Power consumption reduction through elastic data rate adaptation in survivable multi-layer optical networks

Network survivability requires the provisioning of backup resources in order to protect active traffic against any failure scenario. Backup resources, however, can remain unused most of the time while the network is not in failure condition, inducing high power consumption wastage, if fully powered on. In this paper, we highlight the power consumption wastage of the additional resources for survivability in IP/multi-protocol label switching (MPLS) over dense wavelength division multiplexing multi-layer optical networks. We assume MPLS protection switching as the failure recovery mechanism in the network, a solution interesting for current network operators to ensure fast recovery as well as fine-grained recovery treatment per label switched path. Next, we quantitatively show how elastic optical technologies can effectively reduce such a power consumption by dynamically adjusting the data rate of the transponders to the carried amount of traffic.     

On the Complexity of Distributed Self-Configuration in Wireless Networks

We consider three distributed configuration tasks that arise in the setup and operation of multi-hop wireless networks: partition into coordinating cliques, Hamiltonian cycle formation and conflict-free channel allocation. We show that the probabilities of accomplishing these tasks undergo zero-one phase transitions with respect to the transmission range of individual nodes. We model these tasks as distributed constraint satisfaction problems (DCSPs) and show that, even though they are NP-hard in general, these problems can be solved efficiently on average when the network is operated sufficiently far from the transition region. Phase transition analysis is shown to be a useful mechanism for quantifying the critical range of energy and bandwidth resources needed for the scalable performance of self-configuring wireless networks.     

An energy efficient middleware for an ad-hoc AAL wireless sensor network

DIA (Dispositivo Inteligente de Alarma, in Spanish) is an AAL (Ambient Assisted Living) system that allows to infer a potential dangerous action of an elderly person living alone at home. This inference is obtained by a specific sensorisation with sensor nodes (portables and fixes) and a reasoning layer embedded in a PC that learns of the users behaviour patterns and advices when actual one differs significantly of the normal patterns. In AAL systems, energy is a limited resource therefore sensor devices need to be properly managed to conserve energy. In this paper, we introduce the design and implementation of innovative and specific mechanisms at the sensory layer middleware which is capable of, first to discriminate spurious motion detections assuming that these signals do not resemble the patterns of real motion detections and, second to reduce the dynamics of messages by a sensor signal processing in order to compress the whole information in one single event. The middleware achieves power saving by modifying the raw information from sensors and adapting it to the predefined semantic of the reasoning layer. It manages the important task of data processing from sensors (raw information), and transfers the pre-processed information into the top layer of reasoning in a more energy efficient way. We also address the trade-off between reducing power consumption and reducing delay for incoming data. We present results from experiments using our implementation of these mechanisms at the middleware that comprises from node firmware to the PC driver. The number of messages of the proposed method with respect to the raw data is reduced by approximately 98.5%. The resources used in the PIR signal processing is reduced by approximately 85%. The resulting delay introduced is small (10–19 s) but system dynamics is slow enough to avoid contextualisation errors or reduction of system performance. We consider these results as very satisfactory.     

Self‐Defensive Biomaterial Coating Against Bacteria and Yeasts: Polysaccharide Multilayer Film with Embedded Antimicrobial Peptide

Prevention of pathogen colonization of medical implants is a major medical and financial issue since infection by microorganisms constitutes one of the most serious complications after surgery or critical care. Immobilization of antimicrobial molecules on biomaterials surfaces is an efficient approach to prevent biofilm formation. Herein, the first self‐defensive coating against both bacteria and yeasts is reported, where the release of the antimicrobial peptide is triggered by enzymatic degradation of the film due to the pathogens themselves. Biocompatible and biodegradable polysaccharide multilayer films based on functionalized hyaluronic acid by cateslytin (CTL), an endogenous host‐defensive antimicrobial peptide, and chitosan (HA‐CTL‐C/CHI) are deposited on a planar surface with the aim of designing both antibacterial and antifungal coating. After 24 h of incubation, HA‐CTL‐C/CHI films fully inhibit the development of Gram‐positive Staphylococcus aureus bacteria and Candida albicans yeasts, which are common and virulent pathogens agents encountered in care‐associated diseases. Hyaluronidase, secreted by the pathogens, leads to the film degradation and the antimicrobial action of the peptide. Furthermore, the limited fibroblasts adhesion, without cytotoxicity, on HA‐CTL‐C/CHI films highlights a medically relevant application to prevent infections on catheters or tracheal tubes where fibrous tissue encapsulation is undesirable.     

Using Stochastic Differential Equation for Verification of Noise in Analog/RF Circuits

Today’s analog/RF design and verification face significant challenges due to circuit complexity, process variations and short market windows. In particular, the influence of technology parameters on circuits, and the issues related to noise modeling and verification still remain a priority for many applications. Noise could be due to unwanted interaction between the circuit elements or it could be inherited from the circuit elements. In addition, manufacturing disparity influence the characteristic behavior of the manufactured circuits. In this paper, we propose a methodology for modeling and verification of analog/RF designs in the presence of noise and process variations. Our approach is based on modeling the designs using stochastic differential equations (SDE) that will allow us to incorporate the statistical nature of noise. We also integrate the device variation due to 0.18μ m fabrication process in an SDE based simulation framework for monitoring properties of interest in order to quickly detect errors. Our approach is illustrated on nonlinear Tunnel-Diode and a Colpitts oscillator circuits.     

Comprehensive nanostructural study of SSRM nanocontact on silicon

Scanning Spreading Resistance Microscopy electro-mechanical nanocontacts are nowadays well understood and numerous influent parameters have been identified (bias, load, surface state sample, radius of curvature of the tip). Despite several simulation and modelization possibilities, calibration curves are required to ensure reliable electrical characterizations. In this paper, we bring, through nanostructural studies (Scanning Transmission Electron Microscopy) of surface state of both SSRM tips and doped silicon surface a new understanding of tip-sample interaction during SSRM measurements. As a result of load, a nanometric residual amorphous silicon layer was observed which thickness depends on applied force and might be due to as well to the plastic transformation (Si to β-tin phase) as to plough-effect residues resulting from the tip indentation into the sample. It appears thus important in a failure analysis process to find the best compromise between stable electrical SSRM response and sample/tip surface degradation.     

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors with amorphous semiconductor layer

In this paper we show that thiolated self-assembled monolayers (SAMs) can be used to anchor source–drain gold electrodes on the substrate, leading to excellent electrical performances of the organic field-effect transistor (OFET) on a par with those using a standard electrode process. Using an amorphous semiconductor and a gate dielectric functionalized with SAMs bearing different dipole moments, we demonstrate that we can tune the threshold voltage alone, while keeping nearly unchanged the other electrical properties (hole carrier mobility, I_on/I_off ratio, subthreshold swing). This differs from previous studies for which SAMs functionalization induced significant changes in all the OFET electrical performances. This result opens doors to design organic circuits using reproducible amorphous semiconductor based OFETs for which only the threshold voltage can be tuned on demand.     

Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

We report the use of a new precursor, trisneopentylgallium (NPG) for the growth of GaAs by atomic layer epitaxy (ALE). In contrast to most other alkyl gallium precursors such as triethylgallium, which decompose via a β-hydride elimination mechanism, this compound undergoes homolysis similar to that of trimethylgallium (TMGa), the normal choice as an ALE precursor. Clear self-limiting growth behavior similar to that of TMGa was observed over a reasonably wide range of growth conditions (430–500°C). Carbon incorporation was not significantly reduced compared with TMGa suggesting that the adsorbed neopentyl radicals undergo decomposition to result in a methyl terminated surface identical to that obtained for growth with TMGa.     

Cadmium sulfide thin films growth by chemical bath deposition

Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD).A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 ℃ at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties.The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution.The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002),respectively.The optical characterization indicated that the films have a fairly high transparency,which varies between 55％ and 80％ in the visible range of the optical spectrum,the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV.It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.     

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

This paper reviews recent developments in the characterization of planar p-on-n photodiodes fabricated from long- and mid-wavelength Hg_1−x Cd _x Te at␣the Electronics and Information Technology Laboratory (LETI). The Hg_1−x Cd _x Te epitaxial layers were grown by both liquid-phase and molecular-beam epitaxy. Planar p-on-n photodiodes were fabricated by arsenic implantation into an indium-doped Hg_1−x Cd _x Te base layer. Electro-optical characterization on these p-on-n photodiodes showed low leakage currents (shunt resistance > 10 GΩ) and mean R ₀ A values comparable to the state of the art, i.e., equal to 5000 Ω cm² at λ _c = 9.3 μm (λ _c: cutoff wavelength). Results of focal-plane arrays operating in both the long-wavelength infrared (IR) and middle-wavelength IR bands are reported, with noise equivalent delta temperature and responsivity values at λ _c = 9.3 μm in excess of 99.64%. These results demonstrate the viability and technological maturity of both material growth and device processing.