人体头发中重金属元素铬含量的高光谱检测

头发中的重金属含量可以反映出人体健康的变化。提出了运用高光谱数据检测头发中重金属元素铬含量的方法。对头发的透射率波长曲线进行了包络线消除、吸收特征参量化等处理。以化学检测的铬含量作为标准数据,化学检测精度可达90%以上。然后训练人工神经网络,通过调节网络的隐含层层数、结点数和激活函数来优化模型。实验计算表明,隐含层层数为1,结点数为7或9的人工神经网络的预测效果较好。利用统计实验结果对人工神经网络的内部精度和外部精度进行评价。人体头发中铬的敏感波段为1380 nm～1550 nm、1880 nm～2100 nm、2120 nm～2210 nm;训练后的神经网络预测的均方根误差为13%,精度达87%。实验结果表明,应用高光谱技术可以快速无损地检测人体头发中的重金属元素铬的含量。     

亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述

建立了衬底电流模型中特征长度参数的改进描述,该参数的引入使衬底电流模型能够有效地适用于从微米尺寸到亚微米、深亚微米尺寸的LDD MOSFET.在以双曲正切函数描述的I-V特性基础上,该解析模型的运算量远低于基于数值分析的物理模型,其中提取参数的运用也大大提高了模型的精度,模拟结果与实验数据有很好的一致性.     

低温沉积硅薄膜微结构的Raman分析

用Raman散射谱研究了以SiH4/H2为气源,用等离子体增强化学气相沉积技术,低温制备的一系列硅薄膜的微结构特征.结果表明:在常规气压和常规功率下,衬底温度在200～500 ℃之间,存在结晶最佳点,400 ℃结晶效果相对最好;在高压高功率下沉积和常压常功率下沉积相比,高压高功率更有利于薄膜晶化;低温短时的高气压高功率沉积,玻璃衬底与铝覆盖的玻璃衬底相比,玻璃上的硅薄膜晶粒尺寸更大,而铝覆盖的玻璃衬底上的硅薄膜的晶化率更高.     

网络经济下开源运动的抉择探析

从寡头垄断市场结构角度来分析开源运动现象存在的内在实质原因，并对开源后的寡头领先企业和跟随企业对市场规模的影响和企业的决策行为选择进行深入分析，并对在这种环境下的各自的优势和劣势进行了对比分析，指出了对中国企业的借鉴作用。     

Nanoneedle Platforms: The Many Ways to Pierce the Cell Membrane

Establishing techniques to efficiently and nondestructively access the intracellular milieu is essential for many biomedical and scientific applications, ranging from drug delivery, to electrical recording, to biochemical detection. Cell penetration using nanoneedle arrays is currently a research focus area because it not only meets the increasing therapeutic demands of cell modifications and genome editing, but also provides an ideal platform for tracking long‐term intracellular information. Although the precise mechanism driving membrane penetration by nanoneedle arrays is still unclear, the low cytotoxicity, wide range of delivered materials, diverse cell type targets, and simple material structures of nanoneedle arrays make these splendid platforms for cell access. Here, the recent progress in this field is reviewed by examining device architectures and discussing mechanisms for nanoneedle penetration, and the major studies demonstrating the most general applicability of nanoneedle arrays, typical methodologies to access the intracellular environment using nanoneedles with spontaneous or assisted penetration modes, as well as biosafety aspects are presented. This review should be valuable for deeply understanding the materials fabrication principles, device designs, cell penetration methodologies, biosafety aspects, and application strategies of nanoneedle array‐based systems that are of crucial importance for the development of future practical biomedical platforms.     

激光治疗皮肤色素性及血管性病变的疗效观察

本文报告用维纳斯多波长、多功能的固体激光、治疗各种色素性及血管性病变379例。其中对黑兰色素性病变治愈率可达98％以上，对血管性病变治愈好转率可达80％以上。该治疗方法副作用少，目前是治疗色素性疾病及血管性疾病的最好方法。     

A physical compact model of DG MOSFET for mixed-signal circuit applications- part I: model description

To use double-gate (DG) MOSFET for mixed-signal circuit applications, especially for circuits in which the two gates are independently driven, such as in the case of dynamic-threshold and fixed-potential-plane operations, physical compact models that are valid for all modes of operations are necessary for accurate design and analysis. Employing physically rigorous current-voltage (I-V) relationship in subthreshold and above-threshold regions as asymptotic cases, we have constructed a model that joins the two operating regions by using carrier-screening functions. We have included consistently source/drain series resistance, low drain-field mobility, and small-geometry effects of drain-induced barrier lowering (DIBL), MOS interface mobility, velocity saturation and channel-length modulation (CLM) with validation from two-dimensional (2-D) distributed simulation. All model parameters can be extracted from large-signal I-V characteristics in dc conditions with given geometrical data. Parameter extraction methods and verification from simulation are presented in Part II.     

基于容器对象的动态控件数组研究

动态控件数组是应用程序设计中经常用到的重要手段之一。合理地使用动态控件数组不但能简化程序、方便维护,还可以节约内存空间,对动态控件数组的研究有助于增加应用程序灵活性,能有效提高编程效率。鉴于此,提出了在C＋＋Builder环境下基于容器对象的动态控件数组实现方案,分别给出利用三种容器对象TList,DynamicArray和Vector实现动态控件数组的思想,对三者的性能进行比较分析,并总结了实现动态控件数组的原理、方法和技巧。     

基于线性规划的关键面积最小化方法

随着集成电路(IC)技术的不断发展,尤其在90nm和65 nm技术节点,集成电路制造业的投资剧增而随机成品率却在下降.为了提升随机成品率,需要在布线或后布线阶段减小关键面积.文中提出一种基于线性规划降低关键面积的方法,使关键面积在一组条件约束下,通过版图中一些特征量的变化,建立起一个线性规划模型,然后求其最优解,进而得出关键面积的最小值.该方法的优点是把一个版图优化问题转化为数学问题,使问题更精确化,从而为成品率的优化提供了一条新途径.     

超深亚微米LDD nMOSFET中的非幸运电子模型效应

通过对采用0.18μm CMOS工艺制造的两组不同沟道长度和栅氧厚度的LDD器件电应力退化实验发现,短沟薄栅氧LDD nMOSFET(Lg=0.18μm,Tox=3.2nm)在沟道热载流子(CHC)应力下的器件寿命比在漏雪崩热载流子(DAHC)应力下的器件寿命要短,这与通常认为的DAHC应力(最大衬底电流应力)下器件退化最严重的理论不一致.因此,这种热载流子应力导致的器件退化机理不能用幸运电子模型(LEM)的框架理论来解释.认为这种"非幸运电子模型效应"是由于最大碰撞电离区附近具有高能量的沟道热电子,在Si-SiO2界面产生界面陷阱(界面态)的区域,由Si-SiO2界面的栅和漏的重叠区移至沟道与LDD区的交界处以及更趋于沟道界面的运动引起的.