.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.