X-Ray Study of the Effect of Heat on the Structural Parameters of Armos Fibres

In studying a series of fibre samples spun in steady-state conditions, the following was found: as a function of the conditions of processing Armos fibre, two structural modifications of the polymer can form; intensive crystallization of the modification corresponding to the 28.7° reflection begins in heat treatment above 220°C; above 320°C, intensive crystallization of the modification corresponding to the 14.25° reflection is observed; at 360°C, symbatic enhancement of the intensities of both reflections with a weak change in the other structural parameters of the fibre is observed.     

A printer model using signal processing techniques

An accurate printer model that is efficient enough to be used by halftoning algorithms is proposed. The proposed signal processing model (SPM) utilizes a physical model to train adaptive linear combiners (ALCs), after which the average exposure of each subpixel for any input pattern can be calculated using the optimized weight vector. The SPM can be used to model multi-level halftoning and resolution enhancement, as well as traditional halftoning. The SPM is comprised of a single ALC layer followed by a peak-to-average ratio (PAR) correction layer, which serves to produce a PAR of less than 1.5 in the modeled exposure. The PCN (PAR correction network) employs one ALC/pixel and exploits the physics governing the characteristics of exposure in small regions. A relatively small number of training patterns suffices to train the SPM.     

Development of a Continuous Segmented Flow Tubular Reactor and the “Scale‐out” Concept – In Search of Perfect Powders

The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.     

Synthesis and Study of Alkaline-Earth Metal Uranoborates,AI I(BUO5)2·nH2O

Previously unknown compounds A^{I I}(BUO₅)₂·nH₂O (A^{I I} = Mg, Ca, Sr, Ba; n = 0-7) were synthesized. Their structure and thermal decomposition were studied by X-ray diffraction, IR spectroscopy, and thermal analysis.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

A left-handed composite medium based on waveguiding structures with a bianisotropic filling

A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified.     

Estimating and reducing the memory requirements of signal processing codes for embedded systems

Most embedded systems have limited amount of memory. In contrast, the memory requirements of the digital signal processing (DSP) and video processing codes (in nested loops, in particular) running on embedded systems is significant. This paper addresses the problem of estimating and reducing the amount of memory needed for transfers of data in embedded systems. First, the problem of estimating the region associated with a statement or the set of elements referenced by a statement during the execution of nested loops is analyzed. For a fixed execution ordering, a quantitative analysis of the number of elements referenced is presented; exact expressions for uniformly generated references and a close upper and lower bound for nonuniformly generated references are derived. Second, in addition to presenting an algorithm that computes the total memory required, this paper also discusses the effect of transformations (that change the execution ordering) on the lifetimes of array variables, i.e., the time between the first and last accesses to a given array location. The term maximum window size is introduced, and quantitative expressions are derived to compute the maximum window size. A detailed analysis of the effect of unimodular transformations on data locality, including the calculation of the maximum window size, is presented.     

Computation of Running Averages

This brief presents and compares several recursive and nonrecursive techniques for the efficient computation of the running average of discrete signals. First of all, the standard recursive algorithm is considered and its long-term accuracy is assessed when the floating-point arithmetic is employed. A cheap refreshing strategy is proposed as a means of keeping the computed value close enough to the exact one. Then, two alternative nonrecursive algorithms, requiring only log₂N additions, are developed, which are as reliable and accurate as the direct implementation