全文获取类型
收费全文 | 243532篇 |
免费 | 3156篇 |
国内免费 | 1241篇 |
专业分类
电工技术 | 4838篇 |
综合类 | 264篇 |
化学工业 | 35450篇 |
金属工艺 | 10888篇 |
机械仪表 | 7079篇 |
建筑科学 | 6238篇 |
矿业工程 | 481篇 |
能源动力 | 6278篇 |
轻工业 | 24168篇 |
水利工程 | 1837篇 |
石油天然气 | 1335篇 |
武器工业 | 3篇 |
无线电 | 31092篇 |
一般工业技术 | 44909篇 |
冶金工业 | 50161篇 |
原子能技术 | 3860篇 |
自动化技术 | 19048篇 |
出版年
2021年 | 1566篇 |
2019年 | 1429篇 |
2018年 | 2325篇 |
2017年 | 2225篇 |
2016年 | 2444篇 |
2015年 | 1910篇 |
2014年 | 3162篇 |
2013年 | 10802篇 |
2012年 | 5458篇 |
2011年 | 7796篇 |
2010年 | 6289篇 |
2009年 | 6973篇 |
2008年 | 7567篇 |
2007年 | 7664篇 |
2006年 | 7037篇 |
2005年 | 6526篇 |
2004年 | 6250篇 |
2003年 | 6266篇 |
2002年 | 6241篇 |
2001年 | 6375篇 |
2000年 | 5812篇 |
1999年 | 6424篇 |
1998年 | 16579篇 |
1997年 | 11614篇 |
1996年 | 8962篇 |
1995年 | 6695篇 |
1994年 | 5917篇 |
1993年 | 5734篇 |
1992年 | 4056篇 |
1991年 | 4000篇 |
1990年 | 3586篇 |
1989年 | 3508篇 |
1988年 | 3443篇 |
1987年 | 2910篇 |
1986年 | 2844篇 |
1985年 | 3414篇 |
1984年 | 3052篇 |
1983年 | 2747篇 |
1982年 | 2550篇 |
1981年 | 2574篇 |
1980年 | 2436篇 |
1979年 | 2276篇 |
1978年 | 2237篇 |
1977年 | 2809篇 |
1976年 | 4172篇 |
1975年 | 1899篇 |
1974年 | 1795篇 |
1973年 | 1783篇 |
1972年 | 1460篇 |
1971年 | 1317篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
151.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
152.
Super-orthogonal space-time trellis codes 总被引:3,自引:0,他引:3
Jafarkhani H. Seshadri N. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(4):937-950
We introduce a new class of space-time codes called super-orthogonal space-time trellis codes. These codes combine set partitioning and a super set of orthogonal space-time block codes in a systematic way to provide full diversity and improved coding gain over earlier space-time trellis code constructions. We also study the optimality of our set partitioning and provide coding gain analysis. Codes operating at different rates, up to the highest theoretically possible rate, for different number of states can be designed by using our optimal set partitioning. Super-orthogonal space-time trellis codes can provide a tradeoff between rate and coding gain. Simulation results show more than 2-dB improvements over the codes presented in the literature while providing a systematic design methodology. 相似文献
153.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
154.
Limited-trial Chase decoding 总被引:1,自引:0,他引:1
Arico G. Weber J.H. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(11):2972-2975
Chase decoders permit flexible use of reliability information in algebraic decoding algorithms for error-correcting block codes of Hamming distance d. The least complex version of the original Chase algorithms uses roughly d/2 trials of a conventional binary decoder, after which the best decoding result is selected as the final output. On certain channels, this approach achieves asymptotically the same performance as maximum-likelihood (ML) decoding. In this correspondence, the performance of Chase-like decoders with even less trials is studied. Most strikingly, it turns out that asymptotically optimal performance can be achieved by a version which uses only about d/4 trials. 相似文献
155.
We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si. 相似文献
156.
VCOs fully integrated in an SiGe preproduction technology are presented. By cutting interconnection lines a wide frequency range can be covered, up to 88.4 GHz. Special effort has been made to meet the demands for 77 GHz automotive radar. In the corresponding tuning range from 75.3 to 79.6 GHz, an output power of about 11 dBm (with -2.2 dBm potential measurement uncertainty) was achieved for each of the two complementary outputs, i.e. in total 14 dBm. The phase noise is about -94 dBc/Hz at 1 MHz offset frequency. 相似文献
157.
The effect of thermal annealing in the temperature range T a=300–600°C of films of microcrystal-line hydrogenated silicon (μc-Si:H) lightly doped with boron on the spectral dependences of the absorption coefficient (α) at photon energies hν=0.8–2.0 eV, dark conductivity (σd), and photoconductivity (Δσph) was studied at room temperature. With increasing annealing temperature, a nonmonotonic variation of α (at hν<1.2 eV), σd, and Δσph was observed. The data obtained are attributed to a change in the concentration of electrically active impurities and formation of defects, caused by hydrogen effusion and bond restructuring at high annealing temperatures. 相似文献
158.
On the synergy between electrical and photonic switching 总被引:1,自引:0,他引:1
This article focuses on the values of electrical switching vs. photonic switching in the context of telecom transport networks. In particular, we show that the requirement of providing agility at the optical layer in the face of traffic forecast uncertainties is served better through photonic switching. On the other hand, some of the network-level functions, such as fast protection, subwavelength aggregation, and flexible client connectivity, require electrical switching. We further argue that additional values are achieved with hybrid photonic and electrical switching, which do not exist when either of these options is used in isolation. 相似文献
159.
In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts. 相似文献
160.
Towards intelligent dressing 总被引:1,自引:0,他引:1
Egana I. Mendikute A. Urionaguena X. Alberdi H. 《IEEE instrumentation & measurement magazine》2006,9(3):38-43
The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability. 相似文献