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41.
Susceptibility of the steel for further cold processing strongly depends on the whole prior history of deformation in the hot working regime.In the industrial hot working processes,e.g.at the roughing stage of hot rolling,or forging,material undergoes complex deformation modes that leads to gradients of both microstructure and properties across the deformed cross-section.Torsion and multiaxial compression tests with different amounts of strain reversals were conducted at elevated temperatures to study the effect of applied strain path on the phenomena occurring during microstructure evolution of Nb-microalloyed steels.Gathered results will provide data for the modification of existing constitutive equations that mostly do not account for the strain path changes.Better through-process modelling will then enable to achieve better properties and quality of the products for further cold processing. 相似文献
42.
MgO-Y2O3 nanostructured composite powder (volume ratio of 50:50) was synthesized by a sol-gel combustion process which generated crystal sizes in the 10-20 nm range. The MgO-Y2O3 nanopowder was plasma sprayed using a conventional, DC arc plasma spray system. X-ray diffraction analysis shows that the as-sprayed MgO-Y2O3 coating is composed of cubic MgO and Y2O3 phases and has ~95% density. Microstructure characterization by SEM reveals that the as-sprayed coating has fine grain sizes of 100-300 nm as a result of rapid solidification. The hardness of the coating, 7.5 ± 0.6 GPa, is higher than that of coarse-grained, dense MgO, and Y2O3 ceramics. This approach demonstrates the potential of plasma spray processes for making thick, dense MgO-Y2O3 nanocomposite performs for applications as durable, infrared windows. 相似文献
43.
日前,深交所完成了对主板、中小企业板上市公司2009年度信息披露的考核工作。在深市758家上市公司中,中联重科等51家主板公司考核结果“优秀”,信息披露质量得到较快提高。此次考核是年度结束后对上市公司2009年全年信息披露工作进行的综合性考核,主要包括对上市公司全年临时报告及定期报告披露质量的考核。 相似文献
44.
45.
从PCI/ISA到双总线ePCI-X, 一种设计重用方法
在当今的PCI/ISA背板中,显然PC芯片组ISA插槽的数量在减少,PCI插槽的数量在增多.…… 相似文献
46.
EricLenoir 《国外电子元器件》2003,(12):70-73
DC -DC转换器开关频率的提高允许采用越来越小的外部元件(MaximIntegratedProductsInc)。在传统设计中 ,一般采用钽电容作为开关电源的外部电容 ,事实上 ,新型陶瓷电容在许多开关电源中可以获取同等指标 ,并达到同样的设计目的 ,而且 ,用陶瓷电容替代钽电容可节省系统成本、同时又能减小系统尺寸。本文通过计算结果表明 :陶瓷电容用于正激和反激电路拓扑中是完全可以接受的。当然 ,它更适合低功率转换器的应用 (输出电流低于1A)。一般情况下 ,选择电容时主要考虑以下几个参数 :电容值(C)、等效串联电阻 (ESR)、等效串联电感 (ESL)、… 相似文献
47.
Eric Newman Rob Reeder 《今日电子》2006,(5):32-36
高采样速率模数转换器(ADC)通常用在现代无线接收器设计中,以中频(IF)采样速率采集复数调制的信号.这类设计通常都选用基于CMOS开关电容的ADC,因为它们的低成本和低功耗特点很吸引人。但这类ADC采用一种直接连接到采样网络的无缓冲器的前端,这样就会出现驱动ADC的放大器的输入跟踪和保持阻抗随时间变化的问题.为了有效地驱动ADC,使噪声最低和有用信号失真最小,必须设计一种无源网络接口帮助抑制宽带噪声,并对跟踪阻抗和保持阻抗进行变换以便为驱动放大器提供更好的负载阻抗。针对几种常见的IF频率,本文中提出了一种谐振匹配方法,用于将跟踪和保持阻抗转换为比较容易计算的负载,从而实现抗锯齿滤波器的精密设计。 相似文献
48.
Sofiane Aloui Nicolas Delaunay Eric Kerherve Nathalie Deltimple Robert Plana Didier Belot 《Analog Integrated Circuits and Signal Processing》2012,70(2):203-211
A millimeter-wave Power Amplifier (PA) based on a 65nm CMOS technology from STMicroelectronics has been designed. The targeted feature is the unlicensed band around 60 GHz suitable for wireless personal area network application (WPAN). To optimize the linearity, the PA is designed under class A biasing to have an output compression point (OCP1) close to its saturated Power (P sat). S-parameters and large signal measurement results are demonstrated and compared with electromagnetic simulations. The PA offers a P sat of 8.3 dBm, an OCP1 of 6 dBm and a gain of 6.7 dB. The die area is 0.29 mm2 with pads. Considering those results, one-tone simulations are not sufficient to characterize the linearity performances of the PA in its real conditions of use. Consequently, two-tone simulations are firstly performed. After, linearity figures of merit (FoM) are discussed applying an orthogonal frequency-division multiplexing (OFDM) modulated signal. The PA offers an adjacent channel power ratio (ACPR) of 15 dB and an error vector magnitude (EVM) of 20% at PA compression operating mode. 相似文献
49.
Yasin Kanbur Mihai Irimia-Vladu Eric D. Głowacki Gundula Voss Melanie Baumgartner Günther Schwabegger Lucia Leonat Mujeeb Ullah Hizir Sarica Sule Erten-Ela Reinhard Schwödiauer Helmut Sitter Zuhal Küçükyavuz Siegfried Bauer Niyazi Serdar Sariciftci 《Organic Electronics》2012,13(5):919-924
We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ~0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. 相似文献
50.
Hylke B. AkkermanAlice C. Chang Eric Verploegen Christopher J. Bettinger Michael F. ToneyZhenan Bao 《Organic Electronics》2012,13(2):235-243
Highly crystalline thin films of organic semiconductors processed from solution for electronic devices are difficult to achieve due to a slow and preferential three-dimensional growth of the crystals. Here we describe the development of a processing technique to induce a preferential two-dimensional crystalline growth of organic semiconductors by means of minimizing one dimension and confining the solution in two dimensions into a thin layer. The versatility of the process is demonstrated by processing small molecules (TIPS-pentacene and C60) and a polymer (P3HT), all from solvents with a relatively low boiling point, to obtain crystalline thin films. The thin films show an improved in-plane packing of the molecules compared to films processed under similar conditions by spin coating, which is beneficial for the use in organic field-effect transistors. 相似文献