剪切场下聚合物结晶形态学研究进展

聚合物熔体被引入剪切场后，会发生与静态下不同的结晶现象。微观上可以得到伸直链晶体、片晶及串晶；宏观上除了静态下典型的球晶外，还能观察到球晶的变形和柱晶等。另外，剪切还可以使晶体发生晶型转变。本文对聚合物熔体在剪切场下结晶形态学的研究进展进行了介绍。     

蒸发器母液循环泵、过料泵泵壳泄漏分析及对策

介绍我公司氧化铝厂KESTNER蒸发器母液循环泵、过料泵泵壳的泄漏情况 ,分析泄漏原因 ,提出相应的改进措施     

钨冶炼产业现状与建议

叙述了中国钨冶炼产业的现状以及存在的问题,针对这些问题提出了几点建议。     

弘扬和培育民族精神实现中华民族伟大复兴

民族精神是一个民族赖以生存和发展的精神支柱.弘扬民族精神既有传承又有创新.民族精神是当今世界综合国力的重要组成部分,民族精神为实现中华民族复兴提供了不竭的精神动力.     

双十二烷基长链季铵盐吸附及渗透性能的研究

双季铵盐化合物是一种具有广阔应用前景的表面活性剂。以二氯乙醚为联接剂,利用脂肪叔胺合成了一种长链的双季铵盐类化合物(简称BQA),用交流阻抗、电子扫描显微镜等方法研究了BQA在Q235钢表面的吸附、缓蚀及对生物膜下硫酸盐还原菌(SRB)的杀灭机理。研究结果表明:在模拟油田水介质中BQA对碳钢具有较为显著的缓蚀作用,与传统杀菌剂相比具有更好的渗透杀菌性能。     

π网络石英晶片自动分选机测控系统设计

石英晶片自动分选机的设计对提高国内石英晶片测试行业水平具有重要的实用价值.测控系统采用π网络零相位技术,主要由计算机、信号发生器、π网络和控制电路等组成.实验结果表明,系统测试频率范围为1 MHz～60 MHz,中心频率附近分选一致性高达80%,主要性能指标优于国内普遍采用的振荡器测试系统和阻抗计测试系统,并能有效地测试寄生谐振频率.     

Research on Processes and Adhesion of Electroless Plating Ni-Cu-P Coating

In order to improve the corrosion and wear resistance of the coatings of electroless plating Ni-Cu-P and broaden its application, an optimizing mathematical theory test has been applied in this research. The processing parameters have been optimized and some Ni-Cu-P coatings have been obtained with smooth and glittering appearance. At the same time,the composite complexants can prevent copper from depositing first and obtain coatings with strong adhesion. The porosity of Ni-Cu-P coating (20 μm) ranked class 9. The changing color time of the coating is more than 800 seconds with HNO3 dropthan 0.5 g/L. The surface appearance of deposition is typical cystiform cells by SEM,which rank close and neatly.     

全钒液流电池隔膜在钒溶液中的性能

考察了Nafion、日-160、日-80、FYM(日本产Nafion膜)和均相膜5种离子交换膜的两个关键性能(渗透性和面电阻)及其影响因素,对均相膜的化学稳定性进行了初步研究,并对两种膜进行了改性。实验发现:均相膜的钒扩散系数最小,但面电阻较大,化学稳定性不好;用二乙烯苯(DVB)对均相膜改性,综合性能较好;减小电场可降低钒离子扩散,提高钒溶液中氢离子浓度可减小面电阻。     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.     

用Pro/E实现对离子阱的结构仿

简述了三维四极离子阱的基本结构和工作原理。探讨了用Pro/E设计三维四极离子阱基本结构模型的一种简要方法,用参数方程建立基准辅助双曲线,得到了三维四极离子阱的一般实体模型图。