The development of the TRAP-97 software system. A sensitivity analysis

We present the results from an analysis of the sensitivity of a calculation carried out using the KAMAZ software module to the number of calculation points over the cross section of a fuel assembly, to the number of sections along the core height, and to the method employed for solving the equations of neutron kinetics.     

Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO/sub 2/ gate dielectricon ultrathin SiON buffer layer

The variable rise and fall time charge-pumping technique has been used to determine the energy distribution of interface trap density (D/sub it/) in MOSFETs with a HfO/sub 2/ gate dielectric grown on an ultrathin (<1 nm)-SiON buffer layer on Si. Our results have revealed that the (D/sub it/) is higher in the upper half of the bandgap than in the lower half of the bandgap, and are consistent with qualitative results obtained by the subthreshold current-voltage (I--V) measurements, capacitance-voltage (C-V), and ac conductance techniques. These results are also consistent with the observation that n-channel mobilities are more severely degraded than p-channel mobilities when compared to conventional MOSFETs with SiO/sub 2/ or SiON as the gate dielectric.     

Performance parameters of TiN — AlN ceramic end seals frictionally coupled to steel

Performance parameters (friction moment, temperature in the friction zone, and surface roughness parameter R _a ) of friction couples 50% TiN + 50% AlN (composite 1 ) steel and 25% TiN + 75% AlN (composite 2 ) used as end seal components of belt conveyor rollers have been determined experimentally. __________ Translated from Novye Ogneupory, No. 5, pp. 40–43, May, 2006.     

Spin Polarization by Tilted Magnetic Field in Wide Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As Parabolic Quantum Wells

Wide parabolic wells can be created by properly controlling the Al content during the growth of successive Ga_1–xAl_xAs thin layers. Under a tilted magnetic field these systems present interesting transport properties, which are associated to their composition dependent g-factor. We present an exact solution for the eigenstates of an electron gas inside such a quantum well. We calculate the renormalized cyclotron frequencies as functions of the angle of tilt, as well as the density of states, and the Fermi level. We discuss the conditions for the existence of spin-polarized charge.