河南省灵宝市董家埝银矿原生晕特征及地质意义

董家埝银矿是豫西小秦岭矿集区南成矿带目前发现的唯一大型矿床。为了矿床深部勘查工作的顺利进行,了解有用元素在垂向上的变化规律,选用原生晕地球化学方法,通过典型矿床剖面的原生晕特征研究,实现对深部矿体变化趋势的判断。经计算,确定As、Sb、Ag、Au、Cu、Pb、Zn、Co和Mo等9种元素可作为指示元素,其中As和Sb为前缘晕指示元素,Ag、Au、Cu、Pb和Zn为近矿晕指示元素,Co和Mo为尾晕指示元素。分带指数和浓集指数2种方法计算得出的元素在分带序列上的位置总体趋势一致。用分带指数法确定的主矿体自上而下的原生晕轴向分带序列为Co-Mo-Cu-Au-Sb-Zn-Pb-Ag-As,出现"反分带"现象。结合原生晕地球化学参数变化特征、矿体剥蚀程度研究和理想模型,预测M1-I主矿体向深部仍有较大的延伸。研究成果可以为区域同类型矿化地质体深部的趋势判断和决策提供参考。     

用于厚屏蔽小探测器的蒙特卡罗模拟减方差方法研究

反应堆屏蔽计算中经常出现厚屏蔽、小探测器问题，常规蒙特卡罗方法难以有效解决。基于自动重要抽样（AIS）方法，本文提出了小探测器自动重要抽样(SDAIS)方法，并针对小探测器问题，优化了AIS方法的虚粒子赌分裂算法。该方法在自主开发的蒙特卡罗屏蔽程序MCShield上进行了实现。使用NUREG/CR-6115 PWR基准题验证该方法的正确性和计算效率。结果表明，SDAIS方法可有效地解决厚屏蔽小探测器问题，相比AIS方法及传统的重要性方法，计算效率提升1~2个量级。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

碳脱氧在钢包顶渣改质中的应用

 为了进一步降低夹杂物缺陷并提高产品质量,基于碳脱氧进行了钢包顶渣改质的研究。冷轧产品的生产工艺为铁水预处理→转炉→RH精炼→连铸,为减少钢中夹杂物质量分数,需要进行钢包顶渣改质,同时降低钢包顶渣TFe质量分数。采用粒碳部分替代铝渣球的方法进行基于碳脱氧工艺的钢包顶渣改质,试验结果表明,顶渣改质效果良好,在顶渣TFe质量分数、中间包钢水游离氧明显降低的同时铸坯中Al₂O₃夹杂物得到优化;“30 kg粒渣+铝渣球”工艺降低生产成本5.16元/t(钢)。     

烟道流量计量标准装置

为了解决我国烟道流量计的量值溯源问题,中国计量科学研究院建立了烟道流量计量标准装置。装置使用可溯源至标准转盘的激光多普勒测速仪作为原级标准器,采用激光多普勒流速剖面扫描和超声流量计波动修正的方式测量标准流量,经校准的8声道超声流量计为工作级标准表,具备了908~104840m3/h的测量能力,扩展不确定度为0.62%(k=2),可对最大口径为1m的流量计进行校准。装置下游测试段包括圆形管段和矩形管段,能够开展烟道流量计测量性能的研究。     

“任务驱动”教学法在可编程控制器课程教学中的实践与分析

以可编程控制器课程为例,介绍"任务驱动"教学法在教学过程中的具体应用,并探讨了实施过程中存在的问题与解决方法。     

落葵浆果天然染料提取及对羊毛织物的染色性能

文章主要研究用水浸法提取落葵浆果天然染料及研究浸提液对羊毛织物的染色性能。以水为提取剂提取落葵浆果天然染料,探讨提取工艺中料液比、提取温度及时间等因素对落葵浆果天然染料提取效果的影响。研究结果表明,落葵浆果水浸提法优化工艺为:料液比1∶20、提取温度70℃、提取时间30 min。落葵浆果天然染料可以对羊毛织物进行染色,媒染染色与直接染色相比,染色深度深且会呈现不同的颜色。由于媒染剂的络合作用,媒染染色色牢度比直接染色普遍高1~2级。     

胡萝卜丁中维生素C在热风辅助射频干燥过程中降解的动力学模型

目的研究热风辅助射频(hot air-assisted radio frequency,HA-RF)干燥过程中维生素C随温度变化的降解动力学模型。方法在6.5 cm极板间距和60℃热风系统条件下进行HA-RF干燥,重点研究胡萝卜丁中维生素C在干燥过程中的降解动力学,包括脱氢抗坏血酸(dehydroascorbic acid,DHAA)和抗坏血酸(ascorbic acid,AA)。总维生素C含量采用2,4-硝基苯肼分光光度法测定,AA采用2,6-二氯吲哚酚滴定法测定。结果HA-RF干燥过程中维生素C的降解规律符合一级可逆模型,其降解活化能为40.54 kJ/mol。DHAA活化能为35.83 kJ/mol,表明DHAA的稳定性低于AA。结论本研究使用的干燥温度为62.5~77.5℃,较高的干燥温度下维生素C降解速率较高,较低处理温度下的降解过程具有更好的模型适应度(R2>0.98)。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.