Effect of temperature on humido-sensitive conducting polymer actuators

Temperature dependence of water vapor sorption and electro-active polymer actuating behavior of free-standing films made of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT/PSS) was investigated by means of sorption isotherm and electromechanical analyses. The non-porous PEDOT/PSS film, having a specific surface area of 0.13 m² g^?1, sorbed water vapor of 1080 cm³(STP) g^?1, corresponding to 87 wt%, at relative water vapor pressure of 0.95. A temperature rise from 25 °C to 40 °C lowered sorption degree, indicative of an exothermic process, where isosteric heat of sorption decreased with increasing water vapor sorption and the value reached 43.9 kJ mol^?1, being consistent with the heat of water condensation (44 kJ mol^?1). Upon application of 10 V, the film underwent contraction of 2.46% at 5 °C caused by desorption of water vapor due to Joule heating, which slightly decreased to 2.10% at 45 °C. The speed of contraction was one order of magnitude faster than that of expansion and less dependent on the temperature since water vapor sorbed in the film were forced to desorb by Joule heating. In contrast, the higher the temperature the faster the film expansion because diffusion coefficient increased as the temperature became higher.     

Negation-Limited Complexity of Parity and Inverters

In negation-limited complexity, one considers circuits with a limited number of NOT gates, being motivated by the gap in our understanding of monotone versus general circuit complexity, and hoping to better understand the power of NOT gates. We give improved lower bounds for the size (the number of AND/OR/NOT) of negation-limited circuits computing Parity and for the size of negation-limited inverters. An inverter is a circuit with inputs x ₁,…,x _n and outputs ¬ x ₁,…,¬ x _n . We show that: (a) for n=2 ^r ?1, circuits computing Parity with r?1 NOT gates have size at least 6n?log?₂(n+1)?O(1), and (b) for n=2 ^r ?1, inverters with r NOT gates have size at least 8n?log?₂(n+1)?O(1). We derive our bounds above by considering the minimum size of a circuit with at most r NOT gates that computes Parity for sorted inputs x ₁≥???≥x _n . For an arbitrary r, we completely determine the minimum size. It is 2n?r?2 for odd n and 2n?r?1 for even n for ?log?₂(n+1)??1≤r≤n/2, and it is ?3n/2??1 for r≥n/2. We also determine the minimum size of an inverter for sorted inputs with at most r NOT gates. It is 4n?3r for ?log?₂(n+1)?≤r≤n. In particular, the negation-limited inverter for sorted inputs due to Fischer, which is a core component in all the known constructions of negation-limited inverters, is shown to have the minimum possible size. Our fairly simple lower bound proofs use gate elimination arguments in a somewhat novel way.     

Limiting negations in non-deterministic circuits

The minimum number of NOT gates in a Boolean circuit computing a Boolean function f is called the inversion complexity of f. In 1958, Markov determined the inversion complexity of every Boolean function and, in particular, proved that log₂(n+1) NOT gates are sufficient to compute any Boolean function on n variables. In this paper, we consider circuits computing non-deterministically and determine the inversion complexity of every Boolean function. In particular, we prove that one NOT gate is sufficient to compute any Boolean function in non-deterministic circuits if we can use an arbitrary number of guess inputs.     

Technique for anisotropic extension of organic crystals: application to temperature dependence of electrical resistance

We have developed a technique for the anisotropic extension of fragile molecular crystals. The pressure medium and the instrument, which extends the pressure medium, are both made from epoxy resin. Since the thermal contraction of our instrument is identical to that of the pressure medium, the strain applied to the pressure medium has no temperature dependence down to 2 K. Therefore, the degree of extension applied to the single crystal at low temperatures is uniquely determined from the degree of extension in the pressure medium and thermal contractions of the epoxy resin and the single crystal at ambient pressure. Using this novel instrument, we have measured the temperature dependence of the electrical resistance of metallic, superconducting, and insulating materials. The experimental results are discussed from the viewpoint of the extension (compression) of the lattice constants along the parallel (perpendicular) direction.     

Formation of Zirconia Solid Solutions Containing Alumina Prepared by New Preparation Method

In the system ZrO₂–Al₂O₃, a new method for preparing ZrO₂ solid solutions from ZrCl₄ and AlCl₃ using hydrazine monohydrate is investigated. c -ZrO₂ solid solutions containing up to ∼40 mol% Al₂O₃ crystallize at low temperatures from amorphous materials. The formation mechanism is discussed from IR spectral data. The values of the lattice parameter α increase linearly from 0.5072 to 0.5105 nm with increasing Al₂O₃ content. At higher temperatures, transformation of the solid solutions proceeds as follows: c ( SS ) → t ( ss ) → t ( ss ) +α-Al₂O₃→ m +α-Al₂O₃. m -ZrO₂–α-Al₂O₃ composite ceramics are fabricated by hot isostatic pressing for 2 h at 1250°C and 196 MPa. Microstructures and mechanical properties are examined, in connection with increasing Al₂O₃ content.     

Ion-beam processing of single crystal diamond using SOG mask

Various ion-beam etching characteristics of diamond and selectivity between diamond and spin-on-glass (SOG) were examined. The maximum selectivity of diamond and SOG was 12.7 in oxygen reactive ion-beam etching process at 100 V acceleration voltage. Using this etching condition and dot-shaped SOG mask, conical diamond field electron emitter arrays with 30 nm curvature radius, 2.58 μm base radius and 5.86 μm height were fabricated.     

Photocatalytic TiO2 films deposited by reactive magnetron sputtering with unipolar pulsing and plasma emission control systems

TiO₂ films with thickness of about 500 nm were deposited on unheated non-alkali glass substrates by reactive magnetron sputtering using one Ti metal target with unipolar pulsed powering of 50 kHz and the plasma emission feedback system (PCU). In order to keep the very high deposition rate, the depositions were carried out in the “transition region” between the metallic and the reactive (oxide) sputter mode where the target surface was metallic and oxidized, respectively. Stable deposition was successfully carried out in the whole “transition region” with PCU at total gas pressure of 3.0 Pa. All the as-deposited films deposited in the “transition region” showed amorphous structure, which performed very low photocatalytic activity. After the post-annealing in air at higher than 300 °C, all the films crystallized to anatase polycrystalline structure. They performed both photoinduced decomposition of acetaldehyde and photoinduced hydrophilicity under UV light illumination. The highest deposition rate in this study to deposit the photocatalytic TiO₂ films in the “transition region” was 90 nm/min, which was over twenty times higher than that for conventional sputter deposition processes.     

Intracellular recovery of gold by microbial reduction of AuCl4 ions using the anaerobic bacterium Shewanella algae

Microbial reduction and intracellular precipitation of gold was achieved at 25 °C and pH 7 by using the mesophilic anaerobic bacterium Shewanella algae with H₂ as the electron donor. The reductive precipitation of gold by S. algae was a fast process: 0.1–1 mol/m³ AuCl₄⁻ ions were completely reduced to insoluble gold within 30 min. The biogenic precipitates were crystalline gold nanoparticles of 10–20 nm present in the periplasmic space. The reducing power of S. algae at 3.2 × 10¹⁵ cells/m³ and 25 °C was comparable to that of aqueous citric acid solution (chemical reductant) at 20 mol/m³ and 50 °C. The intracellular recovery of gold is potentially attractive as an environmentally friendly alternative to conventional methods.     

On-line neuro-expert monitoring system for Borssele Nuclear Power Plant

A new method for an on-line monitoring system for the nuclear power plants has been developed utilizing the neural networks and the expert system. The integration of them is expected to enhance a substantial potential of the functionality as operators support.

The recurrent neural network and the feed-forward neural network with adaptive learning are selected for the plant modeling and anomaly detection because of the high capability of modeling for dynamic behavior. The expert system is used as a decision agent, which works on the information space of both the neural networks and the human operators. The information of other sensory signals is also fed to the expert system, together with the outputs that the neural networks generate from the measured plant signals. The expert system can treat almost all known correlation between plant status patterns and operation modes as a priori set of rules.

From the off-line test at Borssele Nuclear Power Plant (PWR 480 MWe) in the Netherlands, it was shown that the neuro-expert system successfully monitored the plant status. The expert system worked satisfactorily in diagnosing the system status by using the outputs of the neural networks and a priori knowledge base from the PWR simulator. The electric power coefficient is simultaneously monitored from the measured reactive and active electric power signals.     

Linear bipolar OTAs employing exponential‐law circuits

This paper presents design of linear bipolar OTAs, which are composed of two function blocks; one is an exponential‐law circuit and the other is a core cell. Multi‐tanh cells are employed as the core cell. This kind of OTA has lower power dissipation relatively to the conventional multi‐tanh cell. According as the order of the multi‐tanh core cell becomes higher, the number of circuit realization for the core cell increases. For example, we have two OTAs for the core circuit of an emitter‐coupled pair and four OTAs for the doublet core cell. Thus, we consider the generalized OTAs for an arbitrary order n of the core cell and obtain a formula to give the realization number of the linear OTAs for n. According to the formula, there must be eight OTAs in the case of n=3. All of the eight OTAs are examined. Analysis and simulation results show that the OTAs have advantage in their characteristics, such as linear input range, power dissipation, noise, and frequency response. Copyright 2004 John Wiley & Sons, Ltd.