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排序方式: 共有746条查询结果,搜索用时 15 毫秒
71.
S.W. Chang T.-M. Liou K.F. Chiang G.F. Hong 《International Journal of Heat and Mass Transfer》2008,51(3-4):457-468
A novel heat transfer enhancement (HTE) roughness with V-shaped ribs and deepened scales is devised. Performances of heat transfer and pressure drop in a rectangular channel fitted with such HTE surfaces are experimentally examined for both forward and backward flows in the Re range of 1000–30000. Relative to the smooth-walled pipe flow conditions, HTE ratios for the present test channel with forward and backward flows, respectively, reach 9.5–13.6 and 9–12.3 for laminar flows and 6.8–6.3 and 5.7–4.3 for turbulent flows. Comparisons of heat transfer data, pressure-drop measurements and thermal performance factors with previous results collected from varieties of HTE devices demonstrate the superiorities of this compound HTE device. The decrease of HTE ratio as Re increases for turbulent flows, which is a common setback for several HTE elements, is almost diminished in the channel fitted with present compound HTE surfaces. Experimental correlations of heat transfer and friction coefficient for the tested channel with forward and backward flows are derived for design applications. 相似文献
72.
We have demonstrated a graded-index-rod external coupled-cavity (GRECC) laser with backface output through a partially transmitting external cavity mirror. Laser output is monitored from the backface in a transmitter module with double-loop feedback control which stabilizes output power and maintains single-frequency operation under CW and pseudorandom pulse modulation. 相似文献
73.
74.
J. J. Liou K. Lee S. M. Knapp K. B. Sundaram J. S. Yuan D. C. Malocha M. Belkerdid 《Solid-state electronics》1990,33(12):1629-1632
The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al---Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high. 相似文献
75.
Wu W.-C. Chao T.-S. Peng W.-C. Yang W.-L. Wang J.-C. Chen J.-H. Lai C.-S. Yang T.-Y. Lee C.-H. Hsieh T.-M. Liou J. C. 《Electron Device Letters, IEEE》2007,28(3):214-216
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application 相似文献
76.
A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model 相似文献
77.
刘重轩 《纺织高校基础科学学报》1997,10(1):42-45
箱式组合变电站箱内温的特点跟负载特性及箱壳的散热结构有关,而变电站内的电力变压器的负载率又跟箱内温升及箱壳的散热等级有关,本文给出了变压器负载率的计算公式和参考值。 相似文献
78.
Kou-Fu Liou Tsung-Yu Hsiao Chien-Hong Cheng 《Fullerenes, Nanotubes and Carbon Nanostructures》1998,6(2):351-359
Treatment of [60]fullerene with ethyl trans, trans-hexa-2,4-dienoate (1) and methyl trans, trans-octa-2,4-dienoate (2) at 70 ∼ 100 °C afforded products 3 and 4, respectively, which are resulted from Diels-Alder addition of the dienoates to a 6/6 ring junction of [60]fullerene. 相似文献
79.
Ohtsu M. Liou K.-Y. Burrows E.C. Burrus C.A. Eisenstein G. 《Electronics letters》1987,23(21):1111-1113
A problem in frequency-tuning of external-cavity lasers is mode-hopping between neighbouring external-cavity modes. We demonstrate a new interferometric method for monitoring mode-hoping and an automatic control circuit for a 1.3 ?m grating external-cavity laser that maintains single-mode operation when the lasing frequency is tuned. 相似文献
80.
稀土配合物Eu(TTA)3Phen掺杂的PMMA树脂的制备及其发光性能研究 总被引:4,自引:2,他引:4
用新的合成方法合成了稀土配合物Eu(TTA) 3Phen。研究了该配合物的IR、UV、TGA、元素分析和荧光光谱。该配合物具有良好的发光性能和热稳定性。采用加热方法将Eu(TTA) 3Phen掺入PMMA树脂中 ,制成发光塑料树脂 ,并测定其发光性能。结果表明 ,Eu(TTA) 3Phen掺入PMMA树脂后仍保持该稀土配合物原有的发光特性 ,制成的Eu(TTA) 3Phen -PMMA树脂复合材料具有良好的发光性能 ,其发光强度与Eu(TTA) 3Phen掺入的含量有关。 相似文献