K-winner networks.

A special class of mutually inhibitory networks is analyzed, and parameters for reliable K-winner performance are presented. The network dynamics are modeled using interactive activation, and results are compared with the sigmoid model. For equal external inputs, network parameters that select the units with the larger initial activations (the network converges to the nearest stable state) are derived. Conversely, for equal initial activations, networks that select the units with larger external inputs (the network converges to the lowest energy stable state) are derived. When initial activations are mixed with external inputs, anomalous behavior results. These discrepancies are analyzed with several examples. Restrictions on initial states are derived which ensure accurate K-winner performance when unequal external inputs are used.     

Intelligent identification and control for autonomous guided vehicles using adaptive fuzzy-based algorithms

Fuzzy logic was first suggested as the mechanism by which humans drive cars. This paper addresses the use of fuzzy logic and algorithms towards the intelligent autonomous motion control of land vehicles. To cope with vehicle complexities, internal parametric changes, and with unpredictable environmental effects, the controllers that are presented, whilst heuristic in nature, are self-organizing or self-learning in that they generate automatically by observation an experiential rule base that models the vehicle, and via an appropriate performance index an optimal control rule base that is robust to large parametric changes. The methodology presented is applicable to any complex process which is too difficult to model or control using conventional methods, or which has relied on the experience of a human operator. An overview of fuzzy logic and static fuzzy logic control (akin to expert systems) is provided, together with illustrative examples.     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.