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921.
Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 1015-1019 cm-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×1019 cm-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon  相似文献   
922.
We report a 7.6-mW single-frequency fiber laser operating at 1545 nm, using for the first time an Er3+:Yb3+ doped fiber and a fiber grating output coupler. The laser did not exhibit self-pulsation, which is a typical problem in short three-level fiber lasers, and had a relative intensity noise (RIN) level below -145.5 dB/Hz at frequencies above 10 MHz. The linewidth of the laser was limited by the relaxation oscillation sidebands in the optical spectrum and was typically less than 1 MHz  相似文献   
923.
A new equation is derived for the rotational oscillations of a deep massive foundation flexibly restrained in the ground. An error in the corresponding equation published in the literature is indicated. Translated from Osnovaniya, Fundamenty i Mekhanika Gruntov, No. 6, pp. 7–8, November–December, 1996.  相似文献   
924.
The impact of crosstalk in an arrayed-waveguide N×N wavelength multiplexer is investigated precisely in relation to its application to wavelength-routing N×N all optical networks. In such systems multiple crosstalk light which has the same wavelength as the signal results in signal-crosstalk beat noise. We confirm that the noise is Gaussian and obtain the relation between crosstalk and power penalty. It is shown that the crosstalk must be less than -38 dB for a 16×16 system to keep the power penalty below 1 dB at a bit error rate of 10-9  相似文献   
925.
Cellulose diacetate and triacetate films 6–55 µm thick with a total porosity of 0.8–2% were prepared by pouring a solution on an immobile surface and by calendering. Sorption of H2S and CO2 gases and acetone vapors on these films was investigated in static and dynamic conditions. It was shown that films 6–10 µm thick prepared by calendering should be used for purification of air from H2S and CO2 and films 15–20 µm thick prepared by pouring should be used for removal of acetone vapors.Engels Institute of Technology, Saratov State University. Translated from Khimicheskie Volokna, No. 6, pp. 44–46, November–December, 1995.  相似文献   
926.
Variable rate speech coding is now recognized as an important system component for high-capacity cellular networks because it exploits speech statistics to reduce the average bit rate, which results in reduced interference and increased capacity. Once a variable rate capability is available, an additional capacity enhancement can be achieved by introducing network control of the user bit rate in response to changing traffic levels. We introduce the concept of network control of rate and propose a particular network-control method for code-division multiple access (CDMA) systems. Based on an M/M/∞//M queueing model applied to a cell under heavy traffic conditions and a new performance measure called averaged speech quality, we obtain simulation results to demonstrate how network control of rate can achieve improved speech quality or increased capacity for a given quality objective  相似文献   
927.
928.
A subpopulation of rabbit polyclonal anti-idiotypic antibody (anti-Id) was previously produced to a murine monoclonal antibody (mAb) (M1875) specific for the bluetongue virus core protein VP7. In this report, mimicry of VP7 by this anti-Id (designated RAb2-A) was functionally analyzed through immunization of Balb/c mice with RAb2-A or purified VP7. Animals immunized with RAb2-A were able to produce an M1875-like Ab3 antibody response with idiotype and epitope specificity resembling that of M1875 without subsequent exposure to the nominal antigen. This conclusion was supported by experiments showing that the RAb2-A-induced Ab3 antibodies (i) reacted specifically with the immunizing anti-Id; (ii) were capable of binding VP7; (iii) inhibited M1875 from binding to VP7; and (iv) inhibited M1875 from binding to RAb2-A. Similarly, mice immunized with purified VP7 also produced antibodies that exhibited characteristics such as idiotype and epitope specificity in common with M1875. No antibody response to VP7 was detected in control groups of mice immunized with either normal rabbit IgG or BHK-21 cell components. Therefore, it can be concluded that rabbit anti-Id RAb-2-A mimics an M1875-defined VP7 epitope sufficiently to function as a surrogate antigen for inducing an anti-bluetongue virus response.  相似文献   
929.
A computer model for polarization dependent gain (PDG) in Er-doped fiber amplifiers (EDFA) is presented. The model assumes that each erbium ion possesses an ellipsoidal gain surface and that all ion orientations are equally likely. By dividing the ions into subsets based upon orientation and computing the inversion of each subset in the presence of polarized pump and signal waves, the model predicts the dependence of the PDG induced by this polarization hole-burning (PHB) on the design of the EDFA, the signal degree and state of polarization (SOP), and the pump SOP. For moderate gain amplifiers (made from the same fiber) with the same gain peak wavelength and the same compression level, the magnitude of the PDG is nearly independent of the EDFA gain. Internal and random fiber birefringence are included to model real fibers. In fibers which cause the signal SOP to walk rapidly around the Poincare sphere, the PDG is reduced by a factor of 2/3 when compared with a linear polarization-maintained signal. Scrambled signals and partially-polarized saturating tones are also considered. Simple rules are derived for predicting the PDG of a given EDFA  相似文献   
930.
Modeling ion implantation of HgCdTe   总被引:2,自引:0,他引:2  
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.  相似文献   
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