Ph Effect on Thermal Transition Temperature of Collagen

Differential scanning calorimetry (DSC) was used to measure the thermal transition temperature of bovine intramuscular and tendon collagen. Equilibration of the collagen in buffers in the pH range 4.25–7.40 resulted in a decline in transition temperature with decreasing pH. This was more pronounced in collagen with higher concentrations of aldimine crosslinks. We proposed that postmortem pH decline was responsible for the thermal transition temperature decline observed by other workers. Therefore, thermal transition temperature measurements must be performed on collagen samples that have been thoroughly equilibrated to a common pH if they are to be used as indices of structural changes.     

Influence of dietary sodium bicarbonate on the potassium metabolism of growing dairy calves.

We evaluated the influence of supplemental dietary NaHCO3 on K metabolism of young dairy calves. Thirty-two Holstein and Jersey male and female calves were blocked at 56 to 70 d after birth according to breed, sex, and age and assigned randomly to a 2 x 2 factorial arrangement of dietary treatments for 8 wk: .4% K with 0% NaHCO3, .4% K with 2% NaHCO3, .6% K with 0% NaHCO3, and .6% K with 2% NaHCO3. Feed intake was not affected by dietary KCl or NaHCO3 supplementation, but average daily gain increased with increased K and tended to be reduced by dietary NaHCO3. Plasma K was elevated by increased dietary K but generally was unaffected by NaHCO3. Urinary Ca excretion appeared to be reduced by NaHCO3; urine pH increased with supplemental NaHCO3. Results indicate 1) the K requirement of the growing calf is between .40 and .55% of diet DM, 2) because urinary K excretion was elevated by dietary NaHCO3, the K requirement may be increased when the diet is supplemented with NaHCO3, and 3) average daily gain and plasma K are sensitive indicators of dietary K in the growing calf.     

45% efficient silicon photovoltaic cell under monochromatic light

Improvements in the performance of silicon photovoltaic cells for solar applications are adapted for nonsolar photovoltaic applications. Improved monochromatic light efficiencies above 45% are reported including efficiencies close to 40% for relatively long-wavelength (1.064 μm) light as produced by neodymium-doped yttrium-aluminum garnet (Nd:YAG) lasers     

Analytical investigation of factors influencing power systemstabilizers performance

Results of simulations, designed to illustrate the influence of power system stabilizers (PSS) on inter-area and local oscillations in interconnected power systems, are reported. It is shown that the PSS location and the voltage characteristics of the system loads are significant factors in the ability of a PSS to increase the damping of interarea oscillations. It is also shown that an interaction between modes in two distinct parts of a power system is possible, due to resonance, and that this might cause distortions in mode shape and participation factors     

Monolithically integrated four-channel receiver array using diffused InGaAs (JFET technology)

Four-channel receiver arrays have been fabricated by monolithically integrating diffused InGaAs JFET-based electronics with InGaAs pin photodiodes. Cascode and simple inverter transimpedance amplifier circuits have been produced, both of which use a micro-FET as a tunable feedback element to vary bandwidth between 20 and 800 MHz. A sensitivity of -28.2 dBm was achieved at 1.25 Gbit/s with crosstalk between adjacent channels of -50 dB (electrical).<>     

A device to measure the cross-sectional area of soft connectivetissues

A device has been designed and fabricated to measure the cross-sectional area of soft connective tissues ex vivo. It consists of two displacement transducers; one sensing tissue thickness and the other sensing width. Outputs are recorded (via an analog to digital interface) using a personal computer. Numerical integration of a thickness versus width plot computes cross-sectional area. This plot also provides a quality check of acquired data. This device has been successfully used in biomechanical studies of rabbit patellar tendons, rat medial collateral ligaments, and dissected specimens of human fascia.     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

Extending the power line LAN up to the neighborhood transformer

This article reports on the performance of audio, video, multimedia, and other high-data-rate in-home networking applications. The article starts by describing the problems encountered in power line communication channels in terms of frequency response and noise characteristics, and explains how in-home power line LANs can be extended to the neighborhood transformer. OFDM physical layers providing speeds of 45 Mb/s and 200 Mb/s as well as QoS and security are introduced. Finally, the results of large tests involving several thousands of nodes are described.     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.