Self-organized public-key management for mobile ad hoc networks

In contrast with conventional networks, mobile ad hoc networks usually do not provide online access to trusted authorities or to centralized servers, and they exhibit frequent partitioning due to link and node failures and to node mobility. For these reasons, traditional security solutions that require online trusted authorities or certificate repositories are not well-suited for securing ad hoc networks. We propose a fully self-organized public-key management system that allows users to generate their public-private key pairs, to issue certificates, and to perform authentication regardless of the network partitions and without any centralized services. Furthermore, our approach does not require any trusted authority, not even in the system initialization phase.     

From Poldhu to the Italian station of Coltano: Marconi and the first years of transcontinental wireless

This paper presents the evolution of low-frequency, high-power transcontinental transmission, starting from the first successful transatlantic link from Poldhu up to the Italian transcontinental station of Coltano. The trend toward higher and higher transmitting power, and the dead end into which wireless was heading if it were not for research in the higher frequency ranges, are pointed out.     

Graph-theoretic construction of low-density parity-check codes

This article presents a graph-theoretic method for constructing low-density parity-check (LDPC) codes from connected graphs without the requirement of large girth. This method is based on finding a set of paths in a connected graph, which satisfies the constraint that any two paths in the set are either disjoint or cross each other at one and only one vertex. Two trellis-based algorithms for finding these paths are devised. Good LDPC codes of practical lengths are constructed and they perform well with iterative decoding.     

A multiwinding modeling method for high frequency transformers and inductors

This paper presents a method to obtain an electric model for transformers and inductors, including both frequency and geometry effects in the windings, which can be linked with existing core models. One-dimensional distributions for magnetic and electric fields are assumed, and from Maxwell's equations an equivalent electric circuit is easily obtained. This equivalent circuit has been included in analog simulators (Spice, AnalogWorkBench, Saber ...), and comparisons between measured and simulated results are shown, both in time domain and in AC sweep, which verify the model accuracy. The model described in this paper allows designers to deal with key issues in the design of high-frequency magnetic components (copper losses, leakage inductance, skin and proximity effects) by using analog simulators, which are usually more familiar to them than finite-element analysis tools.     

On the convergence of the inverses of Toeplitz matrices and its applications

Many issues in signal processing involve the inverses of Toeplitz matrices. One widely used technique is to replace Toeplitz matrices with their associated circulant matrices, based on the well-known fact that Toeplitz matrices asymptotically converge to their associated circulant matrices in the weak sense. This often leads to considerable simplification. However, it is well known that such a weak convergence cannot be strengthened into strong convergence. It is this fact that severely limits the usefulness of the close relation between Toeplitz matrices and circulant matrices. Observing that communication receiver design often needs to seek optimality in regard to a data sequence transmitted within finite duration, we define the finite-term strong convergence regarding two families of matrices. We present a condition under which the inverses of a Toeplitz matrix converges in the strong sense to a circulant matrix for finite-term quadratic forms. This builds a critical link in the application of the convergence theorems for the inverses of Toeplitz matrices since the weak convergence generally finds its usefulness in issues associated with minimum mean squared error and the finite-term strong convergence is useful in issues associated with the maximum-likelihood or maximum a posteriori principles.     

Extracting Light from Polymer Light‐Emitting Diodes Using Stamped Bragg Gratings

In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %.     

Surface effects in nanocrystalline silicon

Exposure to ammonia (NH₃) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pumping alone is unable to restore the initial annealed state, but annealing brings it back. The final state obtained by LS and NH₃ exposure depends on the order in which they are performed. Evaporated selenium (Se) deposited on nanocrystalline silicon decreases the DC. These effects cannot be explained entirely by the presence of a-Si : H alone, in our sample. DC and photoluminescence (PL) measurements indicate the presence of two types of center in our sample, which behave differently when exposed to NH₃.     

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Passivated single damascene copper SiO₂ damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN.