Highly conductive buried n+ layers in lnp:fe created by MeV energy Si,S, and Si/S implantation for application to microwave devices

To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 10¹⁴ cm⁻². The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 10¹⁴ cm⁻² of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 10¹⁹ cm³. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n⁺ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.     

Reliability optimization of communication networks using simulated annealing

Two concepts of communication network reliability are considered. The first one, the ‘s-t’ reliability, is relevant for communication between a source station and a terminal station as in the case of a two way telephone communication. The second one, the overall reliability, is a measure of simultaneous connectedness among all stations in the network. An algorthm is presented which selects the optimal set of links that maximizes the overall reliability of the network subject to a cost restriction, given the allowable node-link incidences, the link costs and the link reliabilities. The algorithm employs a variaton of the simulated annealing approach coupled with a hierarchical strategy to achieve the gobal optimum. For complex networks, the present algorithm is advantageous over the traditional heuristic procedures. The solutions of two representative example network optimization problems are presented to illustrate the present algorithm. The potential utilization of parallel computing strategies in the present algorithm is also identified.     

Chrestenson函数序列的生成方法及其数学分析

本文提出了适于三种序号的Ｃｈｒｅｓｔｅｎｓｏｎ函数序列的复制方法，对其复制过程进行了数学分析，并指出当Ｃｈｒｅｓｔｅｎｓｏｎ函数退化为Ｗａｌｓｈ函数时，此方法即为复制理论中的平移复制方法。     

Spatially-multiplexed fibre-optic Bragg grating strain andtemperature sensor system based on interferometric wavelength-shiftdetection

A prototype fibre-optic system using interferometric wavelength-shift detection, capable of multiplexing up to 32 fibre-optic Bragg grating strain and temperature sensors with identical characteristics, has been demonstrated. This system is based on a spatially multiplexed scheme for use with fibre-based low-coherence interferometric sensors, reported previously. Four fibre-optic Bragg grating channels using the same fibre grating have been demonstrated for measuring quasi-static strain and temperature     

Transient scattering by conducting cylinders-TE case

Transient scattering (transverse electric case) by two-dimensional cylinders, both open and closed, is investigated using the marching-on-in-time technique. A simple averaging scheme is also presented to control the late-time oscillations. Numerical results are presented for certain representative geometries and compared with inverse Fourier transform techniques. Good agreement is noted in each case     

Triangular ray-tube analysis of dielectric lens antennas

A new method of analysis for the radiation characteristics of dielectric lens antennas with arbitrary inner and outer surfaces is presented. The analysis is based on representing the feed illumination by a contiguous set of ray tubes and including the effects of surface reflections and ray divergence. Radiation patterns and the antenna gain are then computed by evaluating the closed-form expressions developed for the Kirchhoff's integral of the aperture fields. The validity of the analysis method has been demonstrated by comparing the computations with measured results of two different spherical lenses and a shaped lens configurations. The analysis method presented takes into account some of the practical aspects associated with lens design such as surface zoning to reduce the mass and surface matching to minimize the reflection loss     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

Tensile, creep, and ABI tests on sn5%sb solder for mechanical property evaluation

Sn5%Sb is one of the materials considered for replacing lead containing alloys for soldering in electronic packaging. We evaluated the tensile properties of the bulk material at varied strain-rates and temperatures (to 473K) to determine the underlying deformation mechanisms. Stress exponents of about three and seven were observed at low and high stresses, respectively, and very low activation energies for creep (about 16.7 and 37.7 kJ/mole) were noted. A maximum ductility of about 350% was noted at ambient temperature. Creep tests performed in the same temperature regime also showed two distinct regions, albeit with slightly different exponents (three and five) and activation energy (about 54.4 kJ/mole). Ball indentation tests were performed on the shoulder portions of the creep samples (prior to creep tests) using a Stress-Strain Microprobe^@ (Advanced Technology Corporation) at varied indentation rates (strain-rates). The automated ball indentation (ABI) data were at relatively high strain-rates; however, they were in excellent agreement with creep data, while both these results deviated from the tensile test data. Work is planned to perform creep at high stresses at ambient and extend ABI tests to elevated temperatures.     

光斑尺寸对光热失调技术测量光学薄膜吸收的影响

样品表面加热光斑和探测光斑的大小对光热技术有着重要影响,光热失调技术是一种新的可用于研究光学薄膜的微弱吸收的方法,文章理论分析了加热光斑和探测光斑尺寸对光热失调技术的影响.研究表明,加热光斑大小不变时,加热光调制频率增大,样品表面温升降低,温度分布区域减小;调制频率不变时,加热光斑越小,表面温升越大,分布区域越小.调制频率不变时,探测光斑越小,信号幅值越大,分布区域越小,信号幅值与加热光功率的线性关系的斜率越大,探测光斑的大小对信号幅频关系影响较小.研究结果对光热失调技术测量光学薄膜吸收具有重要意义.     

Statistical analysis of subthreshold leakage current for VLSI circuits

We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributions of individual gate leakage currents are then combined to obtain the mean and variance of the leakage current for an entire circuit. We also present an approach to account for both the inter- and intra-die gate length variations to ensure that the circuit leakage PDF correctly models both types of variation. The proposed methods were implemented and tested on a number of benchmark circuits. Comparison to Monte Carlo simulation validates the accuracy of the proposed method and demonstrates the efficiency of the proposed analysis method. Comparison with traditional deterministic leakage current analysis demonstrates the need for statistical methods for leakage current analysis.