基于广义周期性的单通道多分量正弦调频信号分离和参数估计

针对噪声条件下的单通道多分量正弦调频(SFM)信号,该文提出一种信号分离和参数提取方法。利用正弦调频信号的广义周期性进行奇异值分解,以求出分量信号的调制频率;通过离散点搜索,估计出分量信号的调频(FM)初始相位、调制指数及载频,并对这些估计值利用信赖域算法进行优化,减小误差;利用内积计算,估计分量信号的幅度和初始相位。此外,还利用自相关矩阵特征值分解估计混合信号的信噪比(SNR),并根据信噪比确定停止分解的阈值。在仿真与分析中,针对具体的信号详细说明了该方法的各步骤,并在不同信噪比条件下分析了该方法的参数估计精确度。     

面向云物联网的车辆远程智能监控系统的研究

物联网和云计算使我们进入了网络时代的新阶段。将物联网“物物相连,全面感知”的特征与云平台的“云计算,云存储”能力全面整合,为相关行业形成完整统一的网络服务平台,是互联网 的有效实践方式。针对目前车载监控系统功能相对简单,难以满足将来智能交通对其的系统化、智能化的要求的问题。研究采用物联网技术和云计算理念,实现了面向云物联网的车辆监控信息平台,为车辆的远程智能监控提出了新的发展思路。     

Organic Tribotronic Transistor for Contact‐Electrification‐Gated Light‐Emitting Diode

Tribotronics is a new field about the devices fabricated using the electrostatic potential created by contact electrification as a “gate” voltage to tune/control charge carrier transport in semiconductors. In this paper, an organic tribotronic transistor is proposed by coupling an organic thin film transistor (OTFT) and a triboelectric nanogenerator (TENG) in vertical contact‐separation mode. Instead of using the traditional gate voltage for controlling, the charge carrier transportation in the OTFT can be modulated by the contact‐induced electrostatic potential of the TENG. By further coupling with an organic light‐emitting diode, a contact‐electrification‐gated light‐emitting diode (CG‐LED) is fabricated, in which the operating current and light‐emission intensity can be tuned/controlled by an external force–induced contact electrification. Two different modes of the CG‐LED have been demonstrated and the brightness can be decreased and increased by the applied physical contact, respectively. Different from the conventional organic light‐emitting transistor controlled by an electrical signal, the CG‐LED has realized the direct interaction between the external environment/stimuli and the electroluminescence device. By introducing optoelectronics into tribotronics, the CG‐LED has open up a new field of tribophototronics with many potential applications in interactive display, mechanical imaging, micro‐opto‐electro‐mechanical systems, and flexible/touch optoelectronics.     

FPGA在实时图像预处理中的应用

实时图像处理通常需要巨大的数据吞吐量和运算量。因此专用的硬件或者多重处理技术的并行处理很必要。描述了一个基于现场可编程门阵列(FPGA)的灵活的可编程图像处理系统。FPGA特有的逻辑结构单元对实现实时图像处理来说有着先天的优势。在此,我们提出一个通用的实时图像处理模型,并在FPGA上实现了中值滤波算法,从而对采集的实时图像作预处理。     

A New Pixel Circuit Compensating for Brightness Variation in Large Size and High Resolution AMOLED Displays

A new pixel design and driving method for active-matrix organic light-emitting diode (AMOLED) display using low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) is proposed. The new circuit consists of five TFTs and one capacitor to eliminate the variation in the threshold voltage of the TFTs, and the drop in the supply voltage in a single frame operation. The proposed pixel circuit has been verified to realize uniform output current by the simulation work using HSPICE software. The simulated error rate of the output current is also discussed in this paper. The novel pixel design has great potential for use in large size and high resolution AMOLED displays.     

外加电场极化法制备LiNbO3铁电畴反转光栅

在室温下,应用外加电场极化法对z切0．5mm厚的LiNbO3晶体实现了铁电畴反转,并成功地制备了LiNbO3铁电畴反转光栅。     

Multichannel transmission of a multicore fiber coupled withvertical-cavity surface-emitting lasers

A two-channel simultaneous transmission is experimented using direct coupling between a vertical-cavity surface-emitting laser (VCSEL) array and a novel 2×2 core optical fiber. No crosstalk is observed. Coupling efficiency and mechanical tolerance are good enough to envisage system applications     

圆筒网涂层激光清除的扫描覆盖模型研究

为了提高圆网聚合物覆膜激光清除中扫描覆盖率及光强分布均匀性,提出了一种线式扫描轨迹光强叠覆优化模型。通过分析圆筒转速与激光单点光斑轨迹,分析了清洗区域光斑在圆筒表面的覆盖域规律,建立激光线式扫描轨迹运动函数;由此建构了激光扫描覆盖模型,探究了圆筒转速、激光扫描线速度以及激光平移速度的关联关系,分析了联合运动的激光光斑分布规律;最后,通过与光斑高斯光强进行拟合分析,得到了圆筒转速与光强均度优化参数,实现激光在圆筒网的能量均匀覆盖。对镍金属圆网表面聚合物涂层进行激光辐照实验,并利用红外光谱测试仪检测样本,实验表明:圆网清洗区域涂层特征峰吸光度近似一致,验证了优化参数下光强分布的均匀性。     

Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H₂ on the upper stream to NH₃ on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H₂ flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H₂/NH₃ flow ratio of 1.0, we can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emis-sion in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm²/V-s and concentration of 1 × 10¹⁸ cm⁻³ at 300 K.