Monte Carlo uncertainty quantification of the effective delayed neutron fraction

The applicability of Monte Carlo techniques, namely the Monte Carlo sensitivity method and the random-sampling method, for uncertainty quantification of the effective delayed neutron fraction β_eff is investigated using the continuous-energy Monte Carlo transport code, MCNP, from the perspective of statistical convergence issues. This study focuses on the nuclear data as one of the major sources of β_eff uncertainty. For validation of the calculated β_eff, a critical configuration of the VENUS-F zero-power reactor was used. It is demonstrated that Chiba's modified k-ratio method is superior to Bretscher's prompt k-ratio method in terms of reducing the statistical uncertainty in calculating not only β_eff but also its sensitivities and the uncertainty due to nuclear data. From this result and a comparison of uncertainties obtained by the Monte Carlo sensitivity method and the random-sampling method, it is shown that the Monte Carlo sensitivity method using Chiba's modified k-ratio method is the most practical for uncertainty quantification of β_eff. Finally, total β_eff uncertainty due to nuclear data for the VENUS-F critical configuration is determined to be approximately 2.7% with JENDL-4.0u, which is dominated by the delayed neutron yield of ²³⁵U.     

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.     

Control of the coating layer thickness of TiO2–SiO2 core–shell hybrid particles by liquid phase deposition

This paper describes control of the coating layer thickness and the crystallite size of the core–shell hybrid particles by controlling the process parameter. The core–shell hybrid particles were prepared using liquid phase deposition (LPD). We confirmed that the homogeneous coating was attained from the result of the zeta potential and the transmission electron microscope (TEM) observation. Furthermore, the coating layer microstructure was estimated using Brunauer–Emmett–Teller (BET) method. The obtained coating layer of titania was estimated using the band gap energy. Results indicate that the blue shift of the band gap energy signifies that the physical property of the hybrid particles was controlled by the coating layer thickness and the crystallite size, which are determined by the processing parameters.     

Gamma-Ray Spectrometer based on a Transition Edge Sensor for Nuclear Materials Analysis

We designed and fabricated a hard X-ray and gamma-ray TES spectrometer for nuclear materials analysis. The superconducting tin absorber is coupled to an Ir/Au TES by using a gold post to improve the thermal contact between the absorber and the TES. The reported energy resolution is 156 eV FWHM at 59.5 keV and 166 eV FWHM at 122 keV gamma-rays. We performed measurement of a Pu sample and clearly separated the \(^{239}\) Pu (56.828 keV) and the \(^{241}\) Am (59.5 keV) peaks by this TES microcalorimeter which cannot be resolved by the HPGe detector.     

快速烧结制备纳米Y-TZP材料

研究了快速热压烧结和放电等离子快速烧结（ＳＰＳ）制备纳米Ｙ－ＴＺＰ材料．利用快速热压烧结和 ＳＰＳ快速烧结,可在烧结温度为 １２００℃、保温９～１０ｍｉｎ条件下,制得相对密度超过９９％的 Ｙ－ＴＺＰ材料．研究发现：虽然快速热压烧结和 ＳＰＳ烧结都可使Ｙ－ＴＺＰ在相同温度下的密度高于普通热压烧结,但两种快速烧结所得Ｙ－ＴＺＰ的晶粒都大于无压烧结所得;另外,快速热压烧结所得样品的结构不够均匀,而ＳＰＳ烧结的样品的均匀性较好．文章对产生这些现象的原因进行了理论探讨．     

Selective Patterning of Gold Surfaces by Core/Shell,Semisoft Hybrid Nanoparticles

The generation of patterned surfaces with well‐defined nano‐ and microdomains is demonstrated by attaching core/shell, semisoft nanoparticles with narrow size distribution to microdomains of a gold‐coated silicon wafer. Near monodisperse nanoparticles are prepared using reversible addition‐fragmentation chain transfer (RAFT) polymerization, initiated from a silica surface, to prepare a polystyrene shell around a silica core. The particles are then used as‐prepared, or after aminolysis of the terminal thiocarbonyl group of the polystyrene shell, to give thiol‐terminated nanoparticles. When gold‐coated silicon wafers are immersed into very dilute suspensions of these particles (as low as 0.004 wt%), both types of particles are shown to adhere to the gold domains. The thiolated particles adhere selectively to the gold microdomains, allowing for microdomain patterning, while particles that contain the trithiocarbonate functionality lead to a much more even coverage of the gold surface with fewer particle aggregations.     

Chemically Tuned p‐ and n‐Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics

Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post‐silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom‐thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p‐ and n‐type semiconductors is essential for various device applications, such as complementary metal‐oxide‐semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe₂ is demonstrated by chemical doping. Two different molecules, 4‐nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe₂ field‐effect transistors (FETs) to p‐ and n‐type, respectively. Moreover, the chemically doped WSe₂ show increased effective carrier mobilities of 82 and 25 cm² V^?1s^?1 for holes and electrons, respectively, which are much higher than those of the pristine WSe₂. The doping effects are studied by photoluminescence, Raman, X‐ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe₂ FETs are integrated into CMOS inverters, exhibiting extremely low power consumption ( ≈ 0.17 nW). Furthermore, a p‐n junction within single WSe₂ grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe₂ will contribute to the development of TMDC‐based advanced electronics.     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures     

Mechanism for change in leakage current waveform on a wet silicone rubber surface-a study using a dynamic 3-D model

This paper describes the results of experiments and simulations made to examine the waveform of leakage current flowing through the surface of HTV (high temperature vulcanized) silicone rubber specimen exposed to clean fog. Water droplets were placed on the surface of specimen energized with AC voltage and investigations of the surface state were done by a high-speed video camera in a wet condition produced by sprayed clean fog. Simultaneously, according to the experimental condition, a dynamic 3-D model was built to calculate the electric field and current density distribution on the specimen surface by a finite element software. A conducting water layer is formed due to the deformation of droplets and the development of dry band arcing. This caused large distortion and nonlinearly which increased the odd harmonic components in the leakage current waveform. This is in good agreement with the simulating calculation. The information from the leakage current frequency characteristic was extracted and correlated with the insulation surface condition. It can be considered as a diagnostic index for electrical characteristics and insulation state of polymer insulators in the wet condition.     

Catalytic effect of bis (cyclopentadienyl) nickel II on the improvement of the hydrogenation-dehydrogenation of Mg-MgH2 system

Bis(cyclopentadienyl) nickel II is one of the best precursors of nickel catalyst which remarkably improved the hydrogen absorption-desorption of Mg–MgH₂ system. The X-ray photoelectron spectroscopy (XPS) and Furrier Transformed Infrared Spectroscopy (FTIR) analyses revealed that bis (cyclopentadienyl) nickel II decomposed into metallic nickel during ball milling with MgH₂. The nickel thus formed has homogeneously doped over the Mg - MgH₂ surface. The Ni-doped Mg-MgH₂ have shown the excellent catalytic effect on hydrogen absorption-desorption. The catalyzed MgH₂ could desorb hydrogen below 225 °C (T_onset) under Ar flow, and absorb hydrogen at 50 °C under 1.5 MPa H₂ pressure. The hydrogen absorption-desorption temperatures are remarkably decreased as compared to the uncatalyzed Mg-MgH₂ system under the identical experimental conditions.