OTDM transmitter using WDM-TDM conversion with an electroabsorptionwavelength converter

An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal     

Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.     

A STUDY OF THE PRIMARY PHASE OF FOOD FREEZE-DRYING IN VACUO

In the development of a novel freeze-drying technique in a fluidized bed at atmospheric pressure, a parallel study was undertaken using a conventional vacuum equipment. Two kinetically distinct phases were observed during freeze drying of representative Pood samples:

(1) a period during which the rate of drying was constant and (2) a second period during which the drying rate sufferedcontinual reduction. This paper focused attention on the primary drying period which corresponded with the kinetics of sublimation of pure     

IEEE Richard Harold Kaufmann Award Call for Nominations

This letter further discusses the difference between different definitions of voltage unbalance. Contrary to an earlier letter (see P. Pillay et al., ibid., vol.5, p.50-1, 2001), it is concluded that different definitions may give significantly different results. The two IEEE definitions that were not discussed in the earlier letter give different results and both deviate significantly from the true value (ratio of negative, and positive-sequence voltage) when a zero-sequence component is present.     

Special numbers,still proceedings,other novelties

Modifications of solid water and their transitions are described as they relate to cryo electron microscopy. In particular, the various amorphous states (amorphous polymorphs) as they exist below 100 K are extensively investigated. The “high-density” midification exhibits a lower viscosity than the “low-density” form. Differences are also observed in the mechanism of void formation due to electron irradiation: in the high-density form, voids are formed — not, however, in the low-density form. Together with the reaction to radiation damage, the physical properties of amorphous solid water are discussed with respect to embedding of organic specimens. Finally, the conditions and pitfalls associated with preparation of thin and entirely vitrified ice layers by shock-freezing are described.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices