Inventive Tool Use to Comprehend Big Code

Software developers often need to understand a large body of unfamiliar code with little or no documentation, no experts to consult, and little time to do it. A post appeared in January 2008 on Slashdot, a technology news Web site, asking for tools and techniques that could help. This article analyzes 301 often passionate and sometimes articulate responses to this query, including the themes and the associated tool recommendations. The most common suggestions were to use a code navigation tool, use a design recovery tool, use a debugger to step through the code, create a runtime trace, use problem-based learning, ask people for help, study the code from top down, and print out all the code. This analysis presents an intriguing snapshot of how software developers in industry go about comprehending big code.     

Performance of the MAP/G/1 Queue Under the Dyadic Control of Workload and Server Idleness

This paper studies the steady-state queue length process of the MAP/G/1 queue under the dyadic control of the D-policy and multiple server vacations. We derive the probability generating function of the queue length and the mean queue length. We then present computational experiences and compare the MAP queue with the Poisson queue.

A study of roll‐printing technology for TFT‐LCD fabrication

Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used.     

12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors

Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm²/V‐sec, threshold voltage of 1.1 V, on/off ratio >10⁹, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

Thin‐film barriers using transparent conducting oxides for organic light‐emitting diodes

Abstract— This study covers thin‐film barriers using inorganic barriers of transparent conducting oxides (TCOs) such as zinc oxide (ZnO) and indium tin oxide (ITO). The TCOs were fabricated using a sputtering method with a process gas of pure argon at room temperature. ITO showed better properties as a barrier than the ZnO and exhibited the electronic performance necessary to perform additional functions. The ITO has superior barrier performance because it has a lower crack density due to its partial amorphous phase. For organic/inorganic multilayer barriers, the organic underlayer decreased the water‐vapor transmission rate (WVTR) more than the organic upper layer, indicating that the planarization effect was important in reducing the WVTRs. The results of this organic/ITO multilayer barrier study are expected to be useful in finding a practical solution to OLED encapsulation.     

A -based layout design for gratings allocation

In the design process of gratings, the grating layout design is the most important activity influencing manufacturing cost. In the grating layout design, the key to saving manufacturing cost is to find a design with a minimal number of cutting operations. This paper presents an application of the A^* algorithm in grating layout design. The design problem is represented as the space search problem of design alternatives. A^* explores the feasible alternatives within the space, until an optimal solution is obtained.     

Effects of morphologies of (Cd+Te) powders on the properties of sintered CdS/CdTe solar cells

Polycrystalline CdS/CdTe solar cells have been prepared by coating and sintering a CdS slurry and a (Cd+Te) slurry. CdS layers were first formed on borosilicate glass substrates at 600°C in nitrogen and then CdTe layers were formed on the sintered CdS layers at 625°C in nitrogen. The (Cd+Te) slurry contained (Cd+Te) powders mixed in a ball mill for 12–220 h instead of more expensive CdTe powders. The shape of cadmium particles changed from spherical to plate-like and the diameter of the plate-shaped particles became smaller as the ball-milling time increased. In addition, a compound CdTe started to form during a long milling time. The sintered CdTe layers were more compact as the diameter of plate-shaped cadmium particles decreased. However, cracks developed in the sintered CdTe layer when the diameter was small ( 2 m). The efficiency of sintered CdS/CdTe solar cells increased with decreasing particle diameter and then decreased with further decrease in particle diameter. The highest efficiency of 12.1% was achieved using a mixture of (Cd+Te) powders which had plate-shaped cadmium particles with a diameter of 5 m. The results suggest that high-efficiency sintered CdS/CdTe solar cells can be fabricated by using CdTe slurry from the mixture of (Cd+Te) powders with an inexpensive ball-milling process.     

Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl₅ as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta₂O₅ film were investigated for Al/Ta₂O₅/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta₂O₅ deposited by PECVD was amorphous as-deposited. However, crystalline -Ta₂O₅ of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta₂O₅ were found to be 2.54 fF m^–2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.     

Two-dimensional Kerr-Fourier imaging of translucent phantoms in thick turbid media

Translucent scattering phantoms hidden inside a 5.5-cm-thick Intralipid solution were imaged as a function of phantom scattering coefficients by the use of a picosecond time- and space-gated Kerr-Fourier imaging system. A 2-mm-thick translucent phantom with a 0.1% concentration (scattering coefficient) difference from the 55-mm-thick surrounding scattering host can be distinguished at a signal level of ~10(-10) of the incidence illumination intensity.