Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

Microstructure and fatigue characteristics of direct chill cast and electromagnetic cast 2024 Al alloy ingots

The distinct advantages of the electromagnetic casting (EMC) process consist in the presence of stirring motions in the melt, which lead to significant grain size reduction in solidified ingot. Furthermore, surface and subsurface qualities are improved due to the absence of ingot mold. However, it is impossible to achieve the aforementioned advantages in conventional direct chill casting (DCC). In order to contrast the before and after heat treatments of the microstructural and mechanical characteristics of EMC and DCC 2024 aluminium alloys, optical microscopy, scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffractions (XRD), differential scanning calorimetry (DSC), etc. were carried out. Compared with the DCC ingot, the EMC ingot has better mechanical properties not only in the ascast condition but also in the as-aged condition. The DSC curves show that the EMC specimens have high enthalpy, i.e., the thermal kinetic energy to form precipitates during the aging treatment process. Despite heat treatments applied to the DCC ingot, it fails to attain the same mechanical properties as the EMC ingot. Moreover, considering the expernsive scalping operation for DCC ingots, the EMC technique, which offers a lower manufacturing cost, is one of the best manufacturing methods used in obtaining the ingots of wrought aluminum alloys.     

Effects of reducing and oxidizing atmospheres on the PTCR characteristics of porous n-BaTiO3 ceramics by adding polyethylene glycol

Donor doped BaTiO₃ (n-BaTiO₃) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO₃ ceramics were investigated. The PTCR characteristics of the porous n-BaTiO₃ ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO₃ ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO₃ ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

Influence of aggregate content on the migration coefficient of concrete materials using electrochemical method

In order to investigate the effect of coarse aggregate content on the chloride ion migration coefficient of concrete, specimens with different coarse aggregate volume fractions and two water/cement (w/c) ratios of mortar matrix were used. The chloride ion migration coefficient of concrete is obtained using the electrochemical technique to accelerate chloride ion migration in cement-based material and the experimental results were plotted as a function of the fine aggregate volume fraction. The results are analyzed comparing experimental results and theoretical models that represent the concretes as three-phase composite materials. The three phases are the mortar matrix, the coarse aggregate, and the interfacial transition zone between the two. The chloride ion migration coefficient is used to assess the dilution, tortuosity, interfacial transition zone (ITZ) and, percolation effects of coarse aggregate in concrete. It appears that the dilution and tortuosity effects are a dominant factor affecting the chloride ion migration coefficient of concrete in the low volume fraction of coarse aggregate. As the volume fraction of coarse aggregate increases to 40 and 20% in concrete of w/c ratio 0.35 and 0.45, respectively, the ITZ with percolation effects are significantly.     

Robust Space Time Receiver for CDMA-based Antenna Arrays

In this paper, we propose a new robust code division multiple access (CDMA) receiver of which weight vector is obtained by projecting the effective spatio-temporal signature waveform onto the signal subspace of the data covariance matrix. We verified our proposed algorithm by the field measured data obtained with a custom-built wideband CDMA test-bed. It will be shown that the proposed algorithm is robust to the signal mismatch.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

Multi-level simulation of metal-forming processes

The IBF has for some years made use of finite element programmes to solve metal-forming problems. In the course of this investigation, it has become evident that a problem-oriented adaptation of FEM simulation to the problem in hand is beneficial in terms of computation effort. The computation time for the process parameters is optimised in a multi-level simulation. At level 1 (global analysis) integral parameters such as the required force and required work are computed using a coarse FEM mesh. At level 2 (local analysis) an optimised number of elements is used to determine continuum mechanics parameters like stress, strain and temperature. Microscopic phenomena are simulated at level 3 (microscopic analysis), using special micro-material elements and thermodynamic models.     

A typed functional extension of logic programming

A logic language is suitable for specification if it is equipped with features for data abstraction and modularization. In this paper, an effective mechanism to incorporate function and type into logic programming is presented as the means to embed data abstraction mechanism into logic programming. This incorporation is essentially based on Horn clause logic with equality and a polymorphic type system that is an extension of Mycroft and O’Keefe’s system. This paper also presents an implementation based on Warren Abstract Machine (WAM) and shows the performance, along with a comparison with WAM.