秦山核电厂蒸汽发生器水位控制试验

简要介绍了蒸汽发生器水位控制系统的运行方式和试验方法。试验项目包括旁通阀控制试验、主给水阀控制试验和旁通阀与主给水阀的切换试验。文中给出了试验结果,即在液位扰动和核动率扰动时,蒸汽发生器液位的变化过程。经过两个月的运行和瞬态试验,证明蒸汽发生器水位控制系统满足设计要求。     

Flammability and thermal stability studies of ABS/Montmorillonite nanocomposite

Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry     

地下水污染修复的活性渗滤墙技术

活性渗滤墙是一种现场修复受污染地下水的新型技术，具有原理简单，施工方便，运行费用低廉等特点，活性渗滤墙垂直于地下水流动方向设置，当地下水流通过活性渗滤墙时，污染物与墙体材料发生化学反应，从而达到环境修复的目的。文中综述了活性渗滤墙技术的修复机理和实际应用，大量研究表明，应用金属铁作为活性渗滤墙材料，可以去除地下水中的重金属以及有机污染物，目前活性渗滤墙已经在世界各地应用，是一种非常有发展前景的环境污染修复技术。     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive Layers bombarded by H/sup +/ and Fe/sup +/ ions

This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H/sup +/ and Fe/sup +/ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 10/sup 8/ /spl Omega/sq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment.     

IDEO：在中国寻找另一个起点

IDEO以前在亚洲是以日本事务所为中心．现在转到上海来主要原因是什么？能介绍一下目前上海事务所的情况吗？